JPS52130573A - Amplifier - Google Patents

Amplifier

Info

Publication number
JPS52130573A
JPS52130573A JP4815276A JP4815276A JPS52130573A JP S52130573 A JPS52130573 A JP S52130573A JP 4815276 A JP4815276 A JP 4815276A JP 4815276 A JP4815276 A JP 4815276A JP S52130573 A JPS52130573 A JP S52130573A
Authority
JP
Japan
Prior art keywords
mos
circuits
amplifier
analong
monolithically
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4815276A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6112391B2 (enrdf_load_stackoverflow
Inventor
Tatsuji Asakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP4815276A priority Critical patent/JPS52130573A/ja
Publication of JPS52130573A publication Critical patent/JPS52130573A/ja
Publication of JPS6112391B2 publication Critical patent/JPS6112391B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/8311—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having different channel structures

Landscapes

  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
JP4815276A 1976-04-27 1976-04-27 Amplifier Granted JPS52130573A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4815276A JPS52130573A (en) 1976-04-27 1976-04-27 Amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4815276A JPS52130573A (en) 1976-04-27 1976-04-27 Amplifier

Publications (2)

Publication Number Publication Date
JPS52130573A true JPS52130573A (en) 1977-11-01
JPS6112391B2 JPS6112391B2 (enrdf_load_stackoverflow) 1986-04-08

Family

ID=12795381

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4815276A Granted JPS52130573A (en) 1976-04-27 1976-04-27 Amplifier

Country Status (1)

Country Link
JP (1) JPS52130573A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62161206A (ja) * 1986-11-29 1987-07-17 Fujitsu Ltd 定電流源回路を有する差動増幅回路
JP2007281951A (ja) * 2006-04-07 2007-10-25 Toshiba Corp インピーダンス変換回路及び電子機器

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62161206A (ja) * 1986-11-29 1987-07-17 Fujitsu Ltd 定電流源回路を有する差動増幅回路
JP2007281951A (ja) * 2006-04-07 2007-10-25 Toshiba Corp インピーダンス変換回路及び電子機器

Also Published As

Publication number Publication date
JPS6112391B2 (enrdf_load_stackoverflow) 1986-04-08

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