JPS6077430A - Separating method of organic material - Google Patents
Separating method of organic materialInfo
- Publication number
- JPS6077430A JPS6077430A JP18452183A JP18452183A JPS6077430A JP S6077430 A JPS6077430 A JP S6077430A JP 18452183 A JP18452183 A JP 18452183A JP 18452183 A JP18452183 A JP 18452183A JP S6077430 A JPS6077430 A JP S6077430A
- Authority
- JP
- Japan
- Prior art keywords
- organic material
- film
- ultraviolet rays
- substrate
- material film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011368 organic material Substances 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims description 26
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 26
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000000126 substance Substances 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims 2
- 238000005507 spraying Methods 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 8
- 239000002184 metal Substances 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 239000002253 acid Substances 0.000 abstract description 3
- 238000005286 illumination Methods 0.000 abstract description 2
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical class O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000006862 quantum yield reaction Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- -1 carbohydrate compounds Chemical class 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
（技術分野）
この発明は、基板に付着している１種類あるいは複数種
類の有機物質の膜を簡単かつすみやかに剥離することが
できるようにした有機物質の膜を（従来技術）
基板上に付着している有機物質の膜を剥離する従来から
の方法には、主として３通シあった。Detailed Description of the Invention (Technical Field) The present invention provides a film of an organic material ( Prior Art) There are mainly three conventional methods for peeling off a film of an organic substance adhering to a substrate.
その第１の方法は、ガラスプラズマによる方法はガラス
プラズマによる方法であシ、この方法は基板が金属であ
る場合、金属が腐食し易く、基板を腐食させないガスの
選択が内錐であり、通常の酸素プラズマでは、前記膜に
対する剥離速度が以下に述べる第２、第３の方法と比較
して遅いと云う欠点があった。The first method is a method using glass plasma. In this method, when the substrate is a metal, the metal is likely to corrode, and the selection of a gas that does not corrode the substrate is the inner conical method. The oxygen plasma has a drawback that the peeling rate for the film is slower than that of the second and third methods described below.
第２の方法は、オゾンを含む加熱した酸（特公昭５２−
１２０６３号公報）あるいは過酸化水素水と硫酸の混合
液は加熱温度あるいは混合比などに比較的狭い特定の条
件であるため、製造が難しく。The second method is to use a heated acid containing ozone (Japanese Patent Publication No. 52-
12063) or a mixed solution of hydrogen peroxide and sulfuric acid is difficult to manufacture because of relatively narrow specific conditions such as heating temperature or mixing ratio.
取扱いが不便で、爆発碌どの危険性を有していた。It was inconvenient to handle and posed the risk of explosion.
また、第３の方法は、大気中で前記膜に紫外線を照射し
た後、適当な除去剤に浸漬する方法（特願昭５５−１５
８６３７号公報）は、空気あるいはオゾンを含む空気の
圧力が低い場合は、ラソカル酸去の１・−７−＃＊ （
１４周のフォトンｘｈ登＃：すス葎成物の個数）が２〜
６程度と低いので、酸化力が弱−く、除去剤での浸漬時
間が５分〜１０分程度と長くなると云う欠点があった。A third method is a method in which the film is irradiated with ultraviolet rays in the atmosphere and then immersed in a suitable removal agent (Japanese Patent Application No. 1983-15).
No. 8637), when the pressure of air or ozone-containing air is low, 1・-7-#* (
14 laps of photon xh (number of soot products) is 2~
Since the oxidizing power is low at about 6, the oxidizing power is weak and the immersion time in the remover is long, about 5 to 10 minutes.
（発明の目的）
この発明は、上記従来の欠点を除去するためになされた
もので、金属などの基板を腐食せずに、基板に付着した
１種類あるいは複数種類の有機物質の膜を簡便かつ安全
に、しかもすみやかに基板上よシ剥離することのできる
有機材料を剥離する方法を提供することを目的とする。(Purpose of the Invention) The present invention was made to eliminate the above-mentioned drawbacks of the conventional technology, and it is possible to easily and easily remove a film of one or more types of organic substances attached to a substrate such as metal without corroding the substrate. It is an object of the present invention to provide a method for peeling off an organic material that can be safely and quickly removed from a substrate.
