JPS6113625A - プラズマ処理装置 - Google Patents

プラズマ処理装置

Info

Publication number
JPS6113625A
JPS6113625A JP13311784A JP13311784A JPS6113625A JP S6113625 A JPS6113625 A JP S6113625A JP 13311784 A JP13311784 A JP 13311784A JP 13311784 A JP13311784 A JP 13311784A JP S6113625 A JPS6113625 A JP S6113625A
Authority
JP
Japan
Prior art keywords
plasma
processing apparatus
modulation
plasma processing
discharge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13311784A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0469415B2 (enrdf_load_stackoverflow
Inventor
Toru Otsubo
徹 大坪
Susumu Aiuchi
進 相内
Takashi Kamimura
隆 上村
Minoru Noguchi
稔 野口
Teru Fujii
藤井　輝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13311784A priority Critical patent/JPS6113625A/ja
Priority to KR1019840006435A priority patent/KR890004881B1/ko
Priority to DE8484112571T priority patent/DE3482076D1/de
Priority to US06/662,014 priority patent/US4808258A/en
Priority to EP84112571A priority patent/EP0140294B1/en
Publication of JPS6113625A publication Critical patent/JPS6113625A/ja
Publication of JPH0469415B2 publication Critical patent/JPH0469415B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP13311784A 1983-10-19 1984-06-29 プラズマ処理装置 Granted JPS6113625A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP13311784A JPS6113625A (ja) 1984-06-29 1984-06-29 プラズマ処理装置
KR1019840006435A KR890004881B1 (ko) 1983-10-19 1984-10-17 플라즈마 처리 방법 및 그 장치
DE8484112571T DE3482076D1 (de) 1983-10-19 1984-10-18 Plasmabearbeitungsverfahren und geraet zur anwendung dieses verfahrens.
US06/662,014 US4808258A (en) 1983-10-19 1984-10-18 Plasma processing method and apparatus for carrying out the same
EP84112571A EP0140294B1 (en) 1983-10-19 1984-10-18 Plasma processing method and apparatus for carrying out the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13311784A JPS6113625A (ja) 1984-06-29 1984-06-29 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JPS6113625A true JPS6113625A (ja) 1986-01-21
JPH0469415B2 JPH0469415B2 (enrdf_load_stackoverflow) 1992-11-06

Family

ID=15097188

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13311784A Granted JPS6113625A (ja) 1983-10-19 1984-06-29 プラズマ処理装置

Country Status (1)

Country Link
JP (1) JPS6113625A (enrdf_load_stackoverflow)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63288021A (ja) * 1986-10-17 1988-11-25 Hitachi Ltd プラズマ処理方法
JPS63311726A (ja) * 1987-06-15 1988-12-20 Ulvac Corp マイクロ波プラズマ処理装置
US4795529A (en) * 1986-10-17 1989-01-03 Hitachi, Ltd. Plasma treating method and apparatus therefor
JPH02503614A (ja) * 1987-06-01 1990-10-25 コミッサレ・ア・レナジイ・アトミック ガスプラズマによる食刻方法
JPH03218627A (ja) * 1989-02-15 1991-09-26 Hitachi Ltd プラズマエッチング方法及び装置
JPH06342769A (ja) * 1992-08-21 1994-12-13 Nissin Electric Co Ltd エッチング方法及び装置
JPH08181125A (ja) * 1994-10-27 1996-07-12 Nec Corp プラズマ処理方法及びその装置
JPH09139364A (ja) * 1995-11-14 1997-05-27 Nec Corp 中性粒子ビーム処理装置
US6372654B1 (en) 1999-04-07 2002-04-16 Nec Corporation Apparatus for fabricating a semiconductor device and method of doing the same
US7112533B2 (en) 2000-08-31 2006-09-26 Micron Technology, Inc. Plasma etching system and method
US7611993B2 (en) 2002-04-26 2009-11-03 Hitachi High-Technologies Corporation Plasma processing method and plasma processing apparatus
CN103298235A (zh) * 2012-02-22 2013-09-11 朗姆研究公司 基于状态的功率和频率调节
CN110627644A (zh) * 2019-09-09 2019-12-31 株洲千金药业股份有限公司 一种辣椒素酯类化合物、其药学上可接受的盐及其制备方法和应用

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5779621A (en) * 1980-11-05 1982-05-18 Mitsubishi Electric Corp Plasma processing device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5779621A (en) * 1980-11-05 1982-05-18 Mitsubishi Electric Corp Plasma processing device

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63288021A (ja) * 1986-10-17 1988-11-25 Hitachi Ltd プラズマ処理方法
US4795529A (en) * 1986-10-17 1989-01-03 Hitachi, Ltd. Plasma treating method and apparatus therefor
JPH02503614A (ja) * 1987-06-01 1990-10-25 コミッサレ・ア・レナジイ・アトミック ガスプラズマによる食刻方法
JPS63311726A (ja) * 1987-06-15 1988-12-20 Ulvac Corp マイクロ波プラズマ処理装置
US5900162A (en) * 1989-02-15 1999-05-04 Hitachi, Ltd. Plasma etching method and apparatus
JPH03218627A (ja) * 1989-02-15 1991-09-26 Hitachi Ltd プラズマエッチング方法及び装置
US6165377A (en) * 1989-02-15 2000-12-26 Hitachi, Ltd. Plasma etching method and apparatus
JPH06342769A (ja) * 1992-08-21 1994-12-13 Nissin Electric Co Ltd エッチング方法及び装置
JPH08181125A (ja) * 1994-10-27 1996-07-12 Nec Corp プラズマ処理方法及びその装置
JPH09139364A (ja) * 1995-11-14 1997-05-27 Nec Corp 中性粒子ビーム処理装置
US6372654B1 (en) 1999-04-07 2002-04-16 Nec Corporation Apparatus for fabricating a semiconductor device and method of doing the same
US7112533B2 (en) 2000-08-31 2006-09-26 Micron Technology, Inc. Plasma etching system and method
US7507672B1 (en) 2000-08-31 2009-03-24 Micron Technology, Inc. Plasma etching system and method
US7611993B2 (en) 2002-04-26 2009-11-03 Hitachi High-Technologies Corporation Plasma processing method and plasma processing apparatus
CN103298235A (zh) * 2012-02-22 2013-09-11 朗姆研究公司 基于状态的功率和频率调节
CN110627644A (zh) * 2019-09-09 2019-12-31 株洲千金药业股份有限公司 一种辣椒素酯类化合物、其药学上可接受的盐及其制备方法和应用
CN110627644B (zh) * 2019-09-09 2022-06-07 株洲千金药业股份有限公司 一种辣椒素酯类化合物、其药学上可接受的盐及其制备方法和应用

Also Published As

Publication number Publication date
JPH0469415B2 (enrdf_load_stackoverflow) 1992-11-06

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