JPS61136254A - 複合形半導体装置 - Google Patents
複合形半導体装置Info
- Publication number
- JPS61136254A JPS61136254A JP59257368A JP25736884A JPS61136254A JP S61136254 A JPS61136254 A JP S61136254A JP 59257368 A JP59257368 A JP 59257368A JP 25736884 A JP25736884 A JP 25736884A JP S61136254 A JPS61136254 A JP S61136254A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- layer
- region
- semiconductor
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
- H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
Landscapes
- Bipolar Transistors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59257368A JPS61136254A (ja) | 1984-12-07 | 1984-12-07 | 複合形半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59257368A JPS61136254A (ja) | 1984-12-07 | 1984-12-07 | 複合形半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61136254A true JPS61136254A (ja) | 1986-06-24 |
| JPH0367347B2 JPH0367347B2 (enExample) | 1991-10-22 |
Family
ID=17305412
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59257368A Granted JPS61136254A (ja) | 1984-12-07 | 1984-12-07 | 複合形半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61136254A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6033931A (en) * | 1997-08-18 | 2000-03-07 | Texas Instruments Incorporated | Semiconductor device including stacked chips having metal patterned on circuit surface and one edge side of chip |
-
1984
- 1984-12-07 JP JP59257368A patent/JPS61136254A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6033931A (en) * | 1997-08-18 | 2000-03-07 | Texas Instruments Incorporated | Semiconductor device including stacked chips having metal patterned on circuit surface and one edge side of chip |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0367347B2 (enExample) | 1991-10-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |