JPS61120478A - 半導体集積回路 - Google Patents
半導体集積回路Info
- Publication number
- JPS61120478A JPS61120478A JP24189684A JP24189684A JPS61120478A JP S61120478 A JPS61120478 A JP S61120478A JP 24189684 A JP24189684 A JP 24189684A JP 24189684 A JP24189684 A JP 24189684A JP S61120478 A JPS61120478 A JP S61120478A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- zener diode
- diffused
- embedded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000009792 diffusion process Methods 0.000 claims description 29
- 238000002955 isolation Methods 0.000 claims description 27
- 238000000926 separation method Methods 0.000 claims description 4
- 230000015556 catabolic process Effects 0.000 abstract description 13
- 230000007423 decrease Effects 0.000 abstract description 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000006185 dispersion Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 2
- 102000005717 Myeloma Proteins Human genes 0.000 description 1
- 108010045503 Myeloma Proteins Proteins 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0664—Vertical bipolar transistor in combination with diodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Integrated Circuits (AREA)
- Element Separation (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24189684A JPS61120478A (ja) | 1984-11-16 | 1984-11-16 | 半導体集積回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24189684A JPS61120478A (ja) | 1984-11-16 | 1984-11-16 | 半導体集積回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61120478A true JPS61120478A (ja) | 1986-06-07 |
| JPH0568864B2 JPH0568864B2 (US06826419-20041130-M00005.png) | 1993-09-29 |
Family
ID=17081163
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24189684A Granted JPS61120478A (ja) | 1984-11-16 | 1984-11-16 | 半導体集積回路 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61120478A (US06826419-20041130-M00005.png) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5085284A (US06826419-20041130-M00005.png) * | 1973-11-29 | 1975-07-09 | ||
| JPS5785266A (en) * | 1980-11-17 | 1982-05-27 | Toshiba Corp | Zener diode |
-
1984
- 1984-11-16 JP JP24189684A patent/JPS61120478A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5085284A (US06826419-20041130-M00005.png) * | 1973-11-29 | 1975-07-09 | ||
| JPS5785266A (en) * | 1980-11-17 | 1982-05-27 | Toshiba Corp | Zener diode |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0568864B2 (US06826419-20041130-M00005.png) | 1993-09-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4038680A (en) | Semiconductor integrated circuit device | |
| US4780425A (en) | Method of making a bipolar transistor with double diffused isolation regions | |
| JPS6229904B2 (US06826419-20041130-M00005.png) | ||
| JPH07326773A (ja) | ダイオードおよびその製造方法 | |
| US6815799B2 (en) | Semiconductor integrated circuit device | |
| JPH06104459A (ja) | 半導体装置 | |
| JPS61120478A (ja) | 半導体集積回路 | |
| JP2518929B2 (ja) | バイポ―ラ型半導体集積回路 | |
| JPS6327865B2 (US06826419-20041130-M00005.png) | ||
| JPS60218878A (ja) | 半導体集積回路 | |
| JP2953623B2 (ja) | プレーナ型サイリスタ | |
| JP2001077314A (ja) | 半導体装置及びその製造方法 | |
| JPS6140140B2 (US06826419-20041130-M00005.png) | ||
| JPS59198768A (ja) | ツエナ−ダイオ−ド | |
| KR100206579B1 (ko) | 집적 주입 논리(i l) 소자 및 그 제조 방법 | |
| JPS601843A (ja) | 半導体集積回路 | |
| JPH02114645A (ja) | バイポーラトランジスタ | |
| JPH09181335A (ja) | 半導体装置 | |
| JPH08227941A (ja) | 複合半導体素子 | |
| JPH0629374A (ja) | 半導体集積回路装置 | |
| JPS634715B2 (US06826419-20041130-M00005.png) | ||
| JPS63136660A (ja) | 半導体装置とその製造法 | |
| JPH05206153A (ja) | 半導体集積回路装置 | |
| JPS59127865A (ja) | 半導体装置 | |
| JPS6031105B2 (ja) | 半導体装置 |
