JPS6111463B2 - - Google Patents
Info
- Publication number
- JPS6111463B2 JPS6111463B2 JP53154022A JP15402278A JPS6111463B2 JP S6111463 B2 JPS6111463 B2 JP S6111463B2 JP 53154022 A JP53154022 A JP 53154022A JP 15402278 A JP15402278 A JP 15402278A JP S6111463 B2 JPS6111463 B2 JP S6111463B2
- Authority
- JP
- Japan
- Prior art keywords
- capillary
- bonding
- bonded
- lead wire
- wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 19
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 16
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000002788 crimping Methods 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
- H01L2224/78302—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
- H01L2224/85207—Thermosonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Description
【発明の詳細な説明】
本発明は超音波法と熱圧着法を併用したワイヤ
ボンデイング方法の改良に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in a wire bonding method using both an ultrasonic method and a thermocompression method.
半導体装置、特に電卓用や時計用のLSI（大規
模集積回路）においては価格低減のために樹脂を
主体としたパツケージ又は基板が最近多く用いら
れている。一般にこの種の樹脂パツケージは耐熱
性に欠けるため、半導体素子の電極とパツケージ
の端子電極とをリードワイヤ接続するワイヤボン
デイングにおいては熱圧着法よりも加熱温度を低
くすることのできる超音波熱圧着併用ワイヤボン
デイング法が採用されている。この併用ワイヤボ
ンデイング法においては熱圧着ボンデイング法と
異なり、圧着工具を構成するキヤピラリー内部か
ら被ボンデイング体上に供給されたリードワイヤ
はキヤピラリーの先端部又はウエツジ
（Wedge）部に接触する部分のみが被ボンデイン
グ体に接合し、そして上記先端部によつてリード
ワイヤが完全に押しつぶされる状態にならないと
満足すべき接合が得られないことが知られてい
る。例えば第１図に示すようにキヤピラリー１が
被ボンデイング体２に対して垂直に接触している
場合には、キヤピラリー１内部から被ボンデイン
グ体２上に供給されて、これらの間に挟持された
金ワイヤ３はキヤピラリーの先端部（ウエツジ
部）からボンデイングに必要な圧力を無駄なく加
えられ、その結果金ワイヤ３は被ボンデイング体
２に完全に接合する。この状態において、第１図
に向つて垂直線Ｐの右側に位置するキヤピラリー
１の先端部の下側には金ワイヤ３が存在しないた
め、上記先端部は被ボンデイング体２にわずかに
接触するか又は少し浮き上つている。しかし第２
図に示すようにキヤピラリー１がプラス側、即ち
垂直線Ｐの右側方向に傾斜した状態でボンデイン
グを実施した場合にはキヤピラリー１の右側部分
の先端部が被ボンデイング体２に接触してこれに
圧力を加えるため、金ワイヤ３に接触するキヤピ
ラリー１の左側部分の先端部は金ワイヤ３を充分
に押しつぶすことができず、したがつてボンデイ
ング不良が発生しやすくなり、半導体装置の歩ど
まりおよび信頼性の向上に極めて不利である。こ
のように、第１図に示すように、キヤピラリー１
が被ボンデイング体２に正確に垂直となつていれ
ば問題はないのであるが、実際には、半導体基板
の表面が正確に水平でなかつたり、被ボンデイン
グ体例えば電極面のはんだ層の表面が凹凸状とな
つていたり、或いはキヤピラリーの取付け方に不
都合があつたりして、第２図に示すような状態と
なることがしばしばある。このような状態は、実
際にはかなり高い頻度で、例えば約５〜６％の割
合で生ずる。 Recently, packages or substrates mainly made of resin have been increasingly used in semiconductor devices, especially LSIs (Large Scale Integrated Circuits) for calculators and watches, in order to reduce costs. Generally, this type of resin package lacks heat resistance, so wire bonding, which connects the electrodes of the semiconductor element and the terminal electrodes of the package with lead wires, uses ultrasonic thermocompression bonding, which can lower the heating temperature than thermocompression bonding. Wire bonding method is used. In this combined wire bonding method, unlike the thermocompression bonding method, only the portion of the lead wire that comes into contact with the tip or wedge of the capillary is exposed when the lead wire is supplied onto the bonded object from inside the capillary that constitutes the crimping tool. It is known that a satisfactory bond cannot be obtained unless the lead wire is completely crushed by the tip when bonded to the bonding body. For example, when the capillary 1 is in vertical contact with the object 2 to be bonded as shown in FIG. The pressure necessary for bonding is applied to the wire 3 from the tip (wedge part) of the capillary without waste, and as a result, the gold wire 3 is completely bonded to the object 2 to be bonded. In this state, since there is no gold wire 3 below the tip of the capillary 1 located on the right side of the vertical line P as viewed in FIG. Or slightly raised. But the second
As shown in the figure, when bonding is performed with the capillary 1 tilted to the positive side, that is, to the right of the vertical line P, the tip of the right side of the capillary 1 contacts the bonded object 2 and applies pressure to it. As a result, the tip of the left side of the capillary 1 that comes into contact with the gold wire 3 cannot sufficiently crush the gold wire 3, and therefore bonding defects are likely to occur, reducing the yield and reliability of semiconductor devices. This is extremely disadvantageous to improving the results. In this way, as shown in FIG.
