JPS61140115A - High-frequency circuit device - Google Patents

High-frequency circuit device

Info

Publication number
JPS61140115A
JPS61140115A JP59262002A JP26200284A JPS61140115A JP S61140115 A JPS61140115 A JP S61140115A JP 59262002 A JP59262002 A JP 59262002A JP 26200284 A JP26200284 A JP 26200284A JP S61140115 A JPS61140115 A JP S61140115A
Authority
JP
Japan
Prior art keywords
inductance
curve
powder
circuit device
ferrimagnetic material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59262002A
Other languages
Japanese (ja)
Inventor
Yukio Kabetani
壁谷 幸男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP59262002A priority Critical patent/JPS61140115A/en
Publication of JPS61140115A publication Critical patent/JPS61140115A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00Fixed inductances of the signal type 
    • H01F17/0006Printed inductances

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

PURPOSE:To avoid particular expansion of the substrate area by covering the belt-like metal film forming inductance with the powder of a ferrimagnetic material, thereby obtaining an increase in inductance. CONSTITUTION:An inductance conductor 2 formed on a ceramic substrate 1 by detouring a belt-like metal film in a shape of wave is covered with a coated material 4 formed of a volatile solvent into which the powder of a ferrimagnetic material was mixed. A curve 11 shows the characteristic of a prior art example, and a curve 12 shows that of the present invention. In the curve 12, reactance Zi is large due to the increase in inductance, and it is positioned above the curve 11. However, the curve 12 approaches the curve 11 as the frequency becomes higher, and it becomes saturated. This is caused by the frequency characteristic of the permeability mu of the ferrimagnetic material, but the reaction in the frequency band to be used can increased by the powder of the ferrimagnetic material applied on and in the proximity of the inductance conductor.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、セラミック基板上に、抵抗、コンデンサ、イ
ンダクタンスなどの受動部品、およびトランジスタ、ダ
イオードなどの能動素子を形成、または搭載した混成集
積回路によって構成された高周波回路装置に関する。
[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a hybrid integrated circuit in which passive components such as resistors, capacitors, and inductances, and active elements such as transistors and diodes are formed or mounted on a ceramic substrate. The present invention relates to a high frequency circuit device configured by.

〔従来の技術〕[Conventional technology]

従来、セラミック、基板上に薄膜または厚膜抵抗を形成
すると共に1金属を帯状に蒸着してインダクタンスを形
成し、さらに、前記基板にトランジスタやダイオードな
どの半導体能動素子およびチップコンデンサなどを搭載
してなる混成集積回路による高周波回路装置が数多く実
用化されつつある。
Conventionally, a thin film or thick film resistor is formed on a ceramic substrate, a metal is vapor deposited in a band shape to form an inductance, and semiconductor active elements such as transistors and diodes, chip capacitors, etc. are mounted on the substrate. Many high-frequency circuit devices using hybrid integrated circuits are being put into practical use.

第3図はこれらの高周波回路装置におけるインダクタン
ス部分を示す平面図であり、同図(a)は波形に迂回さ
せて引廻した帯状の金属膜2による波状のインダクタン
ス、゛同図(b)は四角の過巻状に形成した帯状金属膜
3のインダクタンスを示し、インダクタンスを大きくし
ようとすれば、そのための占有面積が大きくならざるを
得ない。なお、6はチップコンデンサである。
FIG. 3 is a plan view showing the inductance part in these high-frequency circuit devices. FIG. The figure shows the inductance of the band-shaped metal film 3 formed in a rectangular overwound shape, and if the inductance is to be increased, the occupied area must be increased. Note that 6 is a chip capacitor.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上述のとおり、限られた基板面積内でのインダクタンス
の形成では、基板上に形成される帯状金属膜の幅および
長さに限界があり、十分なインダクタンスを得ようとす
れば、セラミック基板の面積を拡げなけれはならず、基
板面積の増大は、特性上の問題はかりでなく、価格上昇
にもつながるので、当然回避すべき性質のものである。
As mentioned above, in order to form inductance within a limited substrate area, there are limits to the width and length of the strip metal film formed on the substrate, and in order to obtain sufficient inductance, the area of the ceramic substrate An increase in the substrate area not only causes problems in terms of characteristics but also leads to an increase in price, so it is of a nature that should naturally be avoided.

〔問題点を解決するだめの手段〕[Failure to solve the problem]

上記問題点に対し、本発明では、インダクタンスを形成
する帯状の金属膜の上をフェリ磁性体の粉末で被うこと
により、インダクタンスの増大を得、よって、基板面積
を殊更に拡げることから免れている。
In order to solve the above-mentioned problem, in the present invention, the inductance is increased by covering the strip-shaped metal film forming the inductance with ferrimagnetic powder, thereby avoiding the need to further increase the substrate area. There is.

