JPS61134035U - - Google Patents

Info

Publication number
JPS61134035U
JPS61134035U JP1985015824U JP1582485U JPS61134035U JP S61134035 U JPS61134035 U JP S61134035U JP 1985015824 U JP1985015824 U JP 1985015824U JP 1582485 U JP1582485 U JP 1582485U JP S61134035 U JPS61134035 U JP S61134035U
Authority
JP
Japan
Prior art keywords
diode chip
nickel plating
plating layer
soldered
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1985015824U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1985015824U priority Critical patent/JPS61134035U/ja
Publication of JPS61134035U publication Critical patent/JPS61134035U/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/05001—Internal layers
    • H01L2224/05073—Single internal layer
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    • H01L2224/0555—Shape
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    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
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    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/4823—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a pin of the item
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    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
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    • H01L2224/48475—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball
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    • H01L2224/48491—Connecting portions connected to auxiliary connecting means on the bonding areas, e.g. pre-ball, wedge-on-ball, ball-on-ball between the wire connector and the bonding area being an additional member attached to the bonding area through an adhesive or solder, e.g. buffer pad
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    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【図面の簡単な説明】
第１図はこの考案の一実施例に従うダイオード
チツプのボンデイング構造を示した部分側面図、
第２図は従来技術に従うダイオードチツプのボン
デイング構造の一例を示した部分側面図である。 １１……アルミニウムワイヤ、１２……１次側
アルミニウム電極、１３……ニツケル蒸着膜、１
４……ニツケル蒸着膜、１５……ニツケル蒸着膜
、１８……ダイオードチツプ、１９……銀・パラ
ジユウム導体層、２０……絶縁性基板、２１……
２次側アルミニウム電極。

Claims (1)

    【実用新案登録請求の範囲】
  1. ダイオードチツプ１８の上下両面にニツケルメ
    ツキ層１４，１５を施し、かつそのダイオードチ
    ツプ１８の下面のニツケルメツキ層１５を絶縁性
    基板２０面に形成された配線導体１９上に半田付
    けするとともに、上面のニツケルメツキ層１４に
    その対向面にニツケルメツキ層１３が施されたア
    ルミニウム電極１２を半田付けし、さらにそのア
    ルミニウム電極１２と外部電極２１とをアルミニ
    ウムワイヤ１１により結線してなることを特徴と
    するダイオードチツプのボンデイング装置。
JP1985015824U 1985-02-08 1985-02-08 Pending JPS61134035U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1985015824U JPS61134035U (ja) 1985-02-08 1985-02-08

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1985015824U JPS61134035U (ja) 1985-02-08 1985-02-08

Publications (1)

Publication Number Publication Date
JPS61134035U true JPS61134035U (ja) 1986-08-21

Family

ID=30502020

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1985015824U Pending JPS61134035U (ja) 1985-02-08 1985-02-08

Country Status (1)

Country Link
JP (1) JPS61134035U (ja)

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