JPS61116885A - 光電変換半導体装置作製方法 - Google Patents

光電変換半導体装置作製方法

Info

Publication number
JPS61116885A
JPS61116885A JP59238983A JP23898384A JPS61116885A JP S61116885 A JPS61116885 A JP S61116885A JP 59238983 A JP59238983 A JP 59238983A JP 23898384 A JP23898384 A JP 23898384A JP S61116885 A JPS61116885 A JP S61116885A
Authority
JP
Japan
Prior art keywords
mask
groove
photoelectric conversion
conductive film
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59238983A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0554711B2 (enrdf_load_html_response
Inventor
Kaoru Koyanagi
小柳　かおる
Toshiji Hamaya
敏次 浜谷
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP59238983A priority Critical patent/JPS61116885A/ja
Publication of JPS61116885A publication Critical patent/JPS61116885A/ja
Publication of JPH0554711B2 publication Critical patent/JPH0554711B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
JP59238983A 1984-11-12 1984-11-12 光電変換半導体装置作製方法 Granted JPS61116885A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59238983A JPS61116885A (ja) 1984-11-12 1984-11-12 光電変換半導体装置作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59238983A JPS61116885A (ja) 1984-11-12 1984-11-12 光電変換半導体装置作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP6177697A Division JPH07202229A (ja) 1994-07-07 1994-07-07 選択的被膜形成方法

Publications (2)

Publication Number Publication Date
JPS61116885A true JPS61116885A (ja) 1986-06-04
JPH0554711B2 JPH0554711B2 (enrdf_load_html_response) 1993-08-13

Family

ID=17038185

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59238983A Granted JPS61116885A (ja) 1984-11-12 1984-11-12 光電変換半導体装置作製方法

Country Status (1)

Country Link
JP (1) JPS61116885A (enrdf_load_html_response)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07202229A (ja) * 1994-07-07 1995-08-04 Semiconductor Energy Lab Co Ltd 選択的被膜形成方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5712568A (en) * 1980-06-02 1982-01-22 Rca Corp Method of producing solar battery
JPS5753986A (enrdf_load_html_response) * 1980-07-25 1982-03-31 Eastman Kodak Co
JPS58111380A (ja) * 1981-12-24 1983-07-02 Seiko Epson Corp アモルフアスシリコン太陽電池の製造方法
JPS59194480A (ja) * 1983-04-18 1984-11-05 Matsushita Electric Ind Co Ltd 太陽電池の製造法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5712568A (en) * 1980-06-02 1982-01-22 Rca Corp Method of producing solar battery
JPS5753986A (enrdf_load_html_response) * 1980-07-25 1982-03-31 Eastman Kodak Co
JPS58111380A (ja) * 1981-12-24 1983-07-02 Seiko Epson Corp アモルフアスシリコン太陽電池の製造方法
JPS59194480A (ja) * 1983-04-18 1984-11-05 Matsushita Electric Ind Co Ltd 太陽電池の製造法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07202229A (ja) * 1994-07-07 1995-08-04 Semiconductor Energy Lab Co Ltd 選択的被膜形成方法

Also Published As

Publication number Publication date
JPH0554711B2 (enrdf_load_html_response) 1993-08-13

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term