JPS6111991A - 半導体メモリ装置 - Google Patents

半導体メモリ装置

Info

Publication number
JPS6111991A
JPS6111991A JP59131872A JP13187284A JPS6111991A JP S6111991 A JPS6111991 A JP S6111991A JP 59131872 A JP59131872 A JP 59131872A JP 13187284 A JP13187284 A JP 13187284A JP S6111991 A JPS6111991 A JP S6111991A
Authority
JP
Japan
Prior art keywords
circuit
line
sense amplifier
memory cell
data line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59131872A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0551997B2 (enrdf_load_stackoverflow
Inventor
Hitoshi Yamada
均 山田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP59131872A priority Critical patent/JPS6111991A/ja
Publication of JPS6111991A publication Critical patent/JPS6111991A/ja
Publication of JPH0551997B2 publication Critical patent/JPH0551997B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Static Random-Access Memory (AREA)
JP59131872A 1984-06-28 1984-06-28 半導体メモリ装置 Granted JPS6111991A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59131872A JPS6111991A (ja) 1984-06-28 1984-06-28 半導体メモリ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59131872A JPS6111991A (ja) 1984-06-28 1984-06-28 半導体メモリ装置

Publications (2)

Publication Number Publication Date
JPS6111991A true JPS6111991A (ja) 1986-01-20
JPH0551997B2 JPH0551997B2 (enrdf_load_stackoverflow) 1993-08-04

Family

ID=15068105

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59131872A Granted JPS6111991A (ja) 1984-06-28 1984-06-28 半導体メモリ装置

Country Status (1)

Country Link
JP (1) JPS6111991A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62250588A (ja) * 1986-04-23 1987-10-31 Hitachi Ltd スタテイツク型ram
JPS62273287A (ja) * 1986-05-20 1987-11-27 Mitsubishi Chem Ind Ltd 高品位コ−クスの製造方法
JPH01179292A (ja) * 1987-12-29 1989-07-17 Nec Corp 半導体記憶装置
JPH029088A (ja) * 1988-02-16 1990-01-12 Texas Instr Inc <Ti> 改良したバイ―cmos読取り/書込みメモリ
JPH03228289A (ja) * 1989-11-30 1991-10-09 Hyundai Electron Ind Co Ltd ダイナミックランダムアクセスメモリ用分離回路

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62250588A (ja) * 1986-04-23 1987-10-31 Hitachi Ltd スタテイツク型ram
JPS62273287A (ja) * 1986-05-20 1987-11-27 Mitsubishi Chem Ind Ltd 高品位コ−クスの製造方法
JPH01179292A (ja) * 1987-12-29 1989-07-17 Nec Corp 半導体記憶装置
JPH029088A (ja) * 1988-02-16 1990-01-12 Texas Instr Inc <Ti> 改良したバイ―cmos読取り/書込みメモリ
JPH03228289A (ja) * 1989-11-30 1991-10-09 Hyundai Electron Ind Co Ltd ダイナミックランダムアクセスメモリ用分離回路

Also Published As

Publication number Publication date
JPH0551997B2 (enrdf_load_stackoverflow) 1993-08-04

Similar Documents

Publication Publication Date Title
JPH02201797A (ja) 半導体メモリ装置
GB2226721A (en) Clock pulse distributor for memory uses reset function
JPH04370596A (ja) 高速センシング動作を実行するセンスアンプ
JPH0422318B2 (enrdf_load_stackoverflow)
KR100297717B1 (ko) 반도체메모리의입출력선프리차아지회로및이를사용하는반도체메모리
US6845049B2 (en) Semiconductor memory device including a delaying circuit capable of generating a delayed signal with a substantially constant delay time
US5812492A (en) Control signal generation circuit and semiconductor memory device that can correspond to high speed external clock signal
US6154404A (en) Integrated circuit memory devices having sense amplifier driver circuits therein that improve writing efficiency
US6741518B2 (en) Semiconductor integrated circuit device and data writing method therefor
JPS6362839B2 (enrdf_load_stackoverflow)
JPH0863967A (ja) Dram内のアクセストランジスタを介したチャージ転送の検知のためのセンス回路
JPS6111991A (ja) 半導体メモリ装置
JP2000331481A (ja) 半導体記憶装置
JP4272592B2 (ja) 半導体集積回路
US4583202A (en) Semiconductor memory device
JPH0312396B2 (enrdf_load_stackoverflow)
JPH0883491A (ja) データ読出回路
JPH02154393A (ja) 半導体記憶回路
JPH01116992A (ja) センス増幅器制御回路
US7339845B2 (en) Memory device
KR100259165B1 (ko) 반도체 메모리 소자의 비트라인 아이솔레이션 전압발생회로
KR100190099B1 (ko) 데이터 라인 등화 장치
JPH0636586A (ja) 半導体読み出し専用記憶装置
JPH0770224B2 (ja) 同期式スタティックランダムアクセスメモリ
KR100222036B1 (ko) 반도체 메모리 장치의 라이트 회로

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term