JPS61120435A - Inspecting apparatus of semiconductor integrated circuit - Google Patents

Abstract

PURPOSE:To perform accurate measurement, when the characteristics of ICs, which are formed on a wafer, are measured, by operating at least three or more IC self-substrate-bias generator circuits (BBG). CONSTITUTION:In addition to probes 1, which are contacted with an IC 3 to be measured, a probe card 2 has probes 6, which are contacted with power source pads of two or more other ICs 7 neighboring the IC 3. Three or more IC BBGs are operated. A chuck 5 is electrically opened. Thus the substrate potential of the entire wader 4 is kept at the potential closed to the potential of the IC 3. Then the characteristics of the IC 3 are accurately measured. At this time, when the BBGs of the ICs 7 are not operated, ability is not sufficient enough if only with the BBG for the IC 3 and the substrate potential becomes unstable. The BBG is designed so that it is operated by only supplying an ordinary power source voltage. Only two probes 6 are sufficient to be added to the probe card 2.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor integrated circuit testing device, and is particularly applicable to a semiconductor integrated circuit device fabricated on a semiconductor substrate and having a self-substrate bias generation circuit. Needle (hereinafter referred to as glove)
Semiconductor integrated circuit testing equipment (
(hereinafter referred to as a probe card).

[Conventional technology]

Conventionally, in order to determine whether an integrated circuit device (hereinafter referred to as IC) 3 fabricated on a semiconductor substrate 4 is good or bad, the method shown in FIG.
a) # As shown in (b), the measurement is carried out by bringing the glove 1 of the glove card 2 into contact with the electrode (pad) of the IC 3, and by keeping the metal chuck 5, which holds the substrate semiconductor by suction, at a constant potential. Ta. The potential of this substrate semiconductor is
It has a great influence on the characteristics of an IC, and especially in the case of a MOS IC, the threshold voltage of each MOS transistor constituting the IC changes greatly depending on the substrate potential. Further, in the case of conventional ICs, the substrate potential is often supplied from outside.

However, in recent years, as the number of ICs incorporating a self-substrate bias generation circuit (hereinafter referred to as BBG) has increased, it has become difficult to accurately measure the electrical characteristics of ICs using conventional measurement methods.

This is because the substrate bias created by the BBG is created using an oscillation circuit using the power supply voltage of the device, so the substrate potential is not a constant potential, and the IC circuit has characteristics of the BBG. Since it is designed according to
This interferes with the substrate potential generated by the BBG, making accurate characteristic measurements difficult.

[Problem that the invention seeks to solve]

For this reason, there is a method of measuring without applying a potential to the suction chuck, but BBG was originally designed to apply a bias to one rc chip, but when measuring in the wafer state, it is difficult to measure the entire semiconductor substrate wafer. Since it is necessary to apply a bias to the BBG, a BBG of 761 pieces does not have sufficient capacity and the measurement becomes unstable.

The present invention provides an apparatus that can accurately measure the characteristics of an IC having a BBG in a wafer state.

[Means for solving problems]

The present invention relates to a semiconductor integrated circuit testing apparatus that measures the characteristics of a plurality of integrated circuit devices fabricated on a semiconductor substrate and having self-substrate pie and ass generating circuits by bringing a probe into contact with the device. The semiconductor integrated circuit testing apparatus is characterized in that, in addition to the needle, a probe is provided that contacts the power supply electrodes of at least two other integrated circuit devices adjacent to the integrated circuit device to be measured.

〔Example〕

Embodiments of the present invention will be described below with reference to the drawings.

In FIGS. 1(a) and 1(b), the globe ode 2 according to the present invention has probes 1, 1 . . . . Separately, it is equipped with a probe 6.6 that contacts the power supply d'wood of two or more other ICs adjacent to the IC3, and connects the glove 1 to the IC3 and the glove 6 to the electrode pad of the IC7. By contacting the IC, operating the BBG of three or more ICs 3 and 7, and keeping the circuit 5 electrically open, the
By bringing the entire substrate potential close to the potential of IC3, the electrical characteristics of IC3 are accurately measured. Incidentally, if the globe 6 does not operate the BBG of the adjacent IC 7 at this time, the BBG of the IC 3 alone will not have sufficient capacity and the substrate potential will become unstable. Further, since the BBG is designed to operate by simply applying a power supply voltage, it is only necessary to add two probes 6 to the probe card 2.

〔Effect of the invention〕

As described above, the present invention operates the BBGs of at least three ICs when measuring the characteristics of an IC fabricated on a wafer, thereby adjusting the substrate potential of the wafer to the BBG of one IC. This has the effect of making it possible to bring the potential into a state extremely close to that of , allowing accurate characteristic measurements to be made.

[Brief explanation of drawings]

1(a) and 1(b) show an embodiment of the present invention, (,) is a plan view, (b) is a sectional view, and FIG.
a) t (b) shows a conventional example, (a)
is a plan view, and axis) is a cross-sectional view. l...Probe that comes into contact with the IC to be measured;
2... Globe card, 3... IC to be measured, 4
...Semiconductor wafer, 5...Adsorption chuck, 6...
・Glove that touches the power supply pad of the IC adjacent to the IC to be measured, 7... C0 adjacent to the IC to be measured ((Z) Figure 1

Claims (1)

[Claims] (1) In a semiconductor integrated circuit testing device that measures the characteristics of one of a plurality of integrated circuit devices having a self-substrate bias generation circuit fabricated on a semiconductor substrate by bringing a probe into contact with the device, the probe and Separately, a semiconductor integrated circuit testing device comprising a probe that is brought into contact with power supply electrodes of at least two other integrated circuit devices adjacent to the integrated circuit device to be measured.