JPS6113372B2 - - Google Patents

Info

Publication number
JPS6113372B2
JPS6113372B2 JP1300676A JP1300676A JPS6113372B2 JP S6113372 B2 JPS6113372 B2 JP S6113372B2 JP 1300676 A JP1300676 A JP 1300676A JP 1300676 A JP1300676 A JP 1300676A JP S6113372 B2 JPS6113372 B2 JP S6113372B2
Authority
JP
Japan
Prior art keywords
crystal
substrate
substrate crystal
melt
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1300676A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5295970A (en
Inventor
Isamu Sakuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP1300676A priority Critical patent/JPS5295970A/ja
Publication of JPS5295970A publication Critical patent/JPS5295970A/ja
Publication of JPS6113372B2 publication Critical patent/JPS6113372B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP1300676A 1976-02-09 1976-02-09 Liquid growth Granted JPS5295970A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1300676A JPS5295970A (en) 1976-02-09 1976-02-09 Liquid growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1300676A JPS5295970A (en) 1976-02-09 1976-02-09 Liquid growth

Publications (2)

Publication Number Publication Date
JPS5295970A JPS5295970A (en) 1977-08-12
JPS6113372B2 true JPS6113372B2 (enrdf_load_stackoverflow) 1986-04-12

Family

ID=11821080

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1300676A Granted JPS5295970A (en) 1976-02-09 1976-02-09 Liquid growth

Country Status (1)

Country Link
JP (1) JPS5295970A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5558519A (en) * 1978-10-24 1980-05-01 Nec Corp Vapor phase growth of 3-v group compound semiconductor
JPS5559716A (en) * 1978-10-30 1980-05-06 Nec Corp Liquid phase growing method of 3-5 group compound semiconductor

Also Published As

Publication number Publication date
JPS5295970A (en) 1977-08-12

Similar Documents

Publication Publication Date Title
Fan et al. Lateral epitaxy by seeded solidification for growth of single‐crystal Si films on insulators
Saul Reduced dislocation densities in liquid phase epitaxy layers by intermittent growth
US4948751A (en) Moelcular beam epitaxy for selective epitaxial growth of III - V compound semiconductor
JPS6113372B2 (enrdf_load_stackoverflow)
US4426237A (en) Volatile metal oxide suppression in molecular beam epitaxy systems
US4468258A (en) Method of controlling the partial pressure of at least one substance mixture or mixture of substances
DE2547692C3 (de) Verfahren zum Herstellen einer Halbleiteranordnung
JPH0676275B2 (ja) 気相エピタキシャル成長装置および基板の加熱方法
JPH0361335B2 (enrdf_load_stackoverflow)
JP2747823B2 (ja) ガリウムヒ素層の製造方法及びガリウムヒ素・アルミニウムガリウムヒ素積層体の製造方法
JPH05206520A (ja) p型II−VI族化合物半導体の製造方法
JP2003267794A (ja) 結晶成長方法及び結晶成長装置
JPH0330288B2 (enrdf_load_stackoverflow)
JPS5846628A (ja) 半導体の液相エピタキシヤル成長方法
JPS628518A (ja) 液相成長法
JPS63147892A (ja) 液相エピタキシヤル成長方法
JPS60166296A (ja) 液相エピタキシヤル成長装置
JPS62244128A (ja) 液相エピタキシヤル成長法
JPS61280613A (ja) 液相エピタキシヤル成長方法
JPH08133888A (ja) 液相エピタキシャル成長方法及びその装置
JPH0322052B2 (enrdf_load_stackoverflow)
JPS61276316A (ja) 半導体装置の製造方法
JPH01181536A (ja) 2−6族化合物半導体薄膜の選択成長方法
JPS6262049B2 (enrdf_load_stackoverflow)
JPS60218851A (ja) 半導体装置の製造方法