JPS6289347A - Copper wire for bonding and electronic device using the wire - Google Patents

Copper wire for bonding and electronic device using the wire

Info

Publication number
JPS6289347A
JPS6289347A JP60228653A JP22865385A JPS6289347A JP S6289347 A JPS6289347 A JP S6289347A JP 60228653 A JP60228653 A JP 60228653A JP 22865385 A JP22865385 A JP 22865385A JP S6289347 A JPS6289347 A JP S6289347A
Authority
JP
Japan
Prior art keywords
bonding
copper wire
resistance ratio
residual resistance
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60228653A
Other languages
Japanese (ja)
Inventor
Susumu Okikawa
進 沖川
Hiroshi Mikino
三木野　博
Hiromichi Suzuki
博通 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP60228653A priority Critical patent/JPS6289347A/en
Publication of JPS6289347A publication Critical patent/JPS6289347A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/4805—Shape
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85053—Bonding environment
    • H01L2224/85054—Composition of the atmosphere
    • H01L2224/85075—Composition of the atmosphere being inert
    • H—ELECTRICITY
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    • H01L2924/01005—Boron [B]
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    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
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    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To obtain an electronic device having no element damage and a mechanically sufficient strength by a method wherein copper wires for bonding are constituted in such a way that the residual resistance ratio thereof becomes 800 or more and an element chip is electrically connected to the external lead using the copper wires. CONSTITUTION:An element chip 3 is fixed on a tab 2 of a lead frame 1 and a package is constituted by sealing wire a resin 4. Bonding pads 5 of the chip 3 are connected to external lead-out leads 6 of the lead frame 1 with copper wires 7. As the copper wires 7, ones having a residual resistance ratio of 800 or more, desirably ones having a residual resistance ratio of 2,500 or more, are used. The residual resistance ratio is the ratio of resistivity at the absolute temperatures of 293 degrees and 4.2 degrees and has an interrelation with the purity of copper, but the value is varied even by elements other than the purity due to diferencs between components being included slightly in the copper. As being known from a diagram (a) showing a relation between the residual resistance ratio obtained from experiments and the element damage which received using the copper wires, the residual resistance ratio (RRR) (b) is reoughly 800 or more and the damage is reduced into several % or less.

Description

【発明の詳細な説明】 〔技術分野〕 本発明は半導体装置で代表される電子装置の素子チップ
と外部リードとを電気接続するだめのボンディング用銅
線及びこのボンディング用銅線を用いた電子装置に関す
るものである。[Detailed Description of the Invention] [Technical Field] The present invention relates to a bonding copper wire for electrically connecting an element chip and an external lead of an electronic device, typically a semiconductor device, and an electronic device using this bonding copper wire. It is related to.

〔従来の技術〕[Conventional technology]

電子装置、特に半導体装置の素子チップと外部リードと
を接続する金属細線として従来金線が使用されているが
、高価であること及びポンディングパッドとしてのアル
ミニウムと金属間化合物を生成すること等から、これに
代わる線材が検討されている。この一つにアルミニウム
線を使用することが従案されているが、酸化し易く耐湿
性に問題がある。Gold wire has conventionally been used as a thin metal wire to connect the element chip and external leads of electronic devices, especially semiconductor devices, but gold wire is expensive and generates intermetallic compounds with aluminum as a bonding pad. , wire rods to replace this are being considered. Although it has been proposed to use aluminum wire as one of these wires, it is easily oxidized and has problems in moisture resistance.

このため、銅線を使用する試みがなされており、例えば
Ｓｅｍ１ｃｏｎｄｕｃｔｏｒ　Ｉｎｔｅｒｎａｔｉｏｎ
ａｌ　　（セミコンダクター　インターナショナル）　
１９８２年８月号にＢａ１ｌ　Ｂａｎｄｉｎｇ　ｏｆ　
Ｎｏｎｐｒｅｃｉｏｕｓ　Ｍｅｔａｌ　Ｗｉｒｅｓ　　
（ボールボンディング　オブ　ノンプレジャス　メタル
　ワイヤズ）として発表されている。For this reason, attempts have been made to use copper wire, for example Sem1conductor International
al (Semiconductor International)
Ba1l Banding of August 1982 issue
Nonprecious Metal Wires
(Ball Bonding of Non-Pleasure Metal Wires).

