JPS61116894A - 半導体レ−ザ - Google Patents
半導体レ−ザInfo
- Publication number
- JPS61116894A JPS61116894A JP23902584A JP23902584A JPS61116894A JP S61116894 A JPS61116894 A JP S61116894A JP 23902584 A JP23902584 A JP 23902584A JP 23902584 A JP23902584 A JP 23902584A JP S61116894 A JPS61116894 A JP S61116894A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- inp
- type
- semiconductor laser
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000005253 cladding Methods 0.000 claims description 17
- 238000010521 absorption reaction Methods 0.000 claims description 7
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims 1
- 230000006866 deterioration Effects 0.000 abstract description 4
- 238000010030 laminating Methods 0.000 abstract 1
- 230000010355 oscillation Effects 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 7
- 239000007791 liquid phase Substances 0.000 description 6
- 230000007774 longterm Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23902584A JPS61116894A (ja) | 1984-11-13 | 1984-11-13 | 半導体レ−ザ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23902584A JPS61116894A (ja) | 1984-11-13 | 1984-11-13 | 半導体レ−ザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61116894A true JPS61116894A (ja) | 1986-06-04 |
| JPH0156554B2 JPH0156554B2 (enrdf_load_stackoverflow) | 1989-11-30 |
Family
ID=17038760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23902584A Granted JPS61116894A (ja) | 1984-11-13 | 1984-11-13 | 半導体レ−ザ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61116894A (enrdf_load_stackoverflow) |
-
1984
- 1984-11-13 JP JP23902584A patent/JPS61116894A/ja active Granted
Non-Patent Citations (1)
| Title |
|---|
| NATIONAL TECHNICAL REPORT=1983 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0156554B2 (enrdf_load_stackoverflow) | 1989-11-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4426702A (en) | Semiconductor laser device | |
| US4841532A (en) | Semiconductor laser | |
| JPS6348888A (ja) | 半導体レ−ザ装置 | |
| JPS61116894A (ja) | 半導体レ−ザ | |
| JPH0474877B2 (enrdf_load_stackoverflow) | ||
| EP0155853B1 (en) | Window vsis semiconductor laser | |
| JPS61164287A (ja) | 半導体レ−ザ | |
| JPH0156553B2 (enrdf_load_stackoverflow) | ||
| JPS59119781A (ja) | 半導体レ−ザの製造方法 | |
| JP2940158B2 (ja) | 半導体レーザ装置 | |
| JPS63124484A (ja) | 半導体レ−ザ素子 | |
| JPS60217689A (ja) | 半導体発光素子の製造方法 | |
| JPS61144895A (ja) | 半導体レ−ザ | |
| JPH02283085A (ja) | 半導体レーザ | |
| KR970001895B1 (ko) | 고출력 레이저 다이오드 | |
| JPS60198884A (ja) | 半導体レ−ザ素子 | |
| JPS59200484A (ja) | 半導体レ−ザ | |
| JPS6354234B2 (enrdf_load_stackoverflow) | ||
| JPH0350885A (ja) | 埋め込み型半導体光素子 | |
| JPS62281384A (ja) | 半導体レ−ザ素子およびその製造方法 | |
| JPS60136281A (ja) | 半導体レ−ザの製造方法 | |
| JPH03116991A (ja) | 半導体レーザ装置 | |
| JPS601880A (ja) | 半導体レ−ザ | |
| JPS63287080A (ja) | 半導体レ−ザの製造方法 | |
| JPS63164385A (ja) | 半導体レ−ザ装置 |