〔実施例〕〔Example〕

つぎに本発明を実施例により説明する。 Next, the present invention will be explained by examples.

第1図(a)は本発明の一実施例に係るインダクタンス
部分の平面図、同図(b)は同図(a)のA−A断面図
である。第1図(a) 、 (b)において、所望のイ
ンダクタンス値を得るために、セラミック基板1の上に
、帯状の金属膜を波状に迂回させて形成したインダクタ
ンス導体2は、フェリ磁性体の粉末を混入した気発性溶
剤の塗布により形成した被援物4で被われている。
FIG. 1(a) is a plan view of an inductance portion according to an embodiment of the present invention, and FIG. 1(b) is a sectional view taken along line AA in FIG. 1(a). In FIGS. 1(a) and 1(b), in order to obtain a desired inductance value, the inductance conductor 2 is formed by waving a band-shaped metal film around the ceramic substrate 1, and is made of ferrimagnetic powder. It is covered with a covering material 4 formed by coating an evaporative solvent mixed with.

第2図(a)は渦巻状インダクタンスにおける本発明の
実施例の平面図、同図(b)は同図(a)のA−A断面
図である。第2図(a) 、 (b)においては、セラ
ミック基板lの上に、四角い渦巻状に、帯状の金属膜に
よるインダクタンス導体3が形成され、導体3は、第1
図の例と同様の、フェリ磁性体の粉末からなる被扱物4
により被われている。
FIG. 2(a) is a plan view of an embodiment of the present invention in a spiral inductance, and FIG. 2(b) is a sectional view taken along the line AA in FIG. 2(a). In FIGS. 2(a) and 2(b), an inductance conductor 3 made of a band-shaped metal film is formed in a rectangular spiral shape on a ceramic substrate l, and the conductor 3
Workpiece 4 made of ferrimagnetic powder, similar to the example shown in the figure.
covered by.

〔発明の効果〕〔Effect of the invention〕

第4図は本発明の一実施例に係るインダクタンスのZi
−f特性の一例を示すグラフである。曲線11は従来例
、曲線12は本発明の特性であり、曲線12では、イン
ダクタンスの増加によりリャクタンスZiも大きく、曲
線11の上に出ている。
FIG. 4 shows the inductance Zi according to an embodiment of the present invention.
It is a graph showing an example of -f characteristics. Curve 11 is the characteristic of the conventional example, and curve 12 is the characteristic of the present invention. In curve 12, the reactance Zi is also large due to the increase in inductance, and is above the curve 11.

しかし、周波数が高くなると、曲線12は曲線11に近
付き飽和するようKなる。これは、フェリ磁性体の透磁
率μの周波数特性に起因している。しかし、本発明によ
って、インダクタンス導体の上および近傍に塗布したフ
ェリ磁性体の粉末により使用周波数帯におけるリャクタ
ンスを増加させることができる。よつ・て、便用セラミ
ック基板上のインダクタンスによシ占める面atヲ小さ
くでき、混成集積回路構成による高周波回路装置の小形
化および高集積化が実現できる。また、立体のフェライ
トコア使用に比べた場合は、製造工数が少く、かつ粉末
を塗布するだけであるから高さを低くできる効果もある
However, as the frequency increases, the curve 12 approaches the curve 11 and becomes saturated. This is due to the frequency characteristics of the magnetic permeability μ of the ferrimagnetic material. However, according to the present invention, the reactance in the used frequency band can be increased by applying ferrimagnetic powder on and near the inductance conductor. As a result, the area occupied by the inductance on the toilet ceramic substrate can be reduced, and the high frequency circuit device can be made smaller and more highly integrated due to the hybrid integrated circuit configuration. Furthermore, compared to using a three-dimensional ferrite core, the number of manufacturing steps is small and the height can be reduced because only powder is applied.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図(a)は本発明の一実施例に係るインダクタンス
部分の平面図、同図(b)は同図+2)OA−A断面図
、第2図(alは本発明の他の実施例に係るインダクタ
ンス部分の平面図、同図(b)は同図(alのA−A断
面図、第3図ta)および(b)はそれぞれ従来の高周
波回路装置のインダクタンス部分の一例および他の一例
の平面図、第4図は本発明および従来例に係るインダク
タンスのZi−f特性を示すグラフである。 1・・・・・・セラミック基板、2,3・・・・・・イ
ンダクタンス導体、4・・・・・・フェリ磁性体被覆、
6・・・・・・チップコンデンサ。 躬1図        第Z図 (bン 第3図 ± 第4図
FIG. 1(a) is a plan view of an inductance portion according to an embodiment of the present invention, FIG. FIG. 3(b) is a plan view of the inductance portion of the conventional high-frequency circuit device, and FIG. 4 is a graph showing the Zi-f characteristics of inductance according to the present invention and the conventional example. 1... Ceramic substrate, 2, 3... Inductance conductor, 4 ......ferrimagnetic coating,
6... Chip capacitor. Figure 1 Figure Z (Figure 3± Figure 4)

