JPS6112405B2 - - Google Patents
Info
- Publication number
- JPS6112405B2 JPS6112405B2 JP52047273A JP4727377A JPS6112405B2 JP S6112405 B2 JPS6112405 B2 JP S6112405B2 JP 52047273 A JP52047273 A JP 52047273A JP 4727377 A JP4727377 A JP 4727377A JP S6112405 B2 JPS6112405 B2 JP S6112405B2
- Authority
- JP
- Japan
- Prior art keywords
- channel
- electrode
- channels
- sampling
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005070 sampling Methods 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 10
- 238000012546 transfer Methods 0.000 claims description 7
- 230000005428 wave function Effects 0.000 claims 4
- 230000010363 phase shift Effects 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 19
- 230000003111 delayed effect Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 230000003071 parasitic effect Effects 0.000 description 6
- 230000001934 delay Effects 0.000 description 5
- 230000002238 attenuated effect Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- AMHIJMKZPBMCKI-PKLGAXGESA-N ctds Chemical compound O[C@@H]1[C@@H](OS(O)(=O)=O)[C@@H]2O[C@H](COS(O)(=O)=O)[C@H]1O[C@H]([C@@H]([C@H]1OS(O)(=O)=O)OS(O)(=O)=O)O[C@H](CO)[C@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O2 AMHIJMKZPBMCKI-PKLGAXGESA-N 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76808—Input structures
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H15/00—Transversal filters
- H03H15/02—Transversal filters using analogue shift registers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Filters That Use Time-Delay Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7612064A FR2349236A1 (fr) | 1976-04-23 | 1976-04-23 | Etage d'entree pour filtre passe-bas a transfert de charges et filtre passe-bas comportant un tel etage d'entree |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS52130264A JPS52130264A (en) | 1977-11-01 |
| JPS6112405B2 true JPS6112405B2 (US20020095090A1-20020718-M00002.png) | 1986-04-08 |
Family
ID=9172238
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4727377A Granted JPS52130264A (en) | 1976-04-23 | 1977-04-23 | Input stage for charge transfer element low pass filter |
Country Status (5)
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4107550A (en) * | 1977-01-19 | 1978-08-15 | International Business Machines Corporation | Bucket brigade circuits |
| FR2390857A1 (fr) * | 1977-05-13 | 1978-12-08 | Thomson Csf | Filtre recursif a transfert de charges electriques |
| NL186666C (nl) * | 1977-10-13 | 1992-03-16 | Philips Nv | Ladingsoverdrachtinrichting. |
| FR2410908A1 (fr) * | 1977-11-30 | 1979-06-29 | Thomson Csf | Dispositif de filtrage multiplexe et modulateur comportant un tel dispositif |
| FR2414823A1 (fr) * | 1978-01-13 | 1979-08-10 | Thomson Csf | Dispositif dephaseur a semi-conducteur et filtre a transfert de charges comportant un tel dispositif |
| FR2427009A1 (fr) * | 1978-05-26 | 1979-12-21 | Thomson Csf | Dispositif differentiel utilisant le transfert de charges electriques dans un semi-conducteur, et filtre et ligne a retard comportant un tel dispositif |
| JPS5521684A (en) * | 1978-08-03 | 1980-02-15 | Matsushita Electric Ind Co Ltd | Comb type filter |
| DE2838100A1 (de) * | 1978-08-31 | 1980-04-10 | Siemens Ag | Eingangsstufe fuer eine ladungsverschiebeanordnung |
| US4205283A (en) * | 1978-10-10 | 1980-05-27 | The United States Of America As Represented By The Secretary Of The Army | Signal delay system |
| DE2853799A1 (de) * | 1978-12-13 | 1980-06-26 | Siemens Ag | Taktgesteuerte monolithisch integrierbare abtastschaltung |
| DE2912745C2 (de) * | 1979-03-30 | 1984-05-03 | Siemens AG, 1000 Berlin und 8000 München | Monolithisch integrierte Ladungsverschiebeschaltung |
| US4243958A (en) * | 1979-04-26 | 1981-01-06 | Tektronix, Inc. | Phase-multiplexed CCD transversal filter |
| DE3104521A1 (de) * | 1981-02-09 | 1982-08-19 | Siemens AG, 1000 Berlin und 8000 München | Ctd-transversalfilter |
| JPS58171858A (ja) * | 1982-03-31 | 1983-10-08 | Toshiba Corp | 電荷転送装置 |
| JPH09129864A (ja) * | 1995-10-30 | 1997-05-16 | Canon Inc | 半導体装置及びそれを用いた半導体回路、相関演算装置、信号処理システム |
| US6265998B1 (en) * | 1999-11-30 | 2001-07-24 | Agere Systems Guardian Corp. | Sampling device having an intrinsic filter |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3546940A (en) * | 1968-07-18 | 1970-12-15 | Combustion Eng | Turbine meter |
| DE1937731A1 (de) * | 1969-07-24 | 1971-02-04 | Standard Elek K Lorenz Ag | Verzoegerungseinrichtung fuer Analogsignale |
| US3858232A (en) * | 1970-02-16 | 1974-12-31 | Bell Telephone Labor Inc | Information storage devices |
| US3819953A (en) * | 1972-11-22 | 1974-06-25 | Gen Electric | Differential bucket-brigade circuit |
| US3940602A (en) * | 1974-09-23 | 1976-02-24 | The United States Of America As Represented By The Secretary Of The Navy | Signal processing imager array using charge transfer concepts |
| US4032867A (en) * | 1975-09-02 | 1977-06-28 | General Electric Company | Balanced transversal filter |
-
1976
- 1976-04-23 FR FR7612064A patent/FR2349236A1/fr active Granted
-
1977
- 1977-04-19 US US05/788,779 patent/US4145676A/en not_active Expired - Lifetime
- 1977-04-20 GB GB16507/77A patent/GB1524664A/en not_active Expired
- 1977-04-22 DE DE772718093A patent/DE2718093B2/de active Granted
- 1977-04-23 JP JP4727377A patent/JPS52130264A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE2718093B2 (de) | 1979-03-01 |
| JPS52130264A (en) | 1977-11-01 |
| US4145676A (en) | 1979-03-20 |
| FR2349236B1 (US20020095090A1-20020718-M00002.png) | 1978-08-25 |
| DE2718093A1 (de) | 1977-11-03 |
| FR2349236A1 (fr) | 1977-11-18 |
| GB1524664A (en) | 1978-09-13 |
| DE2718093C3 (US20020095090A1-20020718-M00002.png) | 1983-11-17 |
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