そこで、本発明者がこの銅線をボンディングに適用する
ことについて検討したところ、引っ張り強度等の機械的
な強度の点では十分満足ができるものの、ボンディング
時に素子チップにクラック等のダメージを与えることが
多く信軌性に欠けるという問題のあることが判明した。Therefore, the present inventor investigated the application of this copper wire for bonding, and found that although it is sufficiently satisfactory in terms of mechanical strength such as tensile strength, it may cause damage such as cracks to the element chip during bonding. It was found that there were many problems with lack of reliability.

即ち、銅線のポールは一般に硬いため、ボールボンディ
ング時にボンディング面直下のシリコンにクラックが発
生し、このクラックにより素子や配線が破損される。That is, since copper wire poles are generally hard, cracks occur in the silicon directly under the bonding surface during ball bonding, and the cracks damage the elements and wiring.

このダメージを防止するためには銅線の純度を上げる等
して伸び率を増大することが考えられるが、単に純度を
上げるのみではボンディングループ形状が不安定になる
とともに引っ張り強度等の機械的強度の低下を招くと言
う問題が生ずる。また、現在供給されている銅線の純度
は４Ｎ（ナイン）つまり９９．９９ＷＴ％程度であるが
、これ以上の純度は分析を行うことは極めて困難であり
、純度で銅線を管理することは実際上不可能に近い。更
に、現在までのところ伸び率が１５％以上の銅線は得ら
れておらず、ダメージを低減する目的でこれ以上の伸び
率の銅線を得ることは現状では不可能である。In order to prevent this damage, it is possible to increase the elongation rate by increasing the purity of the copper wire, but simply increasing the purity will make the bonding loop shape unstable and reduce the mechanical strength such as tensile strength. A problem arises in that it causes a decrease in In addition, the purity of the copper wire currently supplied is around 4N (nine) or 99.99 WT%, but it is extremely difficult to analyze purity higher than this, and it is impossible to manage copper wire by purity. Almost impossible in practice. Furthermore, to date, no copper wire has been obtained with an elongation rate of 15% or more, and it is currently impossible to obtain a copper wire with a higher elongation rate for the purpose of reducing damage.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、素子チップにダメージを与えることが
ない一方で、半導体装置に必要かつ十分な機械的強度を
保持させることのできるボンディング用銅線を提供する
ことにある。An object of the present invention is to provide a copper wire for bonding that can maintain sufficient mechanical strength necessary for a semiconductor device while not damaging an element chip.

また、本発明の他の目的は素子チップにおけるクランク
が生じることがなく、しかも信転性の高い状態で銅線に
よる素子チップと外部リードとの電気的接続を可能とし
た電子装置を提供することにある。Another object of the present invention is to provide an electronic device that does not cause cranking in the element chip and enables electrical connection between the element chip and external leads using copper wires with high reliability. It is in.

本発明の前記ならびにそのほかの目的と新規な特徴は、
本明細書の記述および添付図面からあきらかになるであ
ろう。The above and other objects and novel features of the present invention include:
It will become clear from the description of this specification and the accompanying drawings.

〔発明の概要〕[Summary of the invention]

本願において開示される発明のうち代表的なものの概要
を簡単に説明すれば、下記のとおりである。A brief overview of typical inventions disclosed in this application is as follows.

すなわち、ボンディング用銅線の残留抵抗比が８００以
上となるように、更に好ましくは２５００以上となるよ
うに構成することにより、素子チップにおけるダメージ
の低減乃至防止を図るものである。That is, by configuring the bonding copper wire so that the residual resistance ratio is 800 or more, more preferably 2500 or more, damage to the element chip is reduced or prevented.

また、残留抵抗比が８００以上の銅線を用いて素子チッ
プと外部リードとを電気的に接続して電子装置を構成す
ることにより、素子ダメージがなくしかも機械的に十分
な強度の電子装置を得ることができる。In addition, by configuring an electronic device by electrically connecting the element chip and external leads using copper wire with a residual resistance ratio of 800 or more, it is possible to create an electronic device that is free from element damage and has sufficient mechanical strength. Obtainable.

〔実施例〕〔Example〕

第１図は本発明を適用した半導体装置の概略断面構成図
であり、リードフレーム１のタブ２上にシリコン素子チ
ップ３を固着し、これをレジン４により封止してパッケ
ージを構成している。前記素子チップ３のポンディング
パッド５は、リードフレーム１の外部導出用リード６に
銅線７を用いて電気的に接続している。この銅線７は、
周知のボールボンディング法、つまり熱圧着法と超音波
法の併用によって前記ポンディングパッド５及び外部導
出用リード６に夫々接続している。FIG. 1 is a schematic cross-sectional configuration diagram of a semiconductor device to which the present invention is applied. A silicon element chip 3 is fixed onto a tab 2 of a lead frame 1, and this is sealed with a resin 4 to form a package. . The bonding pads 5 of the element chip 3 are electrically connected to external leads 6 of the lead frame 1 using copper wires 7. This copper wire 7 is
It is connected to the bonding pad 5 and the external lead 6 by a well-known ball bonding method, that is, a combination of a thermocompression bonding method and an ultrasonic method.

前記銅線７のボンディングに際しては、第２図のように
ボンディングツールとしてのキャピラリ１２に対向して
放電電極１３を配置し、一部開口した筒状のシールド１
４でこの放電電極１３を覆い、このシールド１４内に水
素及びアルゴン等のガスを供給可能なワイヤポンダ１１
を使用する。When bonding the copper wire 7, as shown in FIG.
4 covers this discharge electrode 13 and is capable of supplying gas such as hydrogen and argon into this shield 14.
use.

そして、銅線７の先端をこのシールド１４内に位置させ
た上で、水素及びアルゴンのガス雰囲気下でキャピラリ
１２と放電電極１３間に高電圧を印加しこの放電エネル
ギによって銅線７の先端を溶融させ、自身の表面張力に
よって銅ポールを形成させる。以下、この銅ボールをポ
ンディングパツド５に熱圧着と超音波法の併用でボンデ
ィングを行うこと、及びその後の工程は金線の場合と同
じである。Then, with the tip of the copper wire 7 positioned within this shield 14, a high voltage is applied between the capillary 12 and the discharge electrode 13 in a hydrogen and argon gas atmosphere, and the tip of the copper wire 7 is moved by this discharge energy. It melts and forms a copper pole due to its own surface tension. Hereinafter, this copper ball is bonded to the bonding pad 5 by a combination of thermocompression bonding and ultrasonic method, and the subsequent steps are the same as in the case of gold wire.

前記鋼＆に１７ば、ここでは残留抵抗比が８００以上の
ものを使用しており、好ましくは２５００以上のものを
用いている。残留抵抗比は、ＲＲＲ（Ｒｅ５ｉｄｕａｌ
　Ｒｅ５ｉｓｔａｎｃｅ　Ｒａｔｉｏ）と称され、次式
によって表される。Regarding the above-mentioned steel, a material having a residual resistance ratio of 800 or more is used, preferably 2,500 or more. The residual resistance ratio is RRR (Re5idual
It is called Re5istance Ratio) and is expressed by the following formula.

ＲＲＲ−ρｚｑｙ　　６に／ρ４，２’に即ち、絶対温
度２９３度及び４．２度における比抵抗の比である。こ
の残留抵抗比は、銅の純度と相関を有しているが、胴中
に僅かに含まれる成分の相違によって純度以外の要素に
よっても値が変化される。RRR-ρzqy 6/ρ4,2', that is, the ratio of specific resistance at absolute temperatures of 293 degrees and 4.2 degrees. This residual resistance ratio has a correlation with the purity of copper, but its value also changes depending on factors other than purity due to slight differences in the components contained in the shell.

第３図に本発明者による実験から得られた残留抵抗比と
、その銅線を用いた場合の素子ダメージとの関係を示す
。これから判るように、残留抵抗比の増大に伴ってダメ
ージの割合が急激に低下しており、残留抵抗比が略８０
０以上でダメージが数％以下になる。ダメージ割合を零
に近くするためには残留抵抗比を２５００以上にすれば
よい。本発明者の実験によれば、前記残留抵抗比８００
は純度に換算すると略５Ｎ、即ち９９．９９９ｗｔ％に
相当し、２５００は略６Ｎ、即ち９９．９９９９ｗｔ％
に相当していることが判明した。但し、前述のように５
Ｎ、６Ｎ程度の純度になると、これを正確に認識するこ
とは極めて困難である。FIG. 3 shows the relationship between the residual resistance ratio obtained from experiments by the inventor and the element damage when using the copper wire. As can be seen, the damage rate rapidly decreases as the residual resistance ratio increases, and the residual resistance ratio is approximately 80%.
If it is 0 or more, the damage will be less than a few percent. In order to make the damage ratio close to zero, the residual resistance ratio should be set to 2500 or more. According to the inventor's experiment, the residual resistance ratio is 800.
When converted to purity, it corresponds to approximately 5N, or 99.999wt%, and 2500 corresponds to approximately 6N, or 99.9999wt%.
It was found to be equivalent to However, as mentioned above, 5
When the purity reaches about 6N, it is extremely difficult to accurately recognize it.

