JPS61123155A - シ−ム熔接方法 - Google Patents

シ−ム熔接方法

Info

Publication number
JPS61123155A
JPS61123155A JP23648684A JP23648684A JPS61123155A JP S61123155 A JPS61123155 A JP S61123155A JP 23648684 A JP23648684 A JP 23648684A JP 23648684 A JP23648684 A JP 23648684A JP S61123155 A JPS61123155 A JP S61123155A
Authority
JP
Japan
Prior art keywords
cap
electrodes
welding
pair
seam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23648684A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0367343B2 (cg-RX-API-DMAC7.html
Inventor
Hiroshi Hasegawa
博 長谷川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP23648684A priority Critical patent/JPS61123155A/ja
Publication of JPS61123155A publication Critical patent/JPS61123155A/ja
Publication of JPH0367343B2 publication Critical patent/JPH0367343B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Die Bonding (AREA)
JP23648684A 1984-11-08 1984-11-08 シ−ム熔接方法 Granted JPS61123155A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23648684A JPS61123155A (ja) 1984-11-08 1984-11-08 シ−ム熔接方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23648684A JPS61123155A (ja) 1984-11-08 1984-11-08 シ−ム熔接方法

Publications (2)

Publication Number Publication Date
JPS61123155A true JPS61123155A (ja) 1986-06-11
JPH0367343B2 JPH0367343B2 (cg-RX-API-DMAC7.html) 1991-10-22

Family

ID=17001440

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23648684A Granted JPS61123155A (ja) 1984-11-08 1984-11-08 シ−ム熔接方法

Country Status (1)

Country Link
JP (1) JPS61123155A (cg-RX-API-DMAC7.html)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5268837A (en) * 1975-12-08 1977-06-08 Hitachi Ltd Atmospheric seam welding process

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5268837A (en) * 1975-12-08 1977-06-08 Hitachi Ltd Atmospheric seam welding process

Also Published As

Publication number Publication date
JPH0367343B2 (cg-RX-API-DMAC7.html) 1991-10-22

Similar Documents

Publication Publication Date Title
US3665590A (en) Semiconductor flip-chip soldering method
JPS61123155A (ja) シ−ム熔接方法
JP2009272554A (ja) ハンダ付け方法
CN101373762B (zh) 功率半导体模块
US20050252951A1 (en) Method for assembling and brazing CPU heat sink modules
JP2015024443A (ja) 両面パワーモジュールのための液相拡散接合プロセス
RU2171520C2 (ru) Способ сборки полупроводниковых приборов
CN1270376C (zh) 引线框架或元器件的引线连接到基底的接触焊盘上的方法
JP3240876B2 (ja) バンプ付きチップの実装方法
JPH03217024A (ja) 半導体装置
CN111230300A (zh) 一种smt阶梯模板焊接方法及装置
JP2653405B2 (ja) 半導体装置用パッケージ
JP3127318B2 (ja) 電子部品の製造方法及び電子部品実装用リードフレーム
Francis Techniques, equipment and procedures for production welding of electronics
JPS6290936A (ja) チツプ形部品の半田付け方法
JPH04180029A (ja) 回路の接続構造体
JP2025054986A (ja) 半導体装置の製造方法
JPS59117238A (ja) 半導体装置の製造方法
JPS61119050A (ja) 半導体装置の製造方法
JPH0631458A (ja) マイクロパラレルシーム接合装置
JP3128163B2 (ja) ワイヤボンディング方法
JPH04326783A (ja) 半導体レーザ装置用ステムの製造方法
JP2669321B2 (ja) Tcp塔載装置
JP2543867Y2 (ja) Sip型電子部品
JPH06224315A (ja) シーム接合法