JPS5295970A - Liquid growth - Google Patents
Liquid growthInfo
- Publication number
- JPS5295970A JPS5295970A JP1300676A JP1300676A JPS5295970A JP S5295970 A JPS5295970 A JP S5295970A JP 1300676 A JP1300676 A JP 1300676A JP 1300676 A JP1300676 A JP 1300676A JP S5295970 A JPS5295970 A JP S5295970A
- Authority
- JP
- Japan
- Prior art keywords
- gaas
- liquid growth
- epitachytial
- cavity
- base plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1300676A JPS5295970A (en) | 1976-02-09 | 1976-02-09 | Liquid growth |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1300676A JPS5295970A (en) | 1976-02-09 | 1976-02-09 | Liquid growth |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5295970A true JPS5295970A (en) | 1977-08-12 |
JPS6113372B2 JPS6113372B2 (ja) | 1986-04-12 |
Family
ID=11821080
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1300676A Granted JPS5295970A (en) | 1976-02-09 | 1976-02-09 | Liquid growth |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5295970A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5558519A (en) * | 1978-10-24 | 1980-05-01 | Nec Corp | Vapor phase growth of 3-v group compound semiconductor |
JPS5559716A (en) * | 1978-10-30 | 1980-05-06 | Nec Corp | Liquid phase growing method of 3-5 group compound semiconductor |
-
1976
- 1976-02-09 JP JP1300676A patent/JPS5295970A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5558519A (en) * | 1978-10-24 | 1980-05-01 | Nec Corp | Vapor phase growth of 3-v group compound semiconductor |
JPS5559716A (en) * | 1978-10-30 | 1980-05-06 | Nec Corp | Liquid phase growing method of 3-5 group compound semiconductor |
Also Published As
Publication number | Publication date |
---|---|
JPS6113372B2 (ja) | 1986-04-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IT7819980A0 (it) | Procedimento per la produzione di oggetti di carbonio o grafite con elevata solidita'. | |
GB1546979A (en) | Process for the preparation of alpha-l-aspartyl-l-phenylallanine methyl ester | |
JPS5439191A (en) | Oxygen detector | |
JPS5295970A (en) | Liquid growth | |
JPS52151114A (en) | Preparation of dimethylforamide | |
ES486851A1 (es) | Un procedimiento de preparacion de acido 3a,7b-dihidroxico- lanico | |
JPS5420190A (en) | Preparation of bacterial cells | |
JPS5326664A (en) | Formation of ohmic contact | |
JPS5217889A (en) | Enzyme electrode | |
JPS5285165A (en) | Preparation of indoles | |
JPS527667A (en) | Porous electro-potical body | |
JPS5282786A (en) | Preparation of l-serine by fermentation | |
JPS524782A (en) | Liquid phase epitaxial growth method | |
JPS53139970A (en) | Liquid phase epitaxial growth method of gaas crystal | |
JPS5429152A (en) | Cooling liquid | |
JPS53458A (en) | Cooling device of ebullition type | |
JPS5356966A (en) | Boat for liquid phase epitaxial growth | |
JPS51112495A (en) | Process for activating stabilized raney nickel catalysts | |
JPS5270759A (en) | Liquid phase growth equipment | |
JPS536489A (en) | Optical resolution of n-amyl-dl-amino acids | |
JPS5338692A (en) | 7-amino-3-halo-3-cephem-4-carboxylic acids | |
JPS51114710A (en) | Bottom plate structure | |
JPS53139974A (en) | Semiconductor device | |
JPS5228863A (en) | Process for growing in liquid phase | |
JPS52103020A (en) | Floating plate for covering liquid surface |