また、残留抵抗比を前記した値以上に設定した銅線につ
いて、ポンディング用銅線として用いた際の特性を更に
細かく検討したところ、第４図に示すような伸び率と引
っ張り強度の相関特性が得られた。これによると、伸び
率が小さい間は伸び率と引っ張り強度とは逆の関係にあ
るが、銅線の伸び率が略５％を越えると、伸び率をこれ
以上増大させても引っ張り強度の大幅な低下は見られず
、したがって銅線の機械的強度の大幅な低下が生じない
ことが判明した。そして、太さの異なる銅線を用いてボ
ンディングを行った条件下では、第５図のように半導体
装置として必要なポンディング強度は金ワイヤで実績が
あるように約１３ｇである。In addition, we conducted a more detailed study of the characteristics of copper wire with a residual resistance ratio set to a value higher than the above-mentioned value when used as bonding copper wire, and found that the correlation between elongation and tensile strength is as shown in Figure 4. was gotten. According to this, as long as the elongation rate is small, there is an inverse relationship between the elongation rate and the tensile strength, but when the elongation rate of the copper wire exceeds approximately 5%, even if the elongation rate is increased further, the tensile strength will significantly decrease. Therefore, it was found that no significant decrease in the mechanical strength of the copper wire occurred. Under conditions where bonding is performed using copper wires of different thicknesses, as shown in FIG. 5, the bonding strength required for a semiconductor device is about 13 g, as has been proven with gold wires.

これを確保するためには銅線の場合、線径は１５μｍで
伸び率は１０％以上あれば充分であることがわかる。In order to ensure this, in the case of copper wire, it is sufficient to have a wire diameter of 15 μm and an elongation rate of 10% or more.

これらの実験を通して、ボンディング強度を１３ｇ以上
とするためには、銅線の引っ張り強度は第４図から判る
ように少なくともｌｏｇにすることが必要であることが
判明している。Through these experiments, it has been found that in order to obtain a bonding strength of 13 g or more, the tensile strength of the copper wire must be at least logarithmic as can be seen from FIG.

ここで、前記した残留抵抗比が８００以上で、かつ伸び
率が１６％以上の銅線は例えば次のような製造方法で製
造できる。Here, the above-mentioned copper wire having a residual resistance ratio of 800 or more and an elongation rate of 16% or more can be manufactured, for example, by the following manufacturing method.

即ち、９９．９９９ｗｔ％以上の高純度銅を一方向凝固
となるように処理して直径２０ｍの鋳塊を鋳造する。That is, high-purity copper of 99.999 wt % or more is treated to solidify in one direction, and an ingot with a diameter of 20 m is cast.

次いで、それを中間加工率が９９％以上となるように線
引加工を行った後、中間熱処理を１００〜３００℃で略
１時間程度行い、線径が０４１１１Ｉ＋の線を形成する
。しかる後、線径が３０μｍ及び仕上加工率が８０〜９
５％となるように線引加工を行った後、真空中で仕上熱
処理を１００〜３００℃で約１時間行っている。Next, the wire is drawn so that the intermediate processing rate is 99% or more, and then an intermediate heat treatment is performed at 100 to 300° C. for about 1 hour to form a wire having a wire diameter of 04111I+. After that, the wire diameter is 30 μm and the finishing rate is 80 to 9.
After the wire drawing process was performed so that the thickness was 5%, finishing heat treatment was performed in a vacuum at 100 to 300°C for about 1 hour.

