JPS61125065A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS61125065A
JPS61125065A JP59245986A JP24598684A JPS61125065A JP S61125065 A JPS61125065 A JP S61125065A JP 59245986 A JP59245986 A JP 59245986A JP 24598684 A JP24598684 A JP 24598684A JP S61125065 A JPS61125065 A JP S61125065A
Authority
JP
Japan
Prior art keywords
wire
pellet
semiconductor device
bonding
coating material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59245986A
Other languages
Japanese (ja)
Inventor
Susumu Okikawa
進 沖川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59245986A priority Critical patent/JPS61125065A/en
Publication of JPS61125065A publication Critical patent/JPS61125065A/en
Pending legal-status Critical Current

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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To make it possible to prevent wire breakdown even in a semiconductor device, in which intense tensile stress is applied to wire due to temperature change accompanied by coating of a coating material having large thermal expansion coefficient, by providing electric connection of a pellet and an external terminal by the wire comprising high purity copper. CONSTITUTION:A package is molded under the state the inside is sealed by epoxy resin 1. A pellet 4 is attached to the approximately central part of the upper surface of a tab 2, which is a pellet attaching part, through gold-silicon eutectic 3. The pellet 4 is electrically conducted by ball-bonding a copper wire 6 to a bonding pad 5 comprising aluminum and also by ball-bonding the other end to the inner side part of a lead 7, which is an external terminal. The upper surface of the pellet 4 is coated by silicon gel, which is a coating material 8, in order to protect the bonding pad from corrosion and the like after wire bonding.

Description

【発明の詳細な説明】 〔技術分野〕 ′本発明は、ペレットと外部端子との電気的接続に関し
、半導体装置の（δ頼性向上に適用して有効な技術に関
するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to an electrical connection between a pellet and an external terminal, and relates to a technique that is effective when applied to improving the (δ reliability) of a semiconductor device.

〔背景技術］ ＭＩ４１ＩＩ封止型半導体Ｍｌｅにおいては、現今のペ
レットの高＃Ｉａ化に伴うペレットの大型化ならびに高
密度実装の要請によるパッケージの小型化および薄型化
により、半導体装置の耐湿性等に問題が生じることが多
い、その対策の一つとして、ペレット表面にコーティン
グ材を被覆してアルミニウムで形成されているポンディ
ングパッドの腐食防止等が行われている。[Background technology] In the MI41II sealed semiconductor Mle, the moisture resistance of semiconductor devices has improved due to the increase in pellet size due to the current high #Ia of pellets and the miniaturization and thinning of packages due to the demand for high-density packaging. Problems often occur, and one countermeasure is to coat the pellet surface with a coating material to prevent corrosion of the aluminum bonding pad.

前記腐食防止が施された半導体装置は、リードフレーム
のタブへの取付が完了したペレットについてたとえば金
ワイヤでポンディングパッドと外部端子とを電気的に接
続した後、コーティング材として、たとえばシリコーン
ゲルをポツティングでペレット表面に被覆し、その後は
通常の樹脂モールド等の製造工程により製造することが
できるものである。The corrosion-protected semiconductor device is manufactured by applying, for example, silicone gel as a coating material to the pellet after it has been attached to the lead frame tab, after electrically connecting the bonding pad and the external terminal with, for example, gold wire. It can be coated onto the pellet surface by potting, and then manufactured by ordinary manufacturing processes such as resin molding.

したがって、前記金ワイヤはペレット表面に近い部分で
シリコーンゲルに接触し、その先でパッケージ形成樹脂
、たとえばエボキン樹脂と接触することになる。ここで
、ノリコーンゲルは変形し易くかつ軟らかい材質である
が熱膨張率が大きいという性質を有し、一方、エボキソ
樹脂は逆に変形し難くかつ固いもので、２さ膨張率はそ
れ程大きくないものである。Therefore, the gold wire comes into contact with the silicone gel at a portion close to the pellet surface, and then comes into contact with the package forming resin, such as Evoquin resin, at the tip thereof. Noricone gel is a soft material that is easily deformed, but has a high coefficient of thermal expansion, whereas epoxy resin is difficult to deform and is hard, and its coefficient of thermal expansion is not so large. be.

