JPH03125428A - Semiconductor substrate cleaning apparatus - Google Patents

Abstract

PURPOSE:To generate ions without generating particles and to remove static electricity charged at a jig with the ions by emitting gas which is easily ionized by a light with a light to ionize the gas, and emitting a semiconductor substrate and the jig with the ionized gas. CONSTITUTION:A shutter 4 for introducing a Teflon jig 3 (carrier) for holding a semiconductor substrate 5 from one side of a vessel 2 into the vessel 2 is opened, and the carrier 3 including a substrate 5 is contained in the vessel 2. The vicinity of a gas inlet 8 is emitted with the light condensed by a condensing lens 7 from a xenon lamp 6. Then, gas containing gas to be easily ionized is introduced from the inlet 8. Thereafter, the gas excited by the light is ionized. The ionized gas 9 is emitted to the semiconductor substrate 5 and the carrier 3 to neutralize the charged charge. Thereafter, a shutter 10 is opened, and the carrier 3 is discharged out of the vessel 2. Accordingly, static electricity charged at the jig is removed. Thus, particles are not adhered to the substrate, and the surface of the substrate is stabilized and cleaned.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a semiconductor substrate cleaning apparatus for increasing the yield of semiconductor devices.

Conventional technology Conventional The jig that holds the semiconductor substrate is made of Teflon.
．． Particles of 1 to 2 μm adhere.

To remove static electricity, there is a method of irradiating the jig with ions generated by discharge between electrodes.

Problems to be Solved by the InventionHowever, ion irradiation due to discharge (i.e., particles are generated due to discharge between electrodes) is strong enough to remove static electricity charged on the jig, and the yield of semiconductor devices is reduced because particles generated during discharge adhere to the jig. The present invention has been made in view of this problem.
An object of the present invention is to provide a semiconductor substrate cleaning apparatus that can generate ions without generating particles and can remove static electricity charged on a jig using the ions.

Means for Solving the Problems The present invention provides a semiconductor substrate cleaning apparatus characterized by irradiating a gas that is easily ionized by light with light, ionizing the gas, and irradiating the ionized gas onto a semiconductor substrate and a jig. It is.

Function: With the above-described configuration, the present invention can irradiate the jig with ionized gas without generating particles.
In addition to removing static electricity charged on the jig, semiconductor devices with a high yield can be obtained without particles adhering to the semiconductor substrate. Further, the chemical reaction between desired ions and the semiconductor substrate surface makes it possible to stabilize and clean the substrate surface.

Embodiment FIG. 1 is a cross-sectional structural diagram of a semiconductor substrate cleaning apparatus in an embodiment of the present invention. After cleaning and drying, a container 2 is provided on the way to the electric furnace process using a carrier 1, and a Teflon jig 3 (carrier) for holding the semiconductor substrate 5 is inserted from one side of the container 2. A shutter 4 for entering the container 2 is opened, and the carrier 3 containing the substrate 5 is opened.
is stored in the container 2. The xenon lamp 6 is structured so that the light focused by the focusing lens 7 is irradiated near the Goss inlet 8. Then, a gas containing a gas that is easily ionized is introduced from the gas inlet 8. The gas excited by the light is then ionized. The ionized gas 9 is irradiated onto the semiconductor substrate 5 and the carrier 3.
The electrical charge is neutralized. Thereafter, the shutter 10 is opened, the carrier 3 is taken out of the container 2, and the carrier 3 is transported to a place where semiconductor substrates for the electric furnace process are transferred to a boat. 11
is an exhaust port. In the above structure, the inner surface of the gas inlet 8 is mirror-polished as shown in FIG. 2 to increase the reflectance of light. And make it polyhedral. Then, the light is reflected several times within the gas inlet 8, improving the ionization rate of the gas. Moreover, in the above structure, the ionized gas is highly reactive, and the organic particles adhering to the surface of the semiconductor substrate are removed by reacting with 0° and 0−. Ma? , in the case of A1 wiring, c) AI is oxidized and stable AIt is formed on the surface of the Al wiring.

3 films are formed. Furthermore, raising the temperature inside the container will accelerate the reaction. The maximum light energy of the xenon lamp 6 is 6.2 eV.As a light source, any light source that emits light with a short wavelength, such as a high-pressure mercury lamp or an excimer laser, can be used. Use a gas that is easily ionized by energy. For example,
If water vapor and oxygen are introduced, they will be ionized with the following energy. HOs・, H(H2O)m” +6.2e
V or more Oa-+0.15 to 0.9eV O-: 1.4
6eV Also, as shown in FIG. 3, the main body of the light source 6 is
It may be installed outside.

Effects of the Invention According to the present invention, by removing the charged charges, foreign matter does not adhere to the surface of the semiconductor substrate, and semiconductor devices with a high yield can be obtained. Furthermore, since foreign substances such as organic substances can be removed, semiconductor devices with a high yield can be obtained.

[Brief explanation of drawings]

Figure 1 shows the cross-sectional structure of the substrate cleaning device of the present invention. Figure 2 shows the details of the inner surface of the gas inlet of the present invention. Figure 3 is a plan view of the light source body of the present invention when installed outside the container. be. 1...Carrier 2...Container 3...Carrier 5...Semiconductor substrate 6...8...Gas introduction l 9...4.10...・Shutter, ・Light #7...Len X ・Ionized gas

Claims (2)

[Claims] (1) A light source lamp that has a structure in which a jig for holding a semiconductor substrate is inserted from one side of the container, and a structure for taking out a jig for holding the semiconductor substrate from the other side, and that emits a wavelength capable of ionizing the gas in the container. The light source has a structure in which the light source is irradiated onto the gas inlet side through a lens, and the gas entering from the gas inlet hits the semiconductor substrate and the jig. Semiconductor substrate cleaning equipment (2) The semiconductor substrate cleaning device according to claim 1, wherein the inner surface of the gas inlet has a high light reflectance and is polygonal.