JPS61112351A - Semiconductor device - Google Patents

Abstract

PURPOSE:To reduce a temperature difference between an acceptable block and a defective block due to heat generation in a circuit on the operation of a pellet, and to prevent the generation of stress between both blocks by connecting even the defective block to a power supply wiring. CONSTITUTION:A plurality of circuit blocks 9 are electrically connected mutu ally to a wafer, thus forming a full wafer LSI 2. Even a defective block 10 is connected electrically to a power supply wiring 14 regarding a power supply electrode 13a among electrode 13 shaped onto the upper surface of an silicon substrate 12, thus supplying currents. Signal electrodes disposed in the left direction of the power supply electrode 13a is connected electrically to a second wiring 14a in an acceptable block 11, but they are unnecessitated in the defective block, thus resulting in no electrical connection.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to the formation of wiring in pellets, and particularly to a technique that is effective when applied to improving the reliability of semiconductor devices.

[Background technology]

As electronic equipment systems such as large-scale computers become larger, long wiring such as wiring between semiconductor devices constituting the system or wiring between mounting boards of semiconductor devices is becoming increasingly difficult to increase the speed of signal processing in the large-scale computers. This becomes a major hindrance and also causes a waste of electricity.

Therefore, by forming circuit blocks corresponding to the plurality of pellets mounted on the semiconductor devices constituting the Nostem on the same large pellet, it is possible to eliminate long wiring between the semiconductor devices, etc. 4. It is possible to increase the density of the system, so it is possible to improve the performance of large needle g machines and at the same time reduce the size of the device. Ru.

Based on this idea, a large number of circuit blocks are formed on a single wafer, wiring between each block is also performed on the wafer, and the entire wafer forms one LSI (large-scale integrated circuit). (hereinafter referred to as full wafer LSI)
).

By using one or several full wafer LSIs, it is possible to make even a high-speed ultra-large computer into an extremely compact device.

Generally, wafers are made of a single crystal such as silicon, and in order to obtain such a large wafer as described above, it is necessary to form a large diameter crystal.

However, it is difficult to obtain a perfect single crystal with no lattice defects, and this tendency increases as the diameter increases.
Even if SI is formed, bad blocks will still occur at unspecified locations. Therefore, usually only good blocks are connected electrically to complete the full wafer LSI.
form.

However, when a semiconductor device equipped with the full wafer described in 1iii is operated, heat is generated only in the electrically conductive good blocks, so distortion due to thermal expansion occurs between the good blocks and the bad blocks. This can cause pellet cracks and other problems that reduce the reliability of the semiconductor device. The inventors have discovered that this phenomenon becomes particularly problematic when good blocks or bad blocks are locally unevenly distributed.

Note that an example of a patent related to a full wafer LSI is Japanese Patent Publication No. 5867/1983.

(Object of the Invention) An object of the present invention is to apply the wiring formation of a pellet, particularly to the wiring formation of a large pellet formed of a plurality of circuit blocks, to improve the reliability of a semiconductor device equipped with the pellet. Our goal is to provide effective technology.

The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

[Summary of the invention]

A brief overview of typical inventions disclosed in this application is as follows.

In other words, for a semiconductor device mounted with a pellet in which multiple circuit blocks are formed, by connecting the power supply wiring even to a defective block that normally does not have electrical connection, the heat generation of the pellet when the pellet is operated can be reduced. Due to this, it is possible to prevent the temperature difference between the good blocks and the bad blocks. Also, thermal stress can be effectively prevented from occurring in the pellets, and the above object can be achieved.

[Example 1] FIG. 1 is an enlarged partial cross-sectional view schematically showing a pellet mounted on a semiconductor device according to Example 1 of the present invention.

FIG. 2 is a cross-sectional view of the semiconductor device of this embodiment taken approximately at its center.

The semiconductor device of Example 1 is made of a ceramic material (Japanese Patent Laid-Open No. 57-25
A package substrate I is formed using a package substrate (see Japanese Patent No. 91), and a full wafer LSI 2 formed of the entire wafer is mounted on the substrate I using gold-silicon eutectic 3, and the full wafer LSI 2 is formed around the substrate I. It is electrically connected to the external terminal 4 around the substrate via a wire 5 using a bonding panod, and a cap 6 made of a material mainly composed of silicon carbide is bonded to the substrate l using a low melting point glass 7. By doing so, the inside of the puff cage is hermetically sealed.

A liquid-cooled heat sink 8 made of aluminum is attached to the front surface of the substrate 1 with adhesive to enhance the heat dissipation effect and improve the reliability of the semiconductor device. This heat sink 8 exhibits a strong cooling effect by flowing liquid such as water in the direction of the arrow.

As shown in FIG. 3, the semiconductor device of the first embodiment is equipped with a large pellet made of one wafer, and a plurality of circuit blocks 9 are electrically connected to each other to form a full wafer. This is where LSI2 is formed.

In the full wafer LSI 2 according to the first embodiment, the defective blocks 10 indicated by diagonal lines in FIG. 3 are concentrated in the lower right half of the figure.

This defective block will be removed after the circuit block formation is completed.
This can be easily detected by performing a probe test on the electrodes of each block, and normally there is no need to supply power to the defective block, so no electrical connection is made to the defective block.

However, in a good block that is electrically connected, a heat generation phenomenon occurs during operation, and the temperature of the good block increases, resulting in a temperature difference between the good block and the bad block.

This temperature difference causes stress to be generated between the blocks, which in turn causes pellet cracks and other problems that reduce the reliability of the semiconductor device.

The stress caused by the temperature difference is a problem because it becomes especially large when the defective blocks are formed in a highly uneven manner (unevenly distributed) as shown in FIG.

In the first embodiment, in order to solve the above problem, the defective block is also electrically connected to the power supply wiring as shown in FIG. 1, so that a predetermined current is supplied to heat the defective block. It has been made possible.

That is, in FIG. 1, the characteristics of the full wafer LSI mounted on the semiconductor device of this embodiment 1 are shown by two defective blocks 10 and good blocks 11, which are indicated by dashed lines. Among the electrodes 13 formed on the upper surface of the Noricon substrate 12, the electric i! I
For X TM, m 13 a, tIIIi! even in bad blocks! By electrically connecting it to the wiring 14, can it also be connected to the defective block IO? It is designed so that it can supply 100 liters of water.

Note that among the electrodes in both blocks, the power supply electrode 13
The signal electrodes arranged to the left of a are good block 1.
In No. 1, it is electrically connected to the second distribution kA l 4 a, but in the defective block, the electrical connection is not made because it is unnecessary.

The t8ii and wiring formed on the upper surface of the silicon substrate 12 can be easily formed by ordinary lithography technology, for example, computer-controlled electron beam straight groove technology.

That is, after the circuit block is formed, a first wiring is formed by vapor deposition of aluminum on an insulating layer (not shown) on the upper surface of the silicon substrate 12, and then a first insulating layer 15 is formed of silicon nitride. A predetermined position of the insulating layer 15 is etched to expose a part of the first wiring to form the electrodes 13 such as the power supply electrode j3a, and then aluminum is vapor deposited to connect to the electrode 13 to form the second wiring 14. do. After that, through the same process, the second insulator 116, the power supply wiring 14 and the third
This is completed by forming an insulating layer 17.

For bad blocks, NB1t8i! 13a, the process described above is performed, and the connection with the power supply wiring 14 is made with J! However, the electrodes 13 for other signals etc. are not electrically connected.

[Example 2] Fig. 4 is a plan view showing the distribution of good and defective circuit blocks for a full wafer LSI which is made up of 5M in a half-quad AM, which is Example 2 of the present invention. .

The semiconductor device of the second embodiment is similar to the first embodiment, and the only difference is the distribution of good blocks and bad blocks. As described above, even when the defective blocks IO are concentrated in the center, the present invention is applicable to this case and is effective.

〔effect〕

(l) For semiconductor devices mounted with pellets on which multiple circuit blocks are formed, by connecting defective blocks to power supply wiring, good blocks and defective blocks due to heat generation in the circuit when the pellet is operated. Since it is possible to reduce or prevent the temperature difference between the two blocks, it is possible to prevent stress from occurring between both blocks due to the temperature difference.

(2) The fi+ can prevent the occurrence of pellet cracks and the like, thereby improving the reliability of the semiconductor device.

(3) In the case where defective blocks are partially unevenly distributed in the large plate 7) in which a large number of circuit blocks are formed, particularly excellent effects can be obtained by applying the above-mentioned fil.

(4) It is extremely effective when the pellet described in (3) above is a full wafer Sl.

Although the invention made by the present inventor has been specifically explained above based on Examples, it goes without saying that the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. Nor.

For example, although only a full wafer LSI has been described as a pellet, the present invention is not limited to this and can be applied to any pellet in which a plurality of circuit blocks are formed.

In addition, for a full wafer, the distribution state of defective blocks was explained as shown in FIG. 3 or FIG.
These are just typical patterns.
It goes without saying that the patterns are not limited to these patterns.

Furthermore, the bad blocks are not limited to those that are formed in large numbers adjacent to each other, and the effect is greatest when applied to blocks that are formed adjacent to each other. This is naturally applicable.

[Application field]

In the above explanation, the invention made by the present inventor was mainly applied to a semiconductor device made of a ceramic package, which is the background field of application, but the invention is not limited to this. If the means are appropriate, this technique can also be applied to semiconductor devices whose substrates are made of resin, such as printed circuit boards.

[Brief explanation of the drawing]

FIG. 1 is a schematic partial cross-sectional view showing a pellet mounted on a semiconductor device of Example 1 according to the present invention, FIG. 2 is a cross-sectional view showing the semiconductor device of Example 1, and FIG. A schematic plan view showing a pellet applied to Example 1. FIG. 4 is a schematic plan view showing a pellet mounted on a semiconductor device according to Example 2 of the present invention.

Flies...Substrate, 2...Full wafer LSI, 3...
Gold-Noricon, 4. External terminal, 5. Wire, 6. Cap, 7. Low melting point glass, 8.
Heat nonch, 9... Circuit block, 10... Bad block, 11... Good block, 12... Silicon IT, 13... Electrode, 13a... Power supply electrode, 14...
...power supply wiring, 14a...second wiring, 15...first
Insulating layer, 16... second insulating layer, 17... third insulating layer. Agent: Patent attorney Akira Takahashi ＼. X7・ゝ. ' Figure 1 Figure 2

Claims (1)

[Scope of Claims] 1. A semiconductor device on which a pellet formed of a plurality of circuit blocks is mounted, in which even defective blocks are electrically connected to power supply wiring. 2. The semiconductor device according to claim 1, wherein the pellet is a full wafer LSI. 3. The semiconductor device according to claim 1 or 2, wherein the defective blocks are unevenly distributed in the pellet.