したがって、半導体装置が温度変化を受ける場合は、シ
リコーンゲルの体積変化により大きな影響を受けること
になる。たとえば温度が上昇する場合は、シリコーンゲ
ルの熱膨張によりエボキソ樹脂が持ち上げられることに
なるが、その際該エボキン樹脂に強く固定されている金
ワイヤが引っ張られて強い応力を受けることになる。そ
のため、昇温冷却の温度変化（温度サイクル）を繰り返
し受けることにより、ボールボンディングを行った場合
のボールの近傍で金ワイヤの切断が起こり易いことが本
発明者により見い出された。Therefore, when a semiconductor device is subjected to a temperature change, it is greatly affected by a change in the volume of the silicone gel. For example, when the temperature rises, the Evoxo resin will be lifted due to the thermal expansion of the silicone gel, and at this time, the gold wire that is strongly fixed to the Evoxo resin will be pulled and subjected to strong stress. Therefore, the inventors have found that the gold wire is likely to break near the ball when ball bonding is performed by repeatedly undergoing temperature changes (temperature cycles) of heating and cooling.

このようなワイヤの疲労断線は、前記ノリコーンゲルの
ｌｉｉ　ｎ２を極めて薄＜、たとえばワイヤのボンディ
ング部であるボール部の高さより薄くすることができれ
ばそれ程大きな問題にならないと考えられるが、薄くか
つ正確にシリコーンゲルを被覆することは技術的に困ｔ
ｔである。Such fatigue disconnection of the wire would not be such a big problem if the lii n2 of the Noricone gel could be made extremely thin, for example, thinner than the height of the ball part which is the bonding part of the wire. It is technically difficult to coat with silicone gel.
It is t.

なお、ペレットがコーティング材で被覆されてなる半導
体装置については、特公昭５０−１９３９６号に記載さ
れている。Note that a semiconductor device in which a pellet is coated with a coating material is described in Japanese Patent Publication No. 19396/1983.

（発明の目的〕 本発明の目的は、ペレットと外部端子との電気的接続に
関し、半導体装置の信頼性向上に適用して有効な技術に
関するものである。(Object of the Invention) An object of the present invention is to relate to a technique that is effective when applied to improve the reliability of a semiconductor device regarding electrical connection between a pellet and an external terminal.

本発明の前記ならびにその他の目的と新規な特徴は、本
明細書の記述および添付図面から明らかになるであろう
。The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

〔発明の概要〕[Summary of the invention]

本願において開示される発明のうち代表的なものの概要
をＮ単に説明すれば、次の通りである。A brief summary of typical inventions disclosed in this application is as follows.

すなわち、ペレットがコーティング材で被覆されてなる
樹脂封止型半導体装置について、ペレットと外部端子と
の電気的接続を高純度の銅ワイヤで行うことにより、引
張強度、破断伸びおよび疲′ｙ！強度が大きい銅の性質
を利用することができることより、熱膨張率が大きなコ
ーティング材が被覆されているため温度変化によりワイ
ヤに強い引張応力が加わる前記半導体装置であっても、
ワイヤの切断を防止できるものであり、前記目的が達成
されるものである。That is, for a resin-sealed semiconductor device in which a pellet is covered with a coating material, electrical connection between the pellet and external terminal is made using a high-purity copper wire, thereby improving tensile strength, elongation at break, and fatigue! By being able to utilize the properties of copper, which has high strength, even in the semiconductor device described above, which is coated with a coating material having a high coefficient of thermal expansion, strong tensile stress is applied to the wire due to temperature changes.
The wire can be prevented from being cut, and the above object can be achieved.

〔実施例１〕 第１図は、本発明による実施例１である半導体装置を、
そのほぼ中心を切る面における断面図で示すものである
。[Example 1] FIG. 1 shows a semiconductor device according to Example 1 of the present invention.
This is a cross-sectional view taken along a plane cut approximately at the center.

本実施例１の半導体装置は、いわゆるＤＩＰ型の樹脂封
止型半導体′ＡＮである。パッケージはエボキソ樹脂ｌ
で内部を封止する状ＩＬｉでモールド形成され、該パッ
ケージのほぼ中央部にはペレット取付部であるタブ２の
上面に金−シリコン共晶３を介してペレット４が取り付
けられている。The semiconductor device of the first embodiment is a so-called DIP type resin-sealed semiconductor 'AN. The package is made of epoxy resin.
A pellet 4 is attached via a gold-silicon eutectic 3 to the upper surface of a tab 2 which is a pellet attaching portion at approximately the center of the package.

前記ペレット４は°ｒルミニウムからなるポンディング
パッド５に銅ツイヤ６をポールボンディングし、他端を
外部端子であるリード７の内端部にボンディングするこ
とにより、電気的に導通されている。そして、このペレ
ット４の上面は、ワイヤボンディング後にポンディング
パッドを腐食等から保護するために、コーティング材８
であるシリコーンゲルで被覆されている。このシリコー
ンゲルの被覆は、通常のポツティング技術で行いうるち
のである。The pellet 4 is made electrically conductive by pole-bonding a copper wire 6 to a bonding pad 5 made of aluminum and bonding the other end to the inner end of a lead 7, which is an external terminal. The upper surface of this pellet 4 is coated with a coating material 8 to protect the bonding pad from corrosion etc. after wire bonding.
It is coated with silicone gel. The silicone gel coating can be applied using conventional potting techniques.

本実施例１の半導体装置の特徴は、前記の如くペレット
４とり一部７との電気的接続を銅ワイヤ、それも通常の
技術でいわゆるポールボンディングが可能である高純度
の銅で形成されてなる銅ワイヤを用いて行っていること
にある。The feature of the semiconductor device of the first embodiment is that, as described above, the electrical connection between the pellet 4 and the part 7 is made of copper wire, which is made of high-purity copper that allows so-called pole bonding using ordinary techniques. This is done using copper wire.

本実施例１の半導体装置の如く、熱膨張率の大きなシリ
コーンゲルがペレットに被覆されているため、温度変化
に伴いワイヤに大きな引張応力が加わるものであっても
、前記の如（高純度の銅製のワイヤを用いることにより
、銅の存する引張強度、破断強度および疲プを強度に優
れた性質を利用できることより、前記半導体装置の信頼
性向上を容易に達成できるものである。As in the semiconductor device of Example 1, the pellets are coated with silicone gel having a large coefficient of thermal expansion, so even if large tensile stress is applied to the wire due to temperature changes, By using a wire made of copper, the reliability of the semiconductor device can be easily improved because copper's excellent properties in tensile strength, breaking strength, and fatigue strength can be utilized.

なお、＋ｉｌ記鋼ワイ“１ｔのｆａれた性ｎは、たとえ
ば直径２５μｍ、９９゜９９重量％の銅ワイヤの場合は
１．常温より５００℃の範囲において、同径の金ワイ・
１ｔに比べ引張強度が約２倍以上であり、破断伸びが約
１．５倍以上であったごとによっても示される。Note that the fading property n of steel wire "1t" is, for example, 1 for a copper wire of 25 μm in diameter and 99°99% by weight.
It is also shown that the tensile strength is about twice or more and the elongation at break is about 1.5 times or more compared to 1t.

また、ペレッＦのボンディングパノドへワイヤをボンデ
ィングした後、該ワイヤに所定の振幅で変位を起こさせ
ることを繰り返し、切断に到らしめる試験を行った結果
を示すのが第２図であるが、これによっても銅ワイヤの
特長が示されている。Figure 2 shows the results of a test in which the wire was bonded to the bonding panod of Pellet F, and then the wire was repeatedly displaced at a predetermined amplitude until it broke. , which also shows the advantages of copper wire.

′：Ａ２図において、縦軸は振幅〔δ］を示し、横軸は
繰り返し数（Ｎｌを示し、両軸とも対数で表示されてい
る０図中０）は本実施例に適用されている純度９９．９
９ｍｍ％の銅ワイヤ、（２）は金ワイヤ、（３）は参考
のために示したアルミニウムワイヤを用いた場合の結果
を示すものである。': In figure A2, the vertical axis shows the amplitude [δ], and the horizontal axis shows the number of repetitions (Nl, both axes are expressed logarithmically. 0 in the figure) is the purity applied to this example. 99.9
The results are shown using a 9 mm% copper wire, (2) a gold wire, and (3) an aluminum wire shown for reference.