前記中間加工率が９９％未満であると中間熱処理工程を
経ても所期の特性が得られず、また中間熱処理が１００
℃未満、３００℃を越えると前記と同様に所期の効果が
得られない。更に、仕上加工率が８０％未満、９５％以
上だと仕上熱処理後に所定の伸び率が得られない。また
、仕上熱処理が１００℃未満、３００°Ｃを越える場合
も所期の機械的特性が得られない。If the intermediate processing rate is less than 99%, the desired properties will not be obtained even after the intermediate heat treatment process, and if the intermediate heat treatment is less than 100%.
If the temperature is lower than 300°C or higher than 300°C, the desired effect cannot be obtained as described above. Furthermore, if the finish processing rate is less than 80% or more than 95%, a predetermined elongation rate cannot be obtained after the final heat treatment. Furthermore, when the finishing heat treatment is performed at a temperature lower than 100°C or higher than 300°C, the desired mechanical properties cannot be obtained.

〔効果〕〔effect〕

（１）半導体装置のボンディング用銅線として残留抵抗
比が８００以上となるように構成しているので、ボンデ
ィングにおける素子チップのダメージを低減して信頼性
のある半導体装置を構成することができる。(1) Since the copper wire for bonding the semiconductor device is configured to have a residual resistance ratio of 800 or more, damage to the element chip during bonding can be reduced and a reliable semiconductor device can be constructed.

（２）残留抵抗比を２５００以上とすることにより、素
子チップのダメージを略零にすることができる。(2) By setting the residual resistance ratio to 2500 or more, damage to the element chip can be reduced to approximately zero.

（３）残留抵抗比を８００以上にする一方で、伸び率を
１６％以上とし、かつ引っ張り強度を１０ｇ以上として
いるので、素子チップのダメージを防止するとともに、
機械的強度が十分でしかもループ形状の安定なボンディ
ングを行うことができる。(3) While the residual resistance ratio is 800 or more, the elongation rate is 16% or more and the tensile strength is 10g or more, which prevents damage to the element chip and
It has sufficient mechanical strength and can perform stable bonding in a loop shape.

（４）残留抵抗比が８００以上の銅線を用いて素子チッ
プと外部リードとを接続して半導体装置を構成している
ので、素子チップのダメージがなく、しかも機械的強度
が高く、かつループ形状のよいボンディング構造を得る
ことができ、半導体装置の信転性を向上できる。(4) Since the semiconductor device is constructed by connecting the element chip and external leads using copper wire with a residual resistance ratio of 800 or more, there is no damage to the element chip, high mechanical strength, and loop A well-shaped bonding structure can be obtained, and reliability of the semiconductor device can be improved.

以上本発明者によってなされた発明を実施例にもとづき
具体的に説明したが、本発明は上記実施例に限定される
ものではなく、その要旨を逸脱しない範囲で種々変更可
能であることはいうまでもない。たとえば、前記した条
件を満たす銅線の製造方法は前記実施例で開示した方法
以外の方法を採用することができる。また、必要に応じ
て銅線には他の元素を含有させることができる。Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the above Examples and can be modified in various ways without departing from the gist thereof. Nor. For example, as a method for manufacturing a copper wire that satisfies the above conditions, methods other than those disclosed in the above embodiments may be employed. Further, the copper wire can contain other elements as necessary.

〔利用分野〕[Application field]

