JPS6395627A - Chemicals washing apparatus - Google Patents
Chemicals washing apparatusInfo
- Publication number
- JPS6395627A JPS6395627A JP61242338A JP24233886A JPS6395627A JP S6395627 A JPS6395627 A JP S6395627A JP 61242338 A JP61242338 A JP 61242338A JP 24233886 A JP24233886 A JP 24233886A JP S6395627 A JPS6395627 A JP S6395627A
- Authority
- JP
- Japan
- Prior art keywords
- ultraviolet rays
- chemical
- chemicals
- washing
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000126 substance Substances 0.000 title claims abstract description 50
- 238000005406 washing Methods 0.000 title abstract description 13
- 238000004140 cleaning Methods 0.000 claims description 29
- 235000012431 wafers Nutrition 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 20
- 239000010453 quartz Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000002253 acid Substances 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 3
- 239000007800 oxidant agent Substances 0.000 claims description 3
- 239000003513 alkali Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 7
- 239000010703 silicon Substances 0.000 abstract description 7
- 238000000354 decomposition reaction Methods 0.000 abstract description 5
- 230000001678 irradiating effect Effects 0.000 abstract description 4
- 230000033116 oxidation-reduction process Effects 0.000 abstract description 4
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 19
- 230000000694 effects Effects 0.000 description 12
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 8
- 239000005416 organic matter Substances 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 239000010419 fine particle Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- -1 hydrogen peroxide Chemical compound 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- 241000894006 Bacteria Species 0.000 description 1
- 241000257465 Echinoidea Species 0.000 description 1
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000008155 medical solution Substances 0.000 description 1
- 244000005700 microbiome Species 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の製造工程における半導体ウェハの
洗浄装置に係り、特に薬液による洗浄装置の改良に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a cleaning device for semiconductor wafers in the manufacturing process of semiconductor devices, and particularly relates to an improvement in a cleaning device using a chemical solution.
半導体装置の製造工程において半導体ウェハ表面の清浄
化技術はＬＳＩ等加工技術の微細化に伴って、ｔすまず
重要な技術となっている。即ちＩＣを形成するパターン
の幅が広い時には半導体表面に耐着する微粒子等の影響
は無視出来たが、ＬＳＩ等高集積化が進んでパターンの
幅が狭くなると０．１μｍ程度の微粒子の影響も無視出
来なくなる０
従来の薬液洗浄装置は第３図に示すように薬液槽１内に
半導体ウェハ３を硫酸や塩酸のような薬液２を洗浄に適
した温度に調節して浸漬し、半導体クエへ３０表面の汚
れを除去するものでおる。BACKGROUND ART In the manufacturing process of semiconductor devices, cleaning technology for the surface of semiconductor wafers has become an extremely important technology as processing technology for LSIs and the like becomes finer. In other words, when the width of the pattern forming an IC was wide, the influence of fine particles adhering to the semiconductor surface could be ignored, but as the pattern width became narrower as the integration of LSIs progressed, the influence of fine particles of about 0.1 μm increased. 0 As shown in Fig. 3, conventional chemical cleaning equipment immerses a semiconductor wafer 3 in a chemical bath 1 in a chemical liquid 2 such as sulfuric acid or hydrochloric acid at an appropriate temperature for cleaning, and then transfers the semiconductor wafer to a semiconductor wafer. 30 Use something to remove dirt from the surface.
半導体ウェハの汚れとは主にパターニング後ウェハの表
面に付着しているレジストのかけら、空気中の微生物、
バクテリアなどの微粒子であって。Semiconductor wafer contamination is mainly caused by resist fragments attached to the wafer surface after patterning, microorganisms in the air,
They are fine particles such as bacteria.
これらは通常塩酸、硫酸、７ツ酸などの酸類、アンモニ
アなどのアルカリ、または過酸化水素水などの酸化剤を
適宜組合せた薬液２に浸されて洗浄後、さらに微粒子、
比抵抗等が高度に管理された超高純水中で水洗されるこ
とによシ除去されている。These are usually immersed in a chemical solution 2 containing an appropriate combination of acids such as hydrochloric acid, sulfuric acid, and hetoxic acid, alkalis such as ammonia, or oxidizing agents such as hydrogen peroxide, and then washed.
