JPS61123184A - 導電変調型ｍｏｓｆｅｔ - Google Patents

導電変調型ｍｏｓｆｅｔ

Info

Publication number
JPS61123184A
JPS61123184A JP24481184A JP24481184A JPS61123184A JP S61123184 A JPS61123184 A JP S61123184A JP 24481184 A JP24481184 A JP 24481184A JP 24481184 A JP24481184 A JP 24481184A JP S61123184 A JPS61123184 A JP S61123184A
Authority
JP
Japan
Prior art keywords
layer
type
diffusion layer
conductivity type
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24481184A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0467790B2 (enrdf_load_stackoverflow
Inventor
Akio Nakagawa
明夫 中川
Hiromichi Ohashi
大橋　弘道
Yoshihiro Yamaguchi
好広 山口
Kiminori Watanabe
渡辺　君則
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP24481184A priority Critical patent/JPS61123184A/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to US06/738,188 priority patent/US4672407A/en
Priority to DE3546745A priority patent/DE3546745C2/de
Priority to GB08513599A priority patent/GB2161649B/en
Priority to DE19853519389 priority patent/DE3519389A1/de
Publication of JPS61123184A publication Critical patent/JPS61123184A/ja
Priority to US07/019,337 priority patent/US4782372A/en
Priority to US07/116,357 priority patent/US4881120A/en
Priority to US07/146,405 priority patent/US5093701A/en
Priority to US07/205,365 priority patent/US4928155A/en
Priority to US07/712,997 priority patent/US5086323A/en
Priority to US07/799,311 priority patent/US5286984A/en
Publication of JPH0467790B2 publication Critical patent/JPH0467790B2/ja
Priority to US08/261,254 priority patent/US5780887A/en
Priority to US09/104,326 priority patent/US6025622A/en
Granted legal-status Critical Current

Links

JP24481184A 1984-05-30 1984-11-20 導電変調型ｍｏｓｆｅｔ Granted JPS61123184A (ja)

Priority Applications (13)

Application Number Priority Date Filing Date Title
JP24481184A JPS61123184A (ja) 1984-11-20 1984-11-20 導電変調型ｍｏｓｆｅｔ
US06/738,188 US4672407A (en) 1984-05-30 1985-05-28 Conductivity modulated MOSFET
DE3546745A DE3546745C2 (de) 1984-05-30 1985-05-30 Lateraler MOS-Feldeffekttransistor mit Leitfähigkeitsmodulation
GB08513599A GB2161649B (en) 1984-05-30 1985-05-30 Conductivity modulated mosfet
DE19853519389 DE3519389A1 (de) 1984-05-30 1985-05-30 Mosfet mit veraenderlicher leitfaehigkeit
US07/019,337 US4782372A (en) 1984-05-30 1987-02-26 Lateral conductivity modulated MOSFET
US07/116,357 US4881120A (en) 1984-05-30 1987-11-04 Conductive modulated MOSFET
US07/146,405 US5093701A (en) 1984-05-30 1988-01-21 Conductivity modulated mosfet
US07/205,365 US4928155A (en) 1984-05-30 1988-06-10 Lateral conductivity modulated MOSFET
US07/712,997 US5086323A (en) 1984-05-30 1991-06-10 Conductivity modulated mosfet
US07/799,311 US5286984A (en) 1984-05-30 1991-11-27 Conductivity modulated MOSFET
US08/261,254 US5780887A (en) 1984-05-30 1994-06-14 Conductivity modulated MOSFET
US09/104,326 US6025622A (en) 1984-05-30 1998-06-25 Conductivity modulated MOSFET

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24481184A JPS61123184A (ja) 1984-11-20 1984-11-20 導電変調型ｍｏｓｆｅｔ

Publications (2)

Publication Number Publication Date
JPS61123184A true JPS61123184A (ja) 1986-06-11
JPH0467790B2 JPH0467790B2 (enrdf_load_stackoverflow) 1992-10-29

Family

ID=17124297

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24481184A Granted JPS61123184A (ja) 1984-05-30 1984-11-20 導電変調型ｍｏｓｆｅｔ

Country Status (1)

Country Link
JP (1) JPS61123184A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63209172A (ja) * 1987-02-26 1988-08-30 Toshiba Corp 絶縁ゲ−ト型自己タ−ンオフサイリスタ
JPS63260176A (ja) * 1987-04-17 1988-10-27 Sanyo Electric Co Ltd 半導体装置の製造方法
US4980743A (en) * 1987-02-26 1990-12-25 Kabushiki Kaisha Toshiba Conductivity-modulation metal oxide semiconductor field effect transistor
US5105243A (en) * 1987-02-26 1992-04-14 Kabushiki Kaisha Toshiba Conductivity-modulation metal oxide field effect transistor with single gate structure
US5212396A (en) * 1983-11-30 1993-05-18 Kabushiki Kaisha Toshiba Conductivity modulated field effect transistor with optimized anode emitter and anode base impurity concentrations
US5237186A (en) * 1987-02-26 1993-08-17 Kabushiki Kaisha Toshiba Conductivity-modulation metal oxide field effect transistor with single gate structure

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5212396A (en) * 1983-11-30 1993-05-18 Kabushiki Kaisha Toshiba Conductivity modulated field effect transistor with optimized anode emitter and anode base impurity concentrations
JPS63209172A (ja) * 1987-02-26 1988-08-30 Toshiba Corp 絶縁ゲ−ト型自己タ−ンオフサイリスタ
US4980743A (en) * 1987-02-26 1990-12-25 Kabushiki Kaisha Toshiba Conductivity-modulation metal oxide semiconductor field effect transistor
US5105243A (en) * 1987-02-26 1992-04-14 Kabushiki Kaisha Toshiba Conductivity-modulation metal oxide field effect transistor with single gate structure
US5237186A (en) * 1987-02-26 1993-08-17 Kabushiki Kaisha Toshiba Conductivity-modulation metal oxide field effect transistor with single gate structure
JPS63260176A (ja) * 1987-04-17 1988-10-27 Sanyo Electric Co Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0467790B2 (enrdf_load_stackoverflow) 1992-10-29

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term