There is no problem if the surface of the bonding target 2 is exactly perpendicular, but in reality, the surface of the semiconductor substrate may not be exactly horizontal, or the surface of the bonding target, for example, the solder layer on the electrode surface, may be uneven. The condition shown in FIG. 2 often arises because the capillary is in a bad shape or because the way the capillary is installed is inconvenient. Such conditions occur quite frequently in practice, for example at a rate of about 5-6%.
本発明はリードワイヤをキヤピラリーの先端部
で充分に押しつぶすことのできるワイヤボンデイ
ング方法を提供することを目的とするものであつ
て、キヤピラリー内部から導出したリードワイヤ
を被ボンデイング体とキヤピラリーの先端部との
間に挟持し、熱と圧力と超音波とを同時に加える
ことにより被ボンデイング体にリードワイヤを接
続することから成る超音波熱圧着併用ワイヤボン
デイング方法において、リードワイヤが十分に押
しつぶされるまでキヤピラリーのリードワイヤと
反対側の先端部分が被ボンデイング体に接触しな
いように、キヤピラリー又は被ボンデイング体を
上記挾持されたリードワイヤの方向に約２〜６度
傾けてボンデイングすることを特徴とする。 An object of the present invention is to provide a wire bonding method that can sufficiently crush a lead wire at the tip of a capillary, and in which the lead wire led out from inside the capillary is bonded to an object to be bonded and the tip of the capillary. In the ultrasonic thermocompression wire bonding method, which consists of connecting a lead wire to a bonded object by simultaneously applying heat, pressure, and ultrasonic waves to the capillary, the lead wire is Bonding is performed by tilting the capillary or the object to be bonded about 2 to 6 degrees in the direction of the clamped lead wire so that the tip portion on the opposite side of the lead wire does not contact the object to be bonded.
第３図は本発明の一態様を示す部分断面図であ
つて、キヤピラリー１はワイヤボンデイング時に
おいてキヤピラリー１の先端部と被ボンデイング
体２との間に挾持された金ワイヤ３の方向、即ち
垂直線Ｐの左側方向、に約２〜６度傾斜してい
る。 FIG. 3 is a partial sectional view showing one embodiment of the present invention, in which the capillary 1 is oriented vertically in the direction of the gold wire 3 held between the tip of the capillary 1 and the bonded object 2 during wire bonding. It is inclined about 2 to 6 degrees to the left of line P.
キヤピラリー１を傾斜させる代りに被ボンデイ
ング体２を上記挾持された金ワイヤ３の方向に約
２〜６度傾斜させてボンデイングを実施すること
もできる。なお第３図において第１図および第２
図と同一個所は同一符号にて示す。 Instead of tilting the capillary 1, bonding can also be carried out by tilting the bonding object 2 by about 2 to 6 degrees in the direction of the sandwiched gold wires 3. In addition, in Figure 3, Figures 1 and 2
The same parts as in the figure are indicated by the same symbols.
上述した本発明方法によればリードワイヤはボ
ンデイング時において常にキヤピラリーの先端部
から充分な押圧力を与えられて完全に押しつぶさ
れる。したがつてボンデイング不良は防止され、
半導体装置の歩どまりおよび信頼性の向上が達成
される。 According to the above-described method of the present invention, the lead wire is always subjected to sufficient pressing force from the tip of the capillary during bonding and is completely crushed. Therefore, bonding defects are prevented,
Improvements in yield and reliability of semiconductor devices are achieved.
なお超音波熱圧着併用ワイヤボンデイングにお
いては一般にボンデイング体が半導体素子の電極
である第１のボンデイングをボール法によつて実
施し、被ボンデイング体がパツケージの端子電極
である第２のボンデイングをステイツチ法によつ
て実施している。本発明の方法はステイツチ法に
適用されることが望ましい。また本発明方法にお
いて、キヤピラリーの傾斜はこれを支持するキヤ
ピラリーアームを傾斜させることによつて実施さ
れ、被ボンデイング体の傾斜はこれを支持するス
テージ（台）を傾斜させることによつて実施され
る。 In wire bonding combined with ultrasonic thermocompression bonding, the first bonding where the bonding object is an electrode of a semiconductor element is generally carried out by the ball method, and the second bonding where the bonding object is a terminal electrode of a package is carried out using the staple method. This is being carried out by The method of the present invention is preferably applied to the Stitch method. Furthermore, in the method of the present invention, the capillary is tilted by tilting the capillary arm that supports it, and the bonded object is tilted by tilting the stage that supports it. Ru.
第１図および第２図は従来のそして第３図は本
発明のワイヤボンデイング法におけるキヤピラリ
ーと被ボンデイング体とリードワイヤとの接触状
態をそれぞれ示す断面図である。
１…キヤピラリー、２…被ボンデイング体、３
…リードワイヤ、Ｐ…垂直線。
FIGS. 1 and 2 are sectional views showing the state of contact between the capillary, the object to be bonded, and the lead wire in the conventional wire bonding method and FIG. 3 in the wire bonding method of the present invention, respectively. 1... Capillary, 2... Bonded body, 3
...Lead wire, P...Vertical line.
Claims (1)
を被ボンデイング体とキヤピラリーの先端部との
間に挟持し、熱と圧力と超音波とを同時に加える
ことにより、リードワイヤを被ボンデイング体に
接続することから成る超音波熱圧着併用ワイヤボ
ンデイング方法において、リードワイヤが十分に
押しつぶされるまでキヤピラリーのリードワイヤ
と反対側の先端部分が被ボンデイング体に接触し
ないように、キヤピラリー又は被ボンデイング体
を上記挟持されたリードワイヤの方向に約２〜６
度傾けてボンデイングすることを特徴とする上記
方法。1 A method of ultrasonic bonding that consists of sandwiching the lead wire led out from inside the capillary between the object to be bonded and the tip of the capillary, and connecting the lead wire to the object to be bonded by simultaneously applying heat, pressure, and ultrasonic waves. In the wire bonding method combined with sonic thermocompression, the capillary or the body to be bonded is placed between the clamped lead wires so that the tip of the capillary opposite to the lead wire does not come into contact with the body to be bonded until the lead wire is sufficiently crushed. Approximately 2-6 in the direction
The above method is characterized in that bonding is performed at a tilt angle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15402278A JPS5580327A (en) | 1978-12-13 | 1978-12-13 | Wirebonding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15402278A JPS5580327A (en) | 1978-12-13 | 1978-12-13 | Wirebonding |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5580327A JPS5580327A (en) | 1980-06-17 |
| JPS6111463B2 true JPS6111463B2 (en) | 1986-04-03 |
Family
ID=15575186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15402278A Granted JPS5580327A (en) | 1978-12-13 | 1978-12-13 | Wirebonding |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5580327A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6164523A (en) * | 1998-07-01 | 2000-12-26 | Semiconductor Components Industries, Llc | Electronic component and method of manufacture |
-
1978
- 1978-12-13 JP JP15402278A patent/JPS5580327A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5580327A (en) | 1980-06-17 |
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