Specific resistance etc. are removed by washing in highly controlled ultra-high purity water.
ところが従来の方法による洗浄装置ではレジストのかけ
ら等の有機物が完全に分解出来ず、洗浄装置内で半導体
ウニ八表面に再付着してしまい。However, in the cleaning equipment using conventional methods, organic substances such as resist fragments cannot be completely decomposed, and they re-adhere to the surface of the semiconductor urchin inside the cleaning equipment.
所期の洗浄効果を発揮することが出来ないことがあった
。In some cases, the desired cleaning effect could not be achieved.
従って本発明の目的は半導体ウェハに附着した微粒子を
除去するような清浄度の高い被洗浄物に対する洗浄装置
の洗浄効果をさらに高めるための方法を提供するもので
ある。SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a method for further increasing the cleaning effect of a cleaning apparatus on highly clean objects such as removing fine particles attached to semiconductor wafers.
〔問題点を解決するための手段および作用〕本発明は石
英槽で出来た薬液槽の回シに紫外線灯等の紫外線照射装
置を設置し、紫外線を照射することによって有機物の分
解を促進させるとともに薬液の酸化還元作用を強化し洗
浄効果を高めようとするものである。[Means and effects for solving the problems] The present invention installs an ultraviolet irradiation device such as an ultraviolet lamp in the tank of a chemical solution tank made of a quartz tank, and irradiates ultraviolet rays to promote the decomposition of organic matter. The aim is to enhance the oxidation-reduction action of the chemical solution and increase the cleaning effect.
（１）第１実施例 本発明の一実施例を第１図について説明する。 (1) First example An embodiment of the present invention will be described with reference to FIG.
第１図において１は薬液槽であって、紫外線を通過する
石英製であシ、２は薬液であって９通常の塩酸、硫酸、
フッ酸などの酸類、アンモニアなどのアルカリ、または
過酸化水素水などの酸化剤を適当に組合せたものであり
、３は被洗浄物であって、ウェハキャリアに並べられた
シリコンウェハであシ、４は本発明の紫外線灯、５はふ
たを示す。In Fig. 1, 1 is a chemical solution tank made of quartz that passes ultraviolet rays, 2 is a chemical solution, and 9 is a chemical solution containing ordinary hydrochloric acid, sulfuric acid,
It is a suitable combination of acids such as hydrofluoric acid, alkalis such as ammonia, or oxidizing agents such as hydrogen peroxide, and 3 is the object to be cleaned, which is silicon wafers arranged on a wafer carrier. 4 represents the ultraviolet lamp of the present invention, and 5 represents the lid.
シリコンウェハ３は前記の洗浄用薬液２に浸漬されて洗
浄されるが、薬液槽１の周シに紫外線灯４を配置し薬液
中に未分解のまま浮遊している有機物に紫外線を照射す
ることによシ、′有機物の分解を進めるとともに薬液の
酸化還元作用をさらに強化し、洗浄効果を増す。The silicon wafer 3 is immersed in the cleaning chemical solution 2 to be cleaned. An ultraviolet lamp 4 is placed around the perimeter of the chemical bath 1 to irradiate ultraviolet light to the organic matter floating undecomposed in the chemical solution. In addition, it promotes the decomposition of organic matter and further strengthens the redox action of the chemical solution, increasing the cleaning effect.
また被洗浄物であるシリコンウェハを支持するウェハキ
ャリアも石英製にすることによシ紫外線の吸収がさらに
押えられるので洗浄効果は更に高まる。Furthermore, by making the wafer carrier that supports the silicon wafer, which is the object to be cleaned, also made of quartz, the absorption of ultraviolet rays can be further suppressed, so that the cleaning effect is further enhanced.
通常、半導体ウェハの洗浄では薬液による洗浄を行った
後、超高純水中で水洗することによってシリコンウェハ
の表面上の微粒子が除去されるが。Normally, when cleaning semiconductor wafers, fine particles on the surface of the silicon wafer are removed by cleaning with a chemical solution and then rinsing in ultra-high purity water.