（発明の概要）
この発明の要点は、基板上に付着した１種類あるいは複
数種類の治機物質の膜と接している過酸化水素水に紫外
線を照射するか、あるいは紫外線が照射された過酸化水
素水を有機物質の膜に噴射させるか、さらには紫外線照
射を行なった後加熱した硫酸を有機羽村膜に接触させる
かあるいはこの硫酸と過酸水素水を交互に有機材料膜に
接触させるようにしたものである。(Summary of the Invention) The main point of this invention is to irradiate ultraviolet rays to a hydrogen peroxide solution that is in contact with a film of one or more types of treatment substances adhered to a substrate, or to Hydrogen water is sprayed onto the organic material film, or furthermore, heated sulfuric acid is brought into contact with the organic Hamura film after ultraviolet irradiation, or this sulfuric acid and hydrogen peroxide water are alternately brought into contact with the organic material film. This is what I did.
（実施例）
以下、この発明の有機材料膜を剥離する方法の実施例に
ついて図面に基づき説明する。第１図はその一実施例を
説明するための図である。(Example) Hereinafter, an example of the method for peeling off an organic material film of the present invention will be described based on the drawings. FIG. 1 is a diagram for explaining one embodiment.
この第１図におけるｌは有機羽村膜であシ、この有機羽
村膜１は基板ＩＡ上に付着したものである。基板ＩＡ上
の有機オオ料膜ＩＡは過酸化水素水２に」妾している。In FIG. 1, 1 is an organic Hamura film, and this organic Hamura film 1 is deposited on the substrate IA. The organic oxide film IA on the substrate IA is covered with hydrogen peroxide solution 2.
この過酸化水素水２に、紫外線照射袋Ｒ３よシ紫外線３
Ａを照射するようにしている。この紫外線照射装置３は
過酸化水素水２を十分に分解するだけの照度（たとえば
、波長２６００人、０．１〜１ ′Ｎ／ｃｄ）を有する
ものである。Add ultraviolet ray 3 to this hydrogen peroxide solution 2 and UV irradiation bag R3.
I am trying to irradiate A. This ultraviolet irradiation device 3 has an illumination intensity (for example, wavelength 2600, 0.1 to 1'N/cd) to sufficiently decompose the hydrogen peroxide solution 2.
紫外整３Ａを照射すると、その照射時に過酸化水素水２
は分解し、前期遊離過程においてラジカル酸素（０′）
を発生させ、また、２次過程において、パイラジカル酸
素（０２）を発生させる。When irradiated with ultraviolet light 3A, hydrogen peroxide solution 2
is decomposed, and radical oxygen (0') is generated in the early liberation process.
is generated, and in a secondary process, pi radical oxygen (02) is generated.
これらは極めて酸化力が強いので、有機材料膜１を酸化
しながら基板ＩＡよシ剥離する過酸化水素水２の濃度お
よびＰＨを選択することによル、紫外線照射によシ、前
期遊離過程で発生するラジカル酸素および２次過程で発
生するパイラジカル酸素の量子収率を約３００〜５００
まで増大できるので１強力な酸化水用を生じ、有機材料
膜１は炭水化合物および水に分解されるので、有機材料
膜１を剥離する利点がある。Since these have extremely strong oxidizing power, by selecting the concentration and pH of the hydrogen peroxide solution 2 that peels off the substrate IA while oxidizing the organic material film 1, UV irradiation can be performed. The quantum yield of radical oxygen generated and pi radical oxygen generated in the secondary process is approximately 300 to 500.
Since the organic material film 1 is decomposed into carbohydrate compounds and water, there is an advantage that the organic material film 1 can be peeled off.
たとえば、過酸化水素水２の濃度は６０％〜９０チ、Ｐ
Ｈ５〜６．紫外照射０．１〜ＩＷ乙−１λ−２００ＯＡ
以上で上述の良好な結果が得られる。For example, the concentration of hydrogen peroxide solution 2 is 60% to 90%, P
H5-6. Ultraviolet irradiation 0.1~IW Otsu-1λ-200OA
With the above, the above-mentioned good results can be obtained.
これは、前述の第３の方法では量子収率が２〜６である
のと比較して、大巾な改善である。This is a significant improvement compared to the quantum yield of 2 to 6 in the third method described above.
また、過酸化水素水２は金属を腐食しないので、有機物
質、すなわち、有’ＡＵ料膜１のみを下地である基板Ｉ
Ａ（金屑など）を傷付けることなく除去できる。In addition, since the hydrogen peroxide solution 2 does not corrode metals, it is preferable to use only an organic material, that is, an AU material film 1, as a base material for the substrate I.
A (gold scraps, etc.) can be removed without damaging them.
さらに、室温で危険な強酸を使わないので、安全で取扱
いが容易である。そして必要な処理時間に関しては、従
来の第３の方法と比較して半減できる利点を有する。Furthermore, since it does not use dangerous strong acids at room temperature, it is safe and easy to handle. As for the required processing time, it has the advantage of being halved compared to the conventional third method.
次に、この発明の第２の実施例について述べる。Next, a second embodiment of the invention will be described.
上記第１の実施例においては、酸化作用のみによる剥離
方法を説明したが、第１の実施例の紫外線３Ａの照射を
行った後、加熱した硫酸を有機材料膜２に接触させるよ
うにしてもよい１、また、前記過酸化水素水２および前
記硫酸を交互に有機材料膜１に接触されば、一層の効果
がある。In the first embodiment described above, a peeling method using only oxidation was explained, but it is also possible to bring heated sulfuric acid into contact with the organic material film 2 after irradiation with the ultraviolet 3A of the first embodiment. Good 1. Further, if the hydrogen peroxide solution 2 and the sulfuric acid are brought into contact with the organic material film 1 alternately, the effect will be even greater.
次に、この発明の第３の実施例について第２図に基づき
説明する。この第２図は第３の実施例を説明するための
図であシ、第１図と同一部分には同一符号が伺されてい
る。Next, a third embodiment of the present invention will be described based on FIG. 2. This FIG. 2 is a diagram for explaining the third embodiment, and the same parts as in FIG. 1 are denoted by the same reference numerals.
この第２図では、基板ＩＡ上に付着した有機材料膜１上
に過酸化水素水２をスプレーノズル４に噴射して衝突さ
せるとともに、紫外線照射装置３よυ発生した紫外線３
Ａが過酸化水素水２を照射する。In FIG. 2, a hydrogen peroxide solution 2 is injected from a spray nozzle 4 onto an organic material film 1 adhered to a substrate IA and is caused to collide with the organic material film 1.
A irradiates hydrogen peroxide solution 2.
この紫外線３Ａが照射された過１ソ化水素水２（発生し
たラジカル酸素を含む）を有機材料膜１上にスプレーす
る。これによシ、有機材料膜１は第１の実施例の場合と
同様（でして、基板ＩＡから剥離されることになる。The organic material film 1 is sprayed with the hydrogen peroxide water 2 (containing the generated radical oxygen) which has been irradiated with the ultraviolet rays 3A. As a result, the organic material film 1 is peeled off from the substrate IA in the same manner as in the first embodiment.
次に、第３図によシ、この発明の第４の実施例について
説明する。この第３Ｍにおいても、第１図および第２図
と同一部分には同一符号が付されている。Next, referring to FIG. 3, a fourth embodiment of the present invention will be described. In this 3M as well, the same parts as in FIGS. 1 and 2 are given the same reference numerals.
この第４の実施例においても、過酸化水素水２はスプレ
ーノズル４から噴射され、翁機桐料膜１上に噴射すると
ともに、複数の紫外線照射装置３から紫外線３Ａを発生
させ、この紫外線３Ａを過酸化水素水に照射させる。つ
まシ、紫外線３Ａが照射された過酸化水素水２を有機材
料膜１上に噴射する。この場合も上記谷実施例と同様の
効果が得られるものである。Also in this fourth embodiment, the hydrogen peroxide solution 2 is injected from the spray nozzle 4 onto the Okinaki Kirin film 1, and at the same time, a plurality of ultraviolet ray irradiation devices 3 generate ultraviolet rays 3A, and the ultraviolet rays 3A are Irradiate hydrogen oxide water. Then, hydrogen peroxide solution 2 irradiated with ultraviolet rays 3A is sprayed onto the organic material film 1. In this case as well, the same effects as in the valley embodiment described above can be obtained.
なお、第３の実施例および第４の実施例において、有機
材料ＢＭ１のイｉＪ着している基板ＩＡを回転させれば
、より一層の効果がある。In the third and fourth embodiments, even more effects can be obtained by rotating the substrate IA on which the organic material BM1 is attached.
（発明の効果）
以上のように、この発明の有機材料膜を剥離する方法に
よれば、基板に付着した有機材料膜と接触している過酸
化水素水に紫外線を照射させるかあるいは紫外線の照射
した過酸化水素水を有機材料膜に噴射させるか、さらに
は過酸化水素水に紫外線を照射した後に加熱した硫酸ま
たはこの硫酸と過酸化水素水を交互に有機拐科膜に接触
させるようにしたので、基板に伺着した廟機利料膜を簡
便かつすみやかに基板から剥離することができる。(Effects of the Invention) As described above, according to the method for peeling off an organic material film of the present invention, hydrogen peroxide solution that is in contact with an organic material film attached to a substrate is irradiated with ultraviolet rays, or irradiated with ultraviolet rays. Either the hydrogen peroxide solution was sprayed onto the organic material film, or the hydrogen peroxide solution was irradiated with ultraviolet rays and then heated sulfuric acid or the sulfuric acid and hydrogen peroxide solution were alternately brought into contact with the organic material film. Therefore, the mausoleum material film adhering to the substrate can be easily and quickly peeled off from the substrate.
したがって、基板を選択エツチングした後、有４ｆＡ利
料膜を剥離することまたは基板の洗浄に利用することが
できる。Therefore, after selectively etching the substrate, it can be used to strip off the 4fA interest film or to clean the substrate.
特に、半導体基板上あるいは半等体製造用ガラスマスク
上の金属膜に付着したフォトレノストの除去など、極め
て高い清浄度および微細なパターンオδ度の要求される
分野で鳴動である。This is particularly important in fields that require extremely high cleanliness and fine pattern accuracy, such as the removal of photorenost adhered to metal films on semiconductor substrates or glass masks used in the manufacture of semi-conductors.
第１図はこの発明の有機旧科膜を剥離する方法の一実施
例を説明するための図、第２図および第３図はそれぞれ
この発明の有機材料膜を剥離する方法の他の実施例を説
明するだめの図である。
１・・・有機材料膜、ＬＡ・・・基板、２・・・過酸化
水素水、３・・・紫外線照射装置、３Ａ・・・紫外線、
４・・・スプレーノズル。
第１図
Ａ
第２目
Ａ
第３図
手続補正書
昭和５９年６月−７日
特許庁長官若杉和夫 殿
１、事件の表示
昭和５８年 特 許 願第 １８４５２１ 号２、発明
の名称
有機材料膜を剥離する方法
３、補正をする者
事件との関係 特 許 出願人
（０２９）沖電気工業株式会社
４、代理人
５、補正命令の日付 昭和 年 月 １１（自発）６、
補正の対象
７、 補正の内容
１）明細書２頁４行「ガラス」を「ガス」と訂正する。
２）同２頁５行「はガラスプラズマによる方法」を削除
する。
３）同２頁１３行「混合液は・・・・・・などに」を「
混合液は、加熱温度あるいは混合比などが」と訂正する
。
４）同４頁６行［有機材料膜ＩＡＪを「有機材料膜１」
と訂正する。
５）同４頁１３行「紫外整」を１紫外線」と訂正する。FIG. 1 is a diagram for explaining one embodiment of the method of peeling off an organic material film of the present invention, and FIGS. 2 and 3 are respective examples of other embodiments of the method of peeling off an organic material film of the present invention. This is a diagram for explaining. DESCRIPTION OF SYMBOLS 1... Organic material film, LA... Substrate, 2... Hydrogen peroxide solution, 3... Ultraviolet irradiation device, 3A... Ultraviolet rays,
4...Spray nozzle. Figure 1A Item 2A Figure 3 Procedural Amendment June-7, 1980 Kazuo Wakasugi, Commissioner of the Patent Office 1. Indication of the case 1984 Patent Application No. 184521 2. Name of the invention Organic material membrane Method of exfoliating 3, Relationship with the case of the person making the amendment Patent Applicant (029) Oki Electric Industry Co., Ltd. 4, Agent 5, Date of amendment order Month 11, Showa 11 (spontaneous) 6,
Target of amendment 7, Contents of amendment 1) "Glass" in line 4 on page 2 of the specification is corrected to "gas". 2) Delete "Method using glass plasma" on page 2, line 5. 3) Change "mixed liquid to..., etc." on page 2, line 13 to "
"The heating temperature or mixing ratio of the mixed liquid is determined by the heating temperature, mixing ratio, etc." 4) Page 4, line 6 [Refer organic material film IAJ to "organic material film 1"]
I am corrected. 5) On page 4, line 13, ``Ultraviolet adjustment'' is corrected to ``1 ultraviolet ray.''
