JPS6113637A - 化合物半導体装置 - Google Patents

化合物半導体装置

Info

Publication number
JPS6113637A
JPS6113637A JP59134788A JP13478884A JPS6113637A JP S6113637 A JPS6113637 A JP S6113637A JP 59134788 A JP59134788 A JP 59134788A JP 13478884 A JP13478884 A JP 13478884A JP S6113637 A JPS6113637 A JP S6113637A
Authority
JP
Japan
Prior art keywords
electrodes
compound semiconductor
elements
resin
lead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59134788A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0342497B2 (enExample
Inventor
Makoto Fujita
誠 藤田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP59134788A priority Critical patent/JPS6113637A/ja
Publication of JPS6113637A publication Critical patent/JPS6113637A/ja
Publication of JPH0342497B2 publication Critical patent/JPH0342497B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W72/30
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117Shapes of semiconductor bodies
    • H10W70/682
    • H10W70/685
    • H10W72/073
    • H10W72/07337
    • H10W72/075
    • H10W72/07551
    • H10W72/50
    • H10W72/536
    • H10W72/5363
    • H10W72/59
    • H10W72/884
    • H10W72/934
    • H10W90/753
    • H10W90/754

Landscapes

  • Wire Bonding (AREA)
  • Hall/Mr Elements (AREA)
JP59134788A 1984-06-28 1984-06-28 化合物半導体装置 Granted JPS6113637A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59134788A JPS6113637A (ja) 1984-06-28 1984-06-28 化合物半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59134788A JPS6113637A (ja) 1984-06-28 1984-06-28 化合物半導体装置

Publications (2)

Publication Number Publication Date
JPS6113637A true JPS6113637A (ja) 1986-01-21
JPH0342497B2 JPH0342497B2 (enExample) 1991-06-27

Family

ID=15136559

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59134788A Granted JPS6113637A (ja) 1984-06-28 1984-06-28 化合物半導体装置

Country Status (1)

Country Link
JP (1) JPS6113637A (enExample)

Also Published As

Publication number Publication date
JPH0342497B2 (enExample) 1991-06-27

Similar Documents

Publication Publication Date Title
US6356068B1 (en) Current monitor system and a method for manufacturing it
CN111089995B (zh) 绝缘电流传感器
EP2783229B1 (en) Magnetic field sensor device having non-conductive die paddle and production method
JPH02265264A (ja) Icカード用モジュール
US12013419B2 (en) Integrated current sensor with magnetic flux concentrators
CN106104290B (zh) 高灵敏磁传感器及其制作方法
JPH0814617B2 (ja) 磁気センサの製造方法
JPS6113637A (ja) 化合物半導体装置
WO1991011729A1 (fr) Capteur de magnetoresistance
JP2849100B2 (ja) 磁電変換素子およびその製造方法
US3943481A (en) Galvano-magnetic effect device
JPH0320786Y2 (enExample)
JPH0471353B2 (enExample)
JPH11233849A (ja) 磁電変換素子およびその製造方法
JPH11330584A (ja) 磁電変換素子およびそれを用いた磁気センサ、磁電変換素子の製造方法
JP2715016B2 (ja) ホール素子およびホール素子の製造方法
JPS63182877A (ja) ホ−ル素子
JPH11330586A (ja) 磁電変換素子およびそれを用いた磁気センサ、磁電変換素子の製造方法
CN113574403B (zh) 磁场传感器
RU2054757C1 (ru) Гальваномагнитный преобразователь
JPH02307068A (ja) 磁気センサ
JPS584991A (ja) 半導体装置
JPH0462474B2 (enExample)
JPS63299285A (ja) ホ−ル素子
JP2002026425A (ja) 磁電変換素子およびそれを用いた磁器センサおよび磁電変換素子の製造方法