本発明において薬液槽と水洗槽が一体となった一槽式の
洗浄装置の場合はその槽の周辺に紫外線灯を配置すれば
よい。二槽式の場合は水洗槽も石英または紫外線を透過
するガラス製としてその周辺に紫外線灯を配置する。水
洗槽にも紫外線を照射することによシ薬液槽から水洗槽
に移動した当初にシリコンウェハ上に残留した薬液によ
る有機物等の分解に対して必要な酸化還元作用を強化す
ることができるとともに、水洗効果を高め、水洗槽の壁
に附着した有機物等を分解し槽を清浄に保つこともでき
る。In the case of a single-tank type cleaning device in which a chemical solution tank and a washing tank are integrated in the present invention, an ultraviolet lamp may be placed around the tank. In the case of a two-tank type, the washing tank is also made of quartz or glass that transmits ultraviolet rays, and an ultraviolet lamp is placed around it. By irradiating the washing tank with ultraviolet rays, it is possible to strengthen the oxidation-reduction action necessary for decomposition of organic matter caused by the chemical solution remaining on the silicon wafer when it is first transferred from the chemical solution tank to the washing tank. It also enhances the washing effect and decomposes organic matter adhering to the walls of the washing tank, keeping the tank clean.
（２）第２実施例 本発明の他の実施例を第３図について説明する。(2) Second embodiment Another embodiment of the invention will be described with reference to FIG.
第３図は薬液槽１に循環ポンプ６とフィルター７を設け
、これを循環パイプ８で連結して循環ポンプ６によって
薬液を循環させ、フィルター７によって薬液２中に混入
した有機物等の微粒子を除去するものである。Fig. 3 shows a chemical tank 1 equipped with a circulation pump 6 and a filter 7, which are connected by a circulation pipe 8.The circulation pump 6 circulates the chemical, and the filter 7 removes particulates such as organic matter mixed into the chemical 2. It is something to do.
本実施例では循環パイプ８の一部８′を石英管として紫
外線灯４を配置し、循環パイプ８′を通過する薬液２に
紫外線を照射することによって同様の効果を得るもので
ある。本実施例では紫外線灯４を循環ポンプ６の一部に
設けるだけで所期の効果が得られ薬液槽全体を照射する
必要がない。In this embodiment, a similar effect is obtained by using a quartz tube as a part 8' of the circulation pipe 8 and arranging the ultraviolet lamp 4 to irradiate the chemical solution 2 passing through the circulation pipe 8' with ultraviolet rays. In this embodiment, the desired effect can be obtained by simply providing the ultraviolet lamp 4 in a part of the circulation pump 6, and there is no need to irradiate the entire chemical tank.
本発明による紫外線利用洗浄装置によって半導体ウェハ
を洗浄した場合の洗浄効果確認実験結果を第１表に示す
。実験は、レジスト剥離工程であって、使用薬液は硫酸
１石英槽温度１２０〜１４０℃で行われ、ロット描シの
ウェハ枚゛数は１０枚という条件で行われた。Table 1 shows the results of an experiment to confirm the cleaning effect when semiconductor wafers were cleaned using the ultraviolet cleaning apparatus according to the present invention. The experiment was a resist stripping process, and the chemical solution used was 1 sulfuric acid, 1 quartz bath, and the temperature was 120 to 140 DEG C., and the number of wafers in the lot drawing was 10.
第１表
上記実験結果から明らかなように洗浄装置、即ち薬液お
よび被洗浄物に紫外線を照射することによシ洗浄効果は
一層高められ完全な半導体ウニ八表面の清浄化が行われ
、半導体装置の製造歩留りを向上させることができた。Table 1 As is clear from the above experimental results, the cleaning effect is further enhanced by irradiating the cleaning device, that is, the chemical solution and the object to be cleaned, with ultraviolet rays, and the semiconductor surface is completely cleaned. We were able to improve the manufacturing yield.
さらに紫外線を照射することくよシ洗浄槽壁やパイプ壁
に付着する有機物が再付着できない程小さく分解できる
ため、薬液を交換した時、新しい薬液中への再汚染が防
げる。Furthermore, by irradiating ultraviolet rays, the organic matter that adheres to the cleaning tank walls and pipe walls can be broken down into small particles that cannot be reattached, which prevents re-contamination into the new chemical solution when the chemical solution is replaced.
第１図は本発明の一実施例の説明図。 第２図は本発明の他の実施例の説明図。 第３図は従来の薬液洗浄装置の説明図である。 １・・・薬液槽。 ２・・・薬液。 ３・・・半導体ウエノ・。 ４・・・紫外線灯。 ５・・・ふた。 ６・・・循環ポンプ。 ７・・・フィルター ８．８′・・・循環パイプ。 FIG. 1 is an explanatory diagram of an embodiment of the present invention. FIG. 2 is an explanatory diagram of another embodiment of the present invention. FIG. 3 is an explanatory diagram of a conventional chemical cleaning device. 1... Chemical tank. 2...Medical solution. 3...Semiconductor ueno. 4...Ultraviolet light. 5... Lid. 6...Circulation pump. 7... Filter 8.8'...Circulation pipe.
Claims (3)
とも１から成る薬液で洗浄する半導体ウェハの薬液洗浄
装置において、薬液槽に紫外線照射装置を付加したこと
を特徴とする半導体ウェハの薬液洗浄装置。(1) A semiconductor wafer chemical cleaning device for cleaning semiconductor wafers with a chemical solution consisting of at least one of acid, alkali, oxidizing agent, etc., characterized in that an ultraviolet irradiation device is added to the chemical bath. cleaning equipment.
線灯を配置したことを特徴とする特許請求の範囲第１項
記載の半導体ウェハの薬液洗浄装置。(2) The chemical solution cleaning apparatus for semiconductor wafers according to claim 1, wherein the chemical solution tank is made of quartz, and an ultraviolet lamp is arranged around the chemical solution tank.
ハの薬液洗浄装置において、循環系の一部を石英製とし
、その周囲に紫外線灯を配置したことを特徴とする特許
請求の範囲第１項記載の半導体ウェハ薬液洗浄装置。(3) In the semiconductor wafer chemical cleaning apparatus having a structure in which the chemical liquid tank circulates the chemical liquid, a part of the circulation system is made of quartz, and an ultraviolet lamp is arranged around it. A semiconductor wafer chemical cleaning apparatus as described in 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61242338A JPS6395627A (en) | 1986-10-13 | 1986-10-13 | Chemicals washing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61242338A JPS6395627A (en) | 1986-10-13 | 1986-10-13 | Chemicals washing apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6395627A true JPS6395627A (en) | 1988-04-26 |
Family
ID=17087707
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61242338A Pending JPS6395627A (en) | 1986-10-13 | 1986-10-13 | Chemicals washing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6395627A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5695570A (en) * | 1991-02-28 | 1997-12-09 | Texas Instruments Incorporated | Method for the photo-stimulated removal of trace metals from a semiconductor surface |
| US5695569A (en) * | 1991-02-28 | 1997-12-09 | Texas Instruments Incorporated | Removal of metal contamination |
| JP2003171694A (en) * | 2001-12-03 | 2003-06-20 | Mejiro Optica:Kk | Cleaning composition and cleaning method |
| JP2012212081A (en) * | 2011-03-31 | 2012-11-01 | Hoya Corp | Method for manufacturing glass substrate for mask blank, method for manufacturing mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device |
-
1986
- 1986-10-13 JP JP61242338A patent/JPS6395627A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5695570A (en) * | 1991-02-28 | 1997-12-09 | Texas Instruments Incorporated | Method for the photo-stimulated removal of trace metals from a semiconductor surface |
| US5695569A (en) * | 1991-02-28 | 1997-12-09 | Texas Instruments Incorporated | Removal of metal contamination |
| JP2003171694A (en) * | 2001-12-03 | 2003-06-20 | Mejiro Optica:Kk | Cleaning composition and cleaning method |
| JP2012212081A (en) * | 2011-03-31 | 2012-11-01 | Hoya Corp | Method for manufacturing glass substrate for mask blank, method for manufacturing mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device |
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