Claims (2)
機物質の膜と接触している過酸化水素水に紫外線を照射
するかあるいは紫外線を照射した過酸化水素水を上記有
機材料膜に噴射させることを特徴とする有機材料膜を剥
離する方法。(1) Either irradiating the hydrogen peroxide solution that is in contact with the film of one or more types of organic substances attached to the substrate with ultraviolet rays, or applying the hydrogen peroxide solution that has been irradiated with ultraviolet rays onto the organic material film. A method for peeling off an organic material film, the method comprising spraying.
材料膜と接触している過酸化水素水に紫外線を照射した
後加熱した硫酸またはこの硫酸と上記過酸化水素水を交
互に上記有機材料に接触させることを特徴とする有機材
料膜を剥離する方法。(2) Sulfuric acid heated after irradiating ultraviolet rays to the hydrogen peroxide solution that is in contact with one or more types of organic material films adhered to the substrate, or alternately applying this sulfuric acid and the hydrogen peroxide solution to the organic material. A method for peeling an organic material film, the method comprising: bringing the organic material film into contact with the organic material film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18452183A JPS6077430A (en) | 1983-10-04 | 1983-10-04 | Separating method of organic material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18452183A JPS6077430A (en) | 1983-10-04 | 1983-10-04 | Separating method of organic material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6077430A true JPS6077430A (en) | 1985-05-02 |
Family
ID=16154652
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18452183A Pending JPS6077430A (en) | 1983-10-04 | 1983-10-04 | Separating method of organic material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6077430A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6384029A (en) * | 1986-09-27 | 1988-04-14 | Tokyo Electron Ltd | Washing apparatus |
| JPS6384119A (en) * | 1986-09-29 | 1988-04-14 | Tokyo Electron Ltd | Cleaning of substrate |
| JPH02102529A (en) * | 1988-10-12 | 1990-04-16 | Matsushita Electron Corp | Mask cleaning process |
| JPH0475132U (en) * | 1990-11-08 | 1992-06-30 | ||
| US5695569A (en) * | 1991-02-28 | 1997-12-09 | Texas Instruments Incorporated | Removal of metal contamination |
| US5695570A (en) * | 1991-02-28 | 1997-12-09 | Texas Instruments Incorporated | Method for the photo-stimulated removal of trace metals from a semiconductor surface |
| CN1097851C (en) * | 1995-05-31 | 2003-01-01 | 日本电气株式会社 | Method for forming capacitor in memory cell in dynamic random access memory device |
| JP2022515349A (en) * | 2018-12-14 | 2022-02-18 | 東京エレクトロン株式会社 | Method of reducing material roughness using irradiated etching solution |
| JP2022515350A (en) * | 2018-12-14 | 2022-02-18 | 東京エレクトロン株式会社 | Processing systems and platforms for reducing material roughness using irradiated etching solutions |
| US12112959B2 (en) | 2018-09-04 | 2024-10-08 | Tokyo Electron Limited | Processing systems and platforms for roughness reduction of materials using illuminated etch solutions |
-
1983
- 1983-10-04 JP JP18452183A patent/JPS6077430A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6384029A (en) * | 1986-09-27 | 1988-04-14 | Tokyo Electron Ltd | Washing apparatus |
| JPS6384119A (en) * | 1986-09-29 | 1988-04-14 | Tokyo Electron Ltd | Cleaning of substrate |
| JPH02102529A (en) * | 1988-10-12 | 1990-04-16 | Matsushita Electron Corp | Mask cleaning process |
| JPH0475132U (en) * | 1990-11-08 | 1992-06-30 | ||
| US5695569A (en) * | 1991-02-28 | 1997-12-09 | Texas Instruments Incorporated | Removal of metal contamination |
| US5695570A (en) * | 1991-02-28 | 1997-12-09 | Texas Instruments Incorporated | Method for the photo-stimulated removal of trace metals from a semiconductor surface |
| CN1097851C (en) * | 1995-05-31 | 2003-01-01 | 日本电气株式会社 | Method for forming capacitor in memory cell in dynamic random access memory device |
| US12112959B2 (en) | 2018-09-04 | 2024-10-08 | Tokyo Electron Limited | Processing systems and platforms for roughness reduction of materials using illuminated etch solutions |
| JP2022515349A (en) * | 2018-12-14 | 2022-02-18 | 東京エレクトロン株式会社 | Method of reducing material roughness using irradiated etching solution |
| JP2022515350A (en) * | 2018-12-14 | 2022-02-18 | 東京エレクトロン株式会社 | Processing systems and platforms for reducing material roughness using irradiated etching solutions |
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