JPS61119670A - 膜形成方法 - Google Patents

膜形成方法

Info

Publication number
JPS61119670A
JPS61119670A JP24131384A JP24131384A JPS61119670A JP S61119670 A JPS61119670 A JP S61119670A JP 24131384 A JP24131384 A JP 24131384A JP 24131384 A JP24131384 A JP 24131384A JP S61119670 A JPS61119670 A JP S61119670A
Authority
JP
Japan
Prior art keywords
target
ions
substrate
film
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24131384A
Other languages
English (en)
Japanese (ja)
Other versions
JPH021221B2 (enExample
Inventor
Katsuya Okumura
勝弥 奥村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP24131384A priority Critical patent/JPS61119670A/ja
Publication of JPS61119670A publication Critical patent/JPS61119670A/ja
Publication of JPH021221B2 publication Critical patent/JPH021221B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP24131384A 1984-11-15 1984-11-15 膜形成方法 Granted JPS61119670A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24131384A JPS61119670A (ja) 1984-11-15 1984-11-15 膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24131384A JPS61119670A (ja) 1984-11-15 1984-11-15 膜形成方法

Publications (2)

Publication Number Publication Date
JPS61119670A true JPS61119670A (ja) 1986-06-06
JPH021221B2 JPH021221B2 (enExample) 1990-01-10

Family

ID=17072431

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24131384A Granted JPS61119670A (ja) 1984-11-15 1984-11-15 膜形成方法

Country Status (1)

Country Link
JP (1) JPS61119670A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63161168A (ja) * 1986-12-24 1988-07-04 Fujitsu Ltd イオンビ−ムスパツタによる成膜方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6029468A (ja) * 1983-07-28 1985-02-14 Toshiba Corp 膜形成方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6029468A (ja) * 1983-07-28 1985-02-14 Toshiba Corp 膜形成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63161168A (ja) * 1986-12-24 1988-07-04 Fujitsu Ltd イオンビ−ムスパツタによる成膜方法

Also Published As

Publication number Publication date
JPH021221B2 (enExample) 1990-01-10

Similar Documents

Publication Publication Date Title
JP3363919B2 (ja) サブストレート上に反応性の膜を付着する装置
US4710283A (en) Cold cathode ion beam source
JPS6330987B2 (enExample)
JP5373903B2 (ja) 成膜装置
EP0704878A1 (en) Uniform film thickness deposition of sputtered materials
US20090314206A1 (en) Sheet Plasma Film-Forming Apparatus
JPS61119670A (ja) 膜形成方法
JPH0660393B2 (ja) プラズマ集中型高速スパツタ装置
JPH0578831A (ja) 薄膜形成方法およびその装置
JPS63140078A (ja) スパツタリングによる成膜方法
JPS58199862A (ja) マグネトロン形スパツタ装置
JPH04231458A (ja) 電子ビーム蒸発源
JP2849771B2 (ja) スパッタ型イオン源
JPH07233473A (ja) マグネトロンスパッタ装置
KR19980032508A (ko) 스퍼트링장치 및 스퍼트링방법
JP2674995B2 (ja) 基板処理方法およびその装置
JPH07138743A (ja) イオンプレーティング装置
JPS63307272A (ja) イオンビ−ムスパツタ装置
JPH1136063A (ja) アーク式蒸発源
JPS6127464B2 (enExample)
JP4647476B2 (ja) 成膜装置
CN211897094U (zh) 一种物理溅射的硬件配置及系统
JPS6127463B2 (enExample)
JPH03150355A (ja) スパッタリング装置
JP2005187864A (ja) 成膜装置および成膜方法