さらに、完成した本実施例１の半導体装置と金ワイヤで
ボンディングされている半導体装置について、−５５℃
〜！５０℃の温度サイクルを行った場合の結果は、８０
％の後者が断線した段階においても、前者においては全
く断線が認められなかった。この事実によっても本実施
例１の半導体装置について信頼性の高さが示されている
。Furthermore, the semiconductor device bonded with the completed semiconductor device of Example 1 and the gold wire was heated at -55°C.
~! The result when performing a temperature cycle at 50°C is 80°C.
%, even at the stage where the latter was broken, no breakage was observed in the former. This fact also shows that the semiconductor device of Example 1 has high reliability.

〔実施例２〕 本発明による実施例２である半導体装置は、はぼ前記実
施例１に示したものと同一のものであるが、ペレットと
外部端子との電気的接続に用いられるワイヤが、第３図
に横断面図で示すように銅ワイヤ６の表面に絶縁材であ
る酸化銅Ｎ６ａが被着されてなるワイヤであることにそ
の特徴があるものである。[Example 2] A semiconductor device according to Example 2 of the present invention is essentially the same as that shown in Example 1 above, except that the wire used for electrical connection between the pellet and the external terminal is As shown in the cross-sectional view in FIG. 3, the wire is characterized by having copper oxide N6a, which is an insulating material, coated on the surface of a copper wire 6.

このように銅ワイヤ６に絶縁処理を施すことにより、ｌ
；ｆ記実施例Ｉの半導体装置の効果に加えて、リード間
等の接触によるシロートを防止することが可能となる。By insulating the copper wire 6 in this way, l
f In addition to the effects of the semiconductor device of Example I, it is possible to prevent erosion caused by contact between leads, etc.

前記のワイヤ表面の酸化ｔＲｒｍｅａは、銅ワイヤを酸
化雰囲気で処理するか、酸化浴に浸漬して所定の処理を
行うことにより形成することができる。The oxidation tRrmea on the wire surface can be formed by treating the copper wire in an oxidizing atmosphere or by immersing it in an oxidizing bath and performing a predetermined treatment.

〔効果〕〔effect〕

（ｌ）、ペレットがコーティング材で被覆されてなる樹
脂封止型半導体装置について、ペレ７）と外部端子との
電気的接続を高純度の銅ワイヤで行うことにより、銅の
優れた引張強度、疲労強度および破断伸びの特長を利用
できるので、前記コーティング材の熱膨張率が大きいた
めに温度変化を受ける際ワイヤに強い引張応力が生じる
場合であっても、ワイヤの切断の発生を防止でき、半導
体装置の信頼性向上を達成できる。(l) Regarding the resin-sealed semiconductor device in which the pellet is covered with a coating material, the electrical connection between the pellet 7) and the external terminal is made using a high-purity copper wire, thereby achieving the excellent tensile strength of copper. Since the characteristics of fatigue strength and elongation at break can be utilized, it is possible to prevent the occurrence of wire breakage even if strong tensile stress is generated in the wire when subjected to temperature changes due to the large coefficient of thermal expansion of the coating material, It is possible to improve the reliability of semiconductor devices.

（２）、高純度、たとえば９９．９９重量％以上の銅ワ
イヤを用いることにより、ポールボンディングが可能と
なるので、通常のボンディング技術を利用して半導体装
置を製造できる。(2) Pole bonding is possible by using a high purity copper wire, for example, 99.99% by weight or higher, so that semiconductor devices can be manufactured using normal bonding techniques.

＋３１．ｗ４ワイヤの表面に絶縁材を被覆することによ
り、リード間等の接触によるシジートを防止することが
できる。+31. By coating the surface of the w4 wire with an insulating material, it is possible to prevent syjitsu due to contact between leads, etc.

（４）、絶縁材が酸化銅である場合、銅ワイヤの表面を
直接酸化して形成できるので、製造が容易である。(4) When the insulating material is copper oxide, it can be formed by directly oxidizing the surface of the copper wire, so manufacturing is easy.

以」一本発明者によってなされた発明を実施例に基づき
具体的に説明したが、本発明は前記実施例に限定される
ものではなく、その要旨を逸脱しない範囲で種々変更可
能であることはいうまでもない。Hereinafter, the invention made by the present inventor has been specifically explained based on examples, but the present invention is not limited to the above-mentioned examples, and it is understood that various changes can be made without departing from the gist of the invention. Needless to say.

たとえば、コーティング材としてシリコーンゲルを用い
たものについて説明したがこれに限るものでなく、同様
の目的に使用し得るものであれば、イミドシリコーン、
ポリイミド樹脂等如何なるものであってもよい。For example, although silicone gel is used as the coating material, the coating material is not limited to this.If it can be used for the same purpose, imido silicone,
Any material such as polyimide resin may be used.

また、ワイヤの絶縁材として酸化鋼のみを取り上げたが
、樹脂等の通常使用される絶縁材料を被覆するものであ
ってもよいことは言うまでもない。Further, although only oxidized steel is used as the insulating material for the wire, it goes without saying that it may be coated with a commonly used insulating material such as resin.

〔利用分野〕[Application field]

単玉の説明では主として本発明者によってなされた発明
をその背景となった利用分野である、いわゆるＤｌｒ’
型の半導体装置に適用した場合について説明したが、そ
れに限定されるものではなく、たとえば、いわゆるフラ
ットパフケージ型等の樹脂封止型半導体装置であれば如
何なるものにも適用して有効な技術である。In the explanation of the single ball, we will mainly focus on the invention made by the present inventor and the field of application behind it, the so-called Dlr'
Although the description has been made of the case where the present invention is applied to a type of semiconductor device, the present invention is not limited thereto, and is an effective technique that can be applied to any type of resin-sealed semiconductor device, such as a so-called flat puff cage type. be.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は、本発明による実施例１である半導体装置を示
す断面図、 第２図は、ワイヤに一定の振幅で変位を与えた場合のワ
イヤの疲労強度を、その回数で示した両対数グラフ、 第３図は、本発明による実施例２である半導体装置に適
用されたワイヤを示す断面図である。 １・・・樹脂、２・・・タブ、３・・・金−シリコン共
晶、４・・・ペレット、５・・・ボンディングパッド、
６・・・銅ワイヤ、６ａ・・・酸化銅膜、７　・・リー
ド、８・・・コーティング材。 第　　２　　図 ま−１ｍしり゛〔Ａ／） 第　　３　　図FIG. 1 is a cross-sectional view showing a semiconductor device according to a first embodiment of the present invention. FIG. 2 is a logarithm of the fatigue strength of a wire when a displacement is applied to the wire with a constant amplitude, expressed by the number of displacements. The graph and FIG. 3 are cross-sectional views showing wires applied to a semiconductor device according to a second embodiment of the present invention. 1... Resin, 2... Tab, 3... Gold-silicon eutectic, 4... Pellet, 5... Bonding pad,
6... Copper wire, 6a... Copper oxide film, 7... Lead, 8... Coating material. Fig. 2 -1m length [A/] Fig. 3

Claims (1)

【特許請求の範囲】 １、ペレットがコーティング材で被覆されてなる樹脂封
止型半導体装置について、ペレットと外部端子との電気
的接続を高純度の銅ワイヤで行った半導体装置。 ２、銅ワイヤが、９９．９９重量％以上の純度で形成さ
れていることを特徴とする特許請求の範囲第１項記載の
半導体装置。 ３、銅ワイヤが絶縁材で被覆されていることを特徴とす
る特許請求の範囲第１項記載の半導体装置。 ４、絶縁材が酸化銅からなることを特徴とする特許請求
の範囲第３項記載の半導体装置。 ５、コーティング材がシリコーン系材料であることを特
徴とする特許請求の範囲第１項記載の半導体装置。[Claims] 1. A resin-sealed semiconductor device in which a pellet is coated with a coating material, and the pellet and an external terminal are electrically connected using a high-purity copper wire. 2. The semiconductor device according to claim 1, wherein the copper wire is formed with a purity of 99.99% by weight or more. 3. The semiconductor device according to claim 1, wherein the copper wire is coated with an insulating material. 4. The semiconductor device according to claim 3, wherein the insulating material is made of copper oxide. 5. The semiconductor device according to claim 1, wherein the coating material is a silicone-based material.
JP59245986A 1984-11-22 1984-11-22 Semiconductor device Pending JPS61125065A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59245986A JPS61125065A (en) 1984-11-22 1984-11-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59245986A JPS61125065A (en) 1984-11-22 1984-11-22 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS61125065A true JPS61125065A (en) 1986-06-12

Family

ID=17141770

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59245986A Pending JPS61125065A (en) 1984-11-22 1984-11-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS61125065A (en)

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