JPS6112391B2 - - Google Patents
Info
- Publication number
- JPS6112391B2 JPS6112391B2 JP51048152A JP4815276A JPS6112391B2 JP S6112391 B2 JPS6112391 B2 JP S6112391B2 JP 51048152 A JP51048152 A JP 51048152A JP 4815276 A JP4815276 A JP 4815276A JP S6112391 B2 JPS6112391 B2 JP S6112391B2
- Authority
- JP
- Japan
- Prior art keywords
- channel
- gate
- constant current
- voltage
- reference voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/8311—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different channel structures
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
- Amplifiers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4815276A JPS52130573A (en) | 1976-04-27 | 1976-04-27 | Amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4815276A JPS52130573A (en) | 1976-04-27 | 1976-04-27 | Amplifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS52130573A JPS52130573A (en) | 1977-11-01 |
| JPS6112391B2 true JPS6112391B2 (enrdf_load_stackoverflow) | 1986-04-08 |
Family
ID=12795381
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4815276A Granted JPS52130573A (en) | 1976-04-27 | 1976-04-27 | Amplifier |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS52130573A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2545374B2 (ja) * | 1986-11-29 | 1996-10-16 | 富士通株式会社 | 定電流源回路を有する差動増幅回路 |
| JP4764234B2 (ja) * | 2006-04-07 | 2011-08-31 | 株式会社東芝 | インピーダンス変換回路及び電子機器 |
-
1976
- 1976-04-27 JP JP4815276A patent/JPS52130573A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS52130573A (en) | 1977-11-01 |
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