以上の説明では主として本発明者によってなされた発明
をその背景となった利用分野であるチップコートのない
レジンモールド型の半導体装置に適用した場合について
説明したが、それに限定されるものではなく、チップコ
ートをしたレジンモールド型及びセラミック封止型の半
導体装置、更にはハイブリッド構成の半導体装置にも同
様に適用できる。また、半導体装置以外の電子装置にお
いても銅線を用いて電気的接続を行うものであれば同様
に適用することができる。In the above explanation, the invention made by the present inventor was mainly applied to a resin mold type semiconductor device without a chip coat, which is the background field of application, but the present invention is not limited to this. The present invention can be similarly applied to coated resin-molded and ceramic-sealed semiconductor devices, as well as semiconductor devices with hybrid configurations. Further, the present invention can be similarly applied to electronic devices other than semiconductor devices as long as copper wires are used for electrical connection.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明を適用した半導体装置の一実施例の断面
図、 第２図はボンディング方法を説明するための構成図、 第３図は残留抵抗比とダメージ割合を示すグラフ、 第４図は伸び率と引っ張り強度の相関を示すグラフ、 第５図は伸び率とボンディング強度との相関を示すグラ
フである。 １・・・リードフレーム、２・・・タブ、３・・・素子
チップ、４・・・レジン、５・・・ポンデイングパツド
、６・・・外部導出用リード、７・・・銅線、１１・・
・ワイヤボンダ、１２・・・キャピラリ、１３・・・放
電電極、１４・・・シールド。 第　　１　　図 第　　２　　図 叛督体ｄ１こｃｅｃ＊） 第　　４　　図 ダ１ φ＝、Ｓ（１／Ｊ−戚 犠 り　　Ｃ２０ 第　　５　　図 碑び掌Ｃ’／６　） イ中０゛三渭３（Ｏ／ν）Fig. 1 is a cross-sectional view of an embodiment of a semiconductor device to which the present invention is applied, Fig. 2 is a configuration diagram for explaining the bonding method, Fig. 3 is a graph showing the residual resistance ratio and damage rate, Fig. 4 is a graph showing the correlation between elongation rate and tensile strength, and Figure 5 is a graph showing the correlation between elongation rate and bonding strength. DESCRIPTION OF SYMBOLS 1... Lead frame, 2... Tab, 3... Element chip, 4... Resin, 5... Ponding pad, 6... External lead-out lead, 7... Copper wire , 11...
- Wire bonder, 12... Capillary, 13... Discharge electrode, 14... Shield. Fig. 1 Fig. 2 Rebellion body d1 kocec*) Fig. 4 D1 φ=, S (1/J-related sacrifice C20 Fig. 5 Inscription and palm C'/6) I middle 0゛Sanwei 3 (O/ν)

Claims (1)

【特許請求の範囲】 １、電子装置内における電気的配線を行うためのボンデ
ィング用銅線であって、その残留抵抗比を８００以上に
設定したことを特徴とするボンディング用銅線。 ２、残留抵抗比が２５００以上である特許請求の範囲第
１項記載のボンディング用銅線。 ３、線径が１５μｍ以上、伸び率を１６％以上としてな
る特許請求の範囲第２項記載のボンディング用銅線。 ４、線径が１５μｍ以上、引っ張り強度を１０ｇ以上と
してなる特許請求の範囲第３項記載のボンディング用銅
線。 ５、内部素子とリード等を電気接続するボンディング用
銅線に、残留抵抗比が８００以上の銅線を用いてなるこ
とを特徴とする電子装置。 ６、内部の半導体素子と、外部導出リードとを前記銅線
で接続して半導体装置を構成してなる特許請求の範囲第
５項記載の電子装置。 ７、銅線をボールボンディング法によって半導体素子に
接続してなる特許請求の範囲第６項記載の電子装置。 ８、ボンディング用銅線に伸び率が１６％以上、引っ張
り強度が１０ｇ以上のものを用いてなる特許請求の範囲
第７項記載の電子装置。[Scope of Claims] 1. A bonding copper wire for electrical wiring in an electronic device, characterized in that the residual resistance ratio thereof is set to 800 or more. 2. The copper wire for bonding according to claim 1, which has a residual resistance ratio of 2500 or more. 3. The copper wire for bonding according to claim 2, which has a wire diameter of 15 μm or more and an elongation rate of 16% or more. 4. The copper wire for bonding according to claim 3, which has a wire diameter of 15 μm or more and a tensile strength of 10 g or more. 5. An electronic device characterized in that a copper wire having a residual resistance ratio of 800 or more is used as a bonding copper wire for electrically connecting an internal element to a lead or the like. 6. The electronic device according to claim 5, wherein the semiconductor device is constructed by connecting an internal semiconductor element and an external lead by the copper wire. 7. The electronic device according to claim 6, wherein the copper wire is connected to the semiconductor element by a ball bonding method. 8. An electronic device according to claim 7, wherein the bonding copper wire has an elongation of 16% or more and a tensile strength of 10g or more.
JP60228653A 1985-10-16 1985-10-16 Copper wire for bonding and electronic device using the wire Pending JPS6289347A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60228653A JPS6289347A (en) 1985-10-16 1985-10-16 Copper wire for bonding and electronic device using the wire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60228653A JPS6289347A (en) 1985-10-16 1985-10-16 Copper wire for bonding and electronic device using the wire

Publications (1)

Publication Number Publication Date
JPS6289347A true JPS6289347A (en) 1987-04-23

Family

ID=16879705

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60228653A Pending JPS6289347A (en) 1985-10-16 1985-10-16 Copper wire for bonding and electronic device using the wire

Country Status (1)

Country Link
JP (1) JPS6289347A (en)

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