JPS6111991A - 半導体メモリ装置 - Google Patents
半導体メモリ装置Info
- Publication number
- JPS6111991A JPS6111991A JP59131872A JP13187284A JPS6111991A JP S6111991 A JPS6111991 A JP S6111991A JP 59131872 A JP59131872 A JP 59131872A JP 13187284 A JP13187284 A JP 13187284A JP S6111991 A JPS6111991 A JP S6111991A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- line
- sense amplifier
- memory cell
- data line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 230000015654 memory Effects 0.000 claims abstract description 30
- 230000004913 activation Effects 0.000 abstract description 10
- 238000010586 diagram Methods 0.000 description 4
- 238000003491 array Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 210000005069 ears Anatomy 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Landscapes
- Static Random-Access Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59131872A JPS6111991A (ja) | 1984-06-28 | 1984-06-28 | 半導体メモリ装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59131872A JPS6111991A (ja) | 1984-06-28 | 1984-06-28 | 半導体メモリ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6111991A true JPS6111991A (ja) | 1986-01-20 |
JPH0551997B2 JPH0551997B2 (enrdf_load_stackoverflow) | 1993-08-04 |
Family
ID=15068105
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59131872A Granted JPS6111991A (ja) | 1984-06-28 | 1984-06-28 | 半導体メモリ装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6111991A (enrdf_load_stackoverflow) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62250588A (ja) * | 1986-04-23 | 1987-10-31 | Hitachi Ltd | スタテイツク型ram |
JPS62273287A (ja) * | 1986-05-20 | 1987-11-27 | Mitsubishi Chem Ind Ltd | 高品位コ−クスの製造方法 |
JPH01179292A (ja) * | 1987-12-29 | 1989-07-17 | Nec Corp | 半導体記憶装置 |
JPH029088A (ja) * | 1988-02-16 | 1990-01-12 | Texas Instr Inc <Ti> | 改良したバイ―cmos読取り/書込みメモリ |
JPH03228289A (ja) * | 1989-11-30 | 1991-10-09 | Hyundai Electron Ind Co Ltd | ダイナミックランダムアクセスメモリ用分離回路 |
-
1984
- 1984-06-28 JP JP59131872A patent/JPS6111991A/ja active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62250588A (ja) * | 1986-04-23 | 1987-10-31 | Hitachi Ltd | スタテイツク型ram |
JPS62273287A (ja) * | 1986-05-20 | 1987-11-27 | Mitsubishi Chem Ind Ltd | 高品位コ−クスの製造方法 |
JPH01179292A (ja) * | 1987-12-29 | 1989-07-17 | Nec Corp | 半導体記憶装置 |
JPH029088A (ja) * | 1988-02-16 | 1990-01-12 | Texas Instr Inc <Ti> | 改良したバイ―cmos読取り/書込みメモリ |
JPH03228289A (ja) * | 1989-11-30 | 1991-10-09 | Hyundai Electron Ind Co Ltd | ダイナミックランダムアクセスメモリ用分離回路 |
Also Published As
Publication number | Publication date |
---|---|
JPH0551997B2 (enrdf_load_stackoverflow) | 1993-08-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |