JPS61131449A - Surface washing method - Google Patents
Surface washing methodInfo
- Publication number
- JPS61131449A JPS61131449A JP25187384A JP25187384A JPS61131449A JP S61131449 A JPS61131449 A JP S61131449A JP 25187384 A JP25187384 A JP 25187384A JP 25187384 A JP25187384 A JP 25187384A JP S61131449 A JPS61131449 A JP S61131449A
- Authority
- JP
- Japan
- Prior art keywords
- ozone
- cleaning
- infrared rays
- cleaned
- infrared
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野・〕
本発明は、被洗浄物表面に付着した微量有機物を除外す
・る方法に係り、特に電子部品、光学部へ。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a method for removing trace amounts of organic matter adhering to the surface of an object to be cleaned, particularly for electronic parts and optical parts.
及び医療器具等の表面の洗浄に好適な洗浄方法に関する
。The present invention also relates to a cleaning method suitable for cleaning the surfaces of medical instruments and the like.
〔発明の背景〕 。[Background of the invention].
スパッタリングや蒸着等による薄膜形成工程の前処理と
して基板表面等を洗−浄するため、湿式洗浄やプラズマ
アッシャ−法等が用いられているが、装置の大盤化や、
鼻空装置を必要とする点に問題がある。 ・
・
一方、最近では紫外線によるオゾン洗浄方法がある。例
えば、被洗浄物の表面に付着した微量の有機物を洗浄す
る方法としては、米国・特許第４０２８１３５号に記載
の”ように、低圧水銀灯を使用して被洗浄物の表面に紫
外線を照射する・ものがある。Wet cleaning and plasma asher methods are used to clean the substrate surface as a pretreatment for thin film formation processes such as sputtering and vapor deposition.
The problem is that it requires a nasal air device.・
・On the other hand, recently there is an ozone cleaning method using ultraviolet rays. For example, as a method for cleaning trace amounts of organic matter adhering to the surface of the object to be cleaned, as described in U.S. Pat. There is something.
しかし、直進性を、有する紫外線では被洗浄物の形状に
制限があり、複雑な形状を有する被洗浄物の表面の洗浄
性については配慮されていなかった。However, the shape of the object to be cleaned is limited by ultraviolet rays having straight-travel properties, and no consideration has been given to the cleanability of the surface of the object to be cleaned, which has a complicated shape.
また、発光管近傍でオゾン濃度、酸素ラジカル濃度が高
く、洗浄力を向上させるためには被洗浄物を発光管に近
づけなければならない。その反面、紫外線の強度分布の
影響を受け、洗浄むらが発生するといった難点があった
。Furthermore, the ozone concentration and oxygen radical concentration are high near the arc tube, and in order to improve the cleaning power, the object to be cleaned must be brought close to the arc tube. On the other hand, there is a problem in that uneven cleaning occurs due to the influence of the intensity distribution of ultraviolet rays.
本発明は、被洗浄物の表面に付着し九微量の有機物を簡
易な設備で短時間に、かつ、一般大気中にて被洗浄物の
形状Ｋかかわらず洗浄しうる洗浄方法を提供することを
目的とする。The present invention aims to provide a cleaning method capable of cleaning trace amounts of organic matter adhering to the surface of an object to be cleaned in a short time using simple equipment and in the general atmosphere regardless of the shape of the object to be cleaned. purpose.
上記目的を達成するために、本発明の表面洗浄）方法は
、外囲器内にオゾンを充満させ、そのオゾン雰囲気中に
て被洗浄物に０．７２μｍ〜１０００μｍの波長域の赤
外線を照射する点に特徴を有するっ
上記オゾンは外ｄ器内に設けたオゾン発生器により充満
させるか、あるいは外部から供給してもよい。In order to achieve the above object, the surface cleaning method of the present invention involves filling an envelope with ozone and irradiating the object to be cleaned with infrared rays in the wavelength range of 0.72 μm to 1000 μm in the ozone atmosphere. The above-mentioned ozone may be filled with an ozone generator provided in the external device, or may be supplied from the outside.
