JPS61134038A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To adhere a passivation film with good coverage, and to prevent the generation of cracks by a method wherein the passivation film is formed after aluminum wiring are formed and its recesses and steps are filled with an Si oxide film series film. CONSTITUTION:Similarly to the conventional case, an element-forming region, a gate poly Si electrode, etc. are formed on a substrate 11, and contact holes are bored. Aluminum wirings 14, 15 are formed, and next a coating solution for forming an Si oxide film series film is applied. Then, the Si oxide film 16 is formed by calcination in an N2 atmosphere. Since said coating solution has a low viscosity, the ends of the aluminum wirings 14 and 15 at the contact aperture part are filled with this coating solution. Here, calcination causes it to change into the oxide film series film 16, and at this step the wafer surface becomes gentle because the steps and recesses are filled with this film 16. Thereafter, a passivation film 17 is grown.

Description

[Detailed Description of the Invention] (Technical Field) The present invention relates to a method for manufacturing a semiconductor device, and particularly to a protective film on the surface of a pellet (hereinafter referred to as buffage 7 film).
It is about reliability.

(Prior art) The vasibasis membrane according to the prior art is as shown in Fig. 1. In FIG. 1, 3 is an insulating film, 4 and 5 are aluminum wiring lines, and 6 is a base film 7 and 7 film.

That is, in the prior art, the part of the contact hole 7 in particular has a concave shape, so the film 6 of the buff page 1 becomes thinner and thicker. 7 film t-Aluminum and basipacity when growing! 17 Cracks may occur due to stress due to differences in the coefficient of thermal expansion of the membrane. For this reason, when assembled in a case (Glass Tech Case), during reliability tests such as moisture resistance tests or bias tests, defects may occur in thin or cracked areas of the Bashiba 7 horn membrane, which may deteriorate reliability. friend.

(Structure 1 of the invention) A feature of the present invention is that after forming an aluminum wiring, a coating solution for forming a silicon oxide film is applied and baked to form a silicon oxide film on the recesses and steps of the aluminum wiring. The process consists of forming a film and then forming a coating/film.

An object of the present invention is to eliminate the above-mentioned drawbacks and provide a highly reliable semiconductor device. That is, according to the present invention, after the aluminum wiring is formed, a silicon oxide film-based film is formed in the recesses and steps, so that the recesses and ends of the aluminum wiring in the contact holes are filled, and the wafer surface becomes smooth. For this reason, a buff page = 17 film can be formed with good coverage and without cracking even in thin parts.

(Example) Next, an example will be explained in detail with reference to FIGS. 2(a) to (C).

First, contact holes are opened in FIG. 2 (not shown since element isolation regions, gate polysilicon electrodes, etc. are formed on the semiconductor substrate 11 in the same manner as in the prior art), and aluminum interconnections 14 and 15 are formed.

Next, as shown in FIG. 2 (bl), apply a coating solution t for forming a silicon oxide film. After that, it is baked in a N2 atmosphere at a temperature of 300°C to 500°C to form a silicon oxide film 1.
form 6. Since the coating liquid for forming a silicon oxide film has a low viscosity, the recesses of the aluminum wiring 14 and the ends of the aluminum wiring 15 in the contact openings are filled with the coating liquid for forming a silicon oxide film. By firing here, a dioxide film-based film 16 is formed. At this stage, the surface of the wafer 1 becomes smooth because the steps and depressions are filled with the oxide film 16. After this, as shown in Figure 2 (C),
117 film 17 is grown. Bashibeshi! The film 17 is, for example, a fermented film, a nitride film, a phosphor glass layer film, or a combination thereof. Since the passivation film 17 has a smooth surface, it can be deposited with good coverage. Therefore, there will be no extremely thin portions, and no cracks will occur.

As described above in detail, according to the present invention, aluminum wiring is formed and the recesses and steps are filled with a silicon oxide film. By forming a / film, it is possible to deposit the υvazobasic film with good coverage, and a passivation film that does not form cracks can be formed, making it possible to realize a highly reliable semiconductor device.

[Brief explanation of drawings]

FIG. 1 is a sectional view showing a conventional method. FIG. 2 is a sectional view showing an embodiment according to the present invention. 1.11... Semiconductor substrate, 2.12...
・Diffusion layer, 3.13...Insulating film, 4,5.14
．． 15... Aluminum wiring, 6,17...
...Passivation film, 16...Silicon oxide film-based film. For the sake of,

Claims (2)

[Claims] (1) A step of forming an aluminum wiring, a step of applying a coating liquid for forming a silicon oxide film and baking it to form a silicon oxide film in the recesses and steps of the aluminum wiring, and growing an insulating film. A method for manufacturing a semiconductor device, comprising the steps of: (2) Claim 1, wherein the insulating film is an oxide film, a phosphorus glass layer film, a nitride film, or a combination of an oxide film, a phosphorus glass layer film, and a nitride film.
) The method for manufacturing a semiconductor device according to item 2.