Claims (1)

【特許請求の範囲】[Claims]  薄膜抵抗または厚膜抵抗、半導体部品及びチップコン
デンサ等の回路部品をセラミックの平面基板上に形成ま
たは搭載した混成集積回路装置からなる高周波回路装置
において、前記セラミック基板上に金属を蒸着して形成
したインダクタンス上の一部または全体をフェリ磁性体
の粉末で被ったことを特徴とする高周波回路装置。
In a high-frequency circuit device consisting of a hybrid integrated circuit device in which circuit components such as thin film resistors, thick film resistors, semiconductor components, and chip capacitors are formed or mounted on a ceramic flat substrate, the circuit components are formed by vapor-depositing metal on the ceramic substrate. A high frequency circuit device characterized in that an inductance is partially or entirely covered with ferrimagnetic powder.
JP59262002A 1984-12-12 1984-12-12 High-frequency circuit device Pending JPS61140115A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59262002A JPS61140115A (en) 1984-12-12 1984-12-12 High-frequency circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59262002A JPS61140115A (en) 1984-12-12 1984-12-12 High-frequency circuit device

Publications (1)

Publication Number Publication Date
JPS61140115A true JPS61140115A (en) 1986-06-27

Family

ID=17369643

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59262002A Pending JPS61140115A (en) 1984-12-12 1984-12-12 High-frequency circuit device

Country Status (1)

Country Link
JP (1) JPS61140115A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6480096A (en) * 1987-09-19 1989-03-24 Nippon Cmk Kk Formation of condenser or like on printed wiring board
EP0701262A1 (en) * 1994-09-12 1996-03-13 Matsushita Electric Industrial Co., Ltd. Inductor and method for producing the same
US5647966A (en) * 1994-10-04 1997-07-15 Matsushita Electric Industrial Co., Ltd. Method for producing a conductive pattern and method for producing a greensheet lamination body including the same
US6909350B2 (en) 1994-09-12 2005-06-21 Matsushita Electric Industrial Co., Ltd. Inductor and method for producing the same
JPWO2020189478A1 (en) * 2019-03-19 2020-09-24

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6480096A (en) * 1987-09-19 1989-03-24 Nippon Cmk Kk Formation of condenser or like on printed wiring board
US6631545B1 (en) 1994-09-12 2003-10-14 Matsushita Electric Industrial Co., Ltd. Method for producing a lamination ceramic chi
US6293001B1 (en) 1994-09-12 2001-09-25 Matsushita Electric Industrial Co., Ltd. Method for producing an inductor
EP1148521A1 (en) * 1994-09-12 2001-10-24 Matsushita Electric Industrial Co., Ltd. Inductor and method for producing the same
EP1152439A1 (en) * 1994-09-12 2001-11-07 Matsushita Electric Industrial Co., Ltd. Inductor and method for producing the same
EP0701262A1 (en) * 1994-09-12 1996-03-13 Matsushita Electric Industrial Co., Ltd. Inductor and method for producing the same
US6909350B2 (en) 1994-09-12 2005-06-21 Matsushita Electric Industrial Co., Ltd. Inductor and method for producing the same
US6911888B2 (en) 1994-09-12 2005-06-28 Matsushita Electric Industrial Co., Ltd. Inductor and method for producing the same
US6911887B1 (en) 1994-09-12 2005-06-28 Matsushita Electric Industrial Co., Ltd. Inductor and method for producing the same
US6914510B2 (en) 1994-09-12 2005-07-05 Matsushita Electric Industrial Co., Ltd. Inductor and method for producing the same
US7078999B2 (en) 1994-09-12 2006-07-18 Matsushita Electric Industrial Co., Ltd. Inductor and method for producing the same
US5647966A (en) * 1994-10-04 1997-07-15 Matsushita Electric Industrial Co., Ltd. Method for producing a conductive pattern and method for producing a greensheet lamination body including the same
JPWO2020189478A1 (en) * 2019-03-19 2020-09-24

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