赤外線の波長域を０．７２μｍ〜１００μｍとするとと
くより、顕著な効果が得られ、さらには有機物の赤外線
吸収域に対応する４５μｍ〜４０μｍにおいて格別顕著
な効果が得られる。When the wavelength range of infrared rays is 0.72 μm to 100 μm, a particularly remarkable effect can be obtained, and an especially remarkable effect can be obtained in a wavelength range of 45 μm to 40 μm, which corresponds to the infrared absorption range of organic substances.
このように、本発明によれば、赤外線の照射により先ず
選択的に有機物の昇温か起こるため、有機物表面にオゾ
ンが酸素ラジカルに変換し、被洗浄物表面の微量有機物
の分解酸化反応を促進できる。その結果、洗浄上の向上
、洗浄時間の短縮化が図れ、また被洗浄物表面やその近
傍で酸素ラジカルを発生させる九め洗浄物は形状Ｋかか
わりなく効果的に洗浄可能となる。また真空装置等も必
要としないので設備を小型化できろ。As described above, according to the present invention, since the temperature of organic matter is selectively raised by irradiation with infrared rays, ozone on the surface of the organic matter is converted into oxygen radicals, and the decomposition and oxidation reaction of trace amounts of organic matter on the surface of the object to be cleaned can be promoted. . As a result, cleaning performance can be improved and cleaning time can be shortened, and objects to be cleaned that generate oxygen radicals on or near the surface of the object to be cleaned can be effectively cleaned regardless of the shape K. Also, since no vacuum equipment is required, the equipment can be made smaller.
次（、本発明の一実施例を説明する。＃ｔ１図に本発明
の洗浄方法を実施するための洗浄装置の部品構成概略図
を、示す。洗浄ハウジング１内に洗浄テーブル４を配置
し、その上部に被洗浄物５を位置する。赤外線を照射す
る機能として遠赤外線ヒータ２を、被洗浄物上方に位置
する。オゾンを発生する装置としてチャージャーワイヤ
３を、被洗浄物上方に位置する。なお、オゾン発生器と
じて紫外線発光管等を用いる方法も有効である。Next, one embodiment of the present invention will be described. Fig. #t1 shows a schematic diagram of the component configuration of a cleaning device for carrying out the cleaning method of the present invention. A cleaning table 4 is arranged in the cleaning housing 1, An object to be cleaned 5 is placed above it.A far-infrared heater 2 is placed above the object to be cleaned as a function of irradiating infrared rays.A charger wire 3 is placed above the object to be cleaned as a device for generating ozone. Note that a method of using an ultraviolet light emitting tube or the like as an ozone generator is also effective.
第２図にオゾンをハウジングｌ外から供給するようにし
た場合の洗浄装置の部品構成概略図を示す、オゾン発生
部拡別に設け、発生し友オゾンはオゾン導入口６より導
入する。有機物を酸化した結果生じる水、二酸化炭素等
の生成物は、脱気ロアより排出する。 ・□
′ 次に、第３図、第４図に本笑施例第１図の装置を使
用し次効果を示す、赤外線成長域としては、α７２μｍ
〜１００μｍとし、被洗浄物として泗ａｃ：１単結晶板
を用い、被洗浄物表１ｉｒＫワックスを薄膜形成させ、
本装置ｆは洗浄を行った後、時間毎に赤外線吸収スペク
トルを測定し、Ｃ−Ｈ結合の特定吸収ピークである。Ｚ
す２０ｃｍ−’ １ ンＣ＝Ｏ結合の特定吸収ピークで
ある□Ｌ７２０ｍ−’の赤外線吸収強度を求めた。洗浄
における被洗浄物表面の温度は１５０Ｃとなるように設
定した、ここで、！９２０ｃｍ−’における吸収強度の
時間変化を第３図に示す。図中Ａは被洗浄物表面へオゾ
ンを噴射した場合の効果であ、９、Ｂは本実施例による
効果である。本実施例の場合、Ｃ−Ｈ結合の減少が速く
、オゾン噴射に比べ酸化効果にすぐれることがわかる。FIG. 2 shows a schematic view of the parts structure of the cleaning device in the case where ozone is supplied from outside the housing 1. It is provided in an enlarged view of the ozone generating section, and the generated ozone is introduced from the ozone inlet 6. Products such as water and carbon dioxide produced as a result of oxidizing organic matter are discharged from the deaeration lower.・□ ′ Next, Figures 3 and 4 show the following effect using the apparatus shown in Figure 1 of this example.The infrared growth region is α72μm.
~100 μm, using a ac:1 single crystal plate as the object to be cleaned, forming a thin film of irK wax on the object to be cleaned,
After cleaning the device f, the infrared absorption spectrum is measured every hour, and the specific absorption peak of the C--H bond is detected. Z
The infrared absorption intensity of □L720m-', which is a specific absorption peak of the C=O bond at 20cm-' 1 , was determined. The temperature of the surface of the object to be cleaned during cleaning was set to 150C, where: Figure 3 shows the temporal change in absorption intensity at 920 cm-'. In the figure, A shows the effect when ozone is injected onto the surface of the object to be cleaned, and 9 and B show the effect of this embodiment. In the case of this example, it can be seen that the reduction of C--H bonds is rapid and the oxidation effect is superior to that of ozone injection.
また、第４図は、１．７２０ｃｍ−鳳における吸収強度
の時間変化であり、図中人、Ｂは前述し次洗浄による効
果である。図中Ｂを見るとＣ−Ｈ結合が酸化され、＞Ｃ
＝Ｏとなることがわかる。さらに洗浄を行うことによＶ
＞Ｃ＝Ｏが減少することから、Ｃ０３とＨｓ Ｏとなり
除去されていくと推測できる。一方、図中五では、まだ
＞Ｃ＝Ｏが増加している段階で６り、洗浄力はかなり遅
いと判断でき、これらの結果から本実施例では、微量有
機部を高速で除去できる効果がある。Moreover, FIG. 4 shows the time change of the absorption intensity at 1.720 cm-Otori, and B in the figure is the effect of the subsequent cleaning as described above. Looking at B in the figure, the C-H bond is oxidized, >C
It can be seen that =O. By further washing, V
> Since C=O decreases, it can be inferred that it becomes C03 and HsO and is removed. On the other hand, in Figure 5, 6 indicates that >C=O is still increasing, and it can be judged that the cleaning power is quite slow.From these results, this example shows that trace organic parts can be removed at high speed. be.
ここでは、赤外線として０．７２μｆｆｌ−１００μｍ
の赤外線ヒータを使用したが、赤外線波長域である０、
７２μｍ〜１０００μｍまでの赤外線を照射することも
同様の効果は期待でき、また有機物のほとんどの赤外線
吸収域である２５μｍ〜４０μｍまでの波長を主体とす
る赤外線を照射することは、さらに効率良く有機物を除
去できる効果がある。Here, as infrared rays, 0.72μffl-100μm
I used an infrared heater of 0, which is in the infrared wavelength range.
A similar effect can be expected by irradiating infrared rays from 72 μm to 1000 μm, and irradiating infrared rays mainly having wavelengths from 25 μm to 40 μm, which is the infrared absorption range of most organic materials, can more efficiently remove organic materials. It has the effect of removing
以上述べたように、本発明によれば、被洗浄物の表面に
付着した微量の有機物を簡易な設備で短時間に、かつ形
状にかかわらず洗浄することができる。As described above, according to the present invention, trace amounts of organic matter adhering to the surface of the object to be cleaned can be cleaned in a short time using simple equipment, regardless of the shape.
第１図は本発明の第１の実施例を示す表面洗浄装置の部
品構成概略図、第２図は第２の実施例を示す表面洗浄装
置の部品構成概略図、第３図は赤外線吸収スペクトル測
定によるｚ９２０α−１の赤外吸収強度を示す特性図、
第４図は１．７２０ｃｕｔ−’における赤外線吸収強度
を示す特性図である。
ｌ・・・洗浄ハウジング、２・・・遠赤外線ヒータ、３
・・・チャージャーワイヤ、４・・・洗浄テーブル、５
・・・被洗浄物、６・・・オゾン導入口、７・・・脱気
口、ム・・・オゾン噴射による洗浄結果、Ｂ・・・本冥
施飼による洗浄結果。Fig. 1 is a schematic diagram of the component configuration of a surface cleaning device showing the first embodiment of the present invention, Fig. 2 is a schematic diagram of the component configuration of the surface cleaning device showing the second embodiment, and Fig. 3 is an infrared absorption spectrum. A characteristic diagram showing the infrared absorption intensity of z920α-1 by measurement,
FIG. 4 is a characteristic diagram showing the infrared absorption intensity at 1.720 cut-'. l...Cleaning housing, 2...Far infrared heater, 3
...Charger wire, 4...Cleaning table, 5
...Object to be cleaned, 6.Ozone inlet, 7. Deaeration port, M..Cleaning result by ozone injection, B..Cleaning result by main treatment.
Claims (1)
被洗浄物に０．７２μｍ〜１０００μｍの波長域の赤外
線を照射することを特徴とする表面洗浄方法。 ２、特許請求の範囲第１項記載の方法において、オゾン
は外囲器内に設けられたオゾン発生器により充満させる
ことを特徴とする表面洗浄方法。 ３、特許請求の範囲第１項記載の方法において、オゾン
は外囲器の外部から供給することを特徴とする表面洗浄
方法。 ４、特許請求の範囲第１項又は第２項記載の方法におい
て、赤外線の波長域は０．７２μｍ〜１００μｍである
ことを特徴とする表面洗浄方法。 ５、特許請求の範囲第１項又は第２項記載の方法におい
て、赤外線の波長域は２．５μｍ〜４０μｍであること
を特徴とする表面洗浄方法。[Scope of Claims] 1. A surface cleaning method characterized by irradiating an object to be cleaned placed in an ozone atmosphere filled in an envelope with infrared rays in a wavelength range of 0.72 μm to 1000 μm. 2. A surface cleaning method according to claim 1, characterized in that ozone is filled with an ozone generator provided in the envelope. 3. A surface cleaning method according to claim 1, characterized in that ozone is supplied from outside the envelope. 4. A surface cleaning method according to claim 1 or 2, characterized in that the wavelength range of the infrared rays is 0.72 μm to 100 μm. 5. A surface cleaning method according to claim 1 or 2, characterized in that the wavelength range of the infrared rays is 2.5 μm to 40 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25187384A JPS61131449A (en) | 1984-11-30 | 1984-11-30 | Surface washing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25187384A JPS61131449A (en) | 1984-11-30 | 1984-11-30 | Surface washing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61131449A true JPS61131449A (en) | 1986-06-19 |
Family
ID=17229202
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25187384A Pending JPS61131449A (en) | 1984-11-30 | 1984-11-30 | Surface washing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61131449A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63178884A (en) * | 1987-01-19 | 1988-07-22 | 三菱重工業株式会社 | Method of removing extraneous matter |
| JP2009146907A (en) * | 2009-03-23 | 2009-07-02 | Gs Yuasa Corporation | Ultraviolet radiation device |
-
1984
- 1984-11-30 JP JP25187384A patent/JPS61131449A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63178884A (en) * | 1987-01-19 | 1988-07-22 | 三菱重工業株式会社 | Method of removing extraneous matter |
| JP2009146907A (en) * | 2009-03-23 | 2009-07-02 | Gs Yuasa Corporation | Ultraviolet radiation device |
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