JPH05267500A - Resin-sealed semiconductor device - Google Patents
Resin-sealed semiconductor deviceInfo
- Publication number
- JPH05267500A JPH05267500A JP6345192A JP6345192A JPH05267500A JP H05267500 A JPH05267500 A JP H05267500A JP 6345192 A JP6345192 A JP 6345192A JP 6345192 A JP6345192 A JP 6345192A JP H05267500 A JPH05267500 A JP H05267500A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- lead frame
- heat sink
- semiconductor device
- insulator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体装置に係わり、特
にヒートシンクを有し複数の通電電流の大きい半導体素
子を搭載する樹脂封止型半導体装置に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a resin-encapsulated semiconductor device having a heat sink and mounting a plurality of semiconductor elements having a large energizing current.
【０００２】[0002]
【従来の技術】通電電流の大きい半導体素子を有する樹
脂封止型半導体装置は、該半導体素子の機能の安定化及
び異常加熱を防止するためヒートシンクを設けた構造と
なっている。１個の半導体素子のみを有する場合、ヒー
トシンク上を該半導体素子のアイランド領域とし、上記
半導体素子をヒートシンク上に直接載置している。2. Description of the Related Art A resin-encapsulated semiconductor device having a semiconductor element with a large energizing current has a structure provided with a heat sink for stabilizing the function of the semiconductor element and preventing abnormal heating. In the case of having only one semiconductor element, the heat sink is used as an island region of the semiconductor element, and the semiconductor element is directly mounted on the heat sink.
【０００３】しかしながら、近年の集積化に伴い、複数
の通電電流の大きい半導体素子を有する樹脂封止型半導
体装置を形成する必要がある。このような場合、図３に
示すような構造である。リードフレーム３１をヒートシ
ンク３２上に固定ピン３３により機械的に固定させる。
ヒートシンク３２の上方に設置されたリードフレーム３
１上のアイランドに各々の半導体素子３４をマウントさ
れ、金属細線３５にてワイヤーボンディングされ、モー
ルド樹脂３６により樹脂封止されている。However, with the recent integration, it is necessary to form a resin-sealed semiconductor device having a plurality of semiconductor elements having a large energization current. In such a case, the structure is as shown in FIG. The lead frame 31 is mechanically fixed on the heat sink 32 by fixing pins 33.
Lead frame 3 installed above the heat sink 32
Each semiconductor element 34 is mounted on the island above 1, wire-bonded with a fine metal wire 35, and resin-sealed with a mold resin 36.
【０００４】ここで、ヒートシンク３２は銅系金属にて
形成されている。そのため、ヒートシンク３２とリード
フレーム３１を機械的に固定する工程の際に、ヒートシ
ンク３２とリードフレーム３１が接触し、絶縁が必要な
リード間が電気的に短絡することがある。また、上記工
程において正常に固定された場合でも、モールド樹脂３
６により樹脂封止工程において、ヒートシンク３２を有
する構造のため金型のキャビティ内のモールド樹脂３６
の流れが、パッケージの上下で均等に流れず、リードフ
レーム３１がヒートシンク３２側に押されてしまい、ヒ
ートシンク３２とリードフレーム３１が接触し、電気的
に短絡することがある。そのため、モールド樹脂３６の
流れに影響されないように、パッケージ内部のリードの
形状を、長さを短くしかつ幅を太くした強固なリードフ
レーム３１とすると、リードフレーム３１を微細加工す
ることができない。Here, the heat sink 32 is formed of a copper-based metal. Therefore, in the process of mechanically fixing the heat sink 32 and the lead frame 31, the heat sink 32 and the lead frame 31 may come into contact with each other, and the leads requiring insulation may be electrically short-circuited. In addition, even when the resin is properly fixed in the above process, the mold resin 3
6 in the resin sealing step, the mold resin 36 in the cavity of the mold due to the structure having the heat sink 32.
May not flow evenly above and below the package, the lead frame 31 may be pushed toward the heat sink 32, and the heat sink 32 and the lead frame 31 may come into contact with each other and electrically short-circuit. Therefore, if the shape of the lead inside the package is a strong lead frame 31 having a short length and a wide width so as not to be affected by the flow of the molding resin 36, the lead frame 31 cannot be finely processed.
【０００５】また、図４に示すように、金属パターン３
７がパターニングされている絶縁物３８、例えばセラミ
ックを、半田等によりヒートシンク３２上に接着し、金
属パターン３７上のアイランドに各々半導体素子３４を
マウントされる構造の半導体装置もある。しかしなが
ら、図３に示される構造よりも工程が増えることやコス
トアップなど問題がある。Further, as shown in FIG. 4, the metal pattern 3
There is also a semiconductor device having a structure in which an insulator 38 in which 7 is patterned, for example, a ceramic is adhered onto the heat sink 32 by solder or the like, and the semiconductor element 34 is mounted on each island on the metal pattern 37. However, there are problems that the number of steps is increased and the cost is increased as compared with the structure shown in FIG.
【０００６】[0006]
【発明が解決しようとする課題】上述のように、リード
フレームとヒートシンクとの接触が、リードフレームを
ヒートシンクに固定する工程または樹脂封止の工程の際
に発生するため、各半導体素子毎に絶縁することが困難
となる。またヒートシンクとリードフレームが電気的に
短絡していなくてもそのギャップは小さく（数μｍ程
度）、耐圧の高い半導体素子を搭載した場合には、リー
ドフレームとヒートシンクの間に存在する樹脂の厚さが
小さいため半導体素子動作時に半導体素子裏面電位とヒ
ートシンク電位（一般的にグランド）の間でリークもし
くは絶縁不良を招く恐れが多分にある。それ故に、本発
明は高信頼性かつ低コストな、通電電流の大きい半導体
素子を複数搭載する樹脂封止型半導体装置を提供するこ
とを目的とする。As described above, since the contact between the lead frame and the heat sink occurs during the step of fixing the lead frame to the heat sink or the step of resin sealing, it is necessary to insulate each semiconductor element from each other. It becomes difficult to do. Even if the heat sink and the lead frame are not electrically short-circuited, the gap is small (about several μm), and when a semiconductor element with high withstand voltage is mounted, the thickness of the resin present between the lead frame and the heat sink. Is small, there is a possibility that leakage or insulation failure may occur between the back surface potential of the semiconductor element and the heat sink potential (generally the ground) during operation of the semiconductor element. Therefore, an object of the present invention is to provide a highly reliable and low cost resin-sealed semiconductor device having a plurality of semiconductor elements with a large energization current mounted therein.
【０００７】[0007]
【課題を解決するための手段】本発明によれば、ヒート
シンンク上に絶縁物、例えばセラミック等をコーティン
グし、上記絶縁物を介してヒートシンク上にリードフレ
ームを固定する。ここで、リードフレームは半導体素子
を載置するためのアイランド領域を複数個有している。According to the present invention, a heat sink is coated with an insulating material such as ceramic, and the lead frame is fixed on the heat sink through the insulating material. Here, the lead frame has a plurality of island regions for mounting semiconductor elements.
【０００８】[0008]
【作用】リードフレームがヒートシンクと絶縁物を介し
て固定されるため、リードフレームをヒートシンクに固
定する工程及び樹脂封止工程において発生するリードフ
レームとヒートシンクの接触を防ぐことができる。更
に、耐圧の高い半導体素子を搭載する場合においても、
同様に形成できる。つまり、リードフレーム上に載置さ
れる各半導体素子間を絶縁することができる。Since the lead frame is fixed to the heat sink via the insulator, it is possible to prevent contact between the lead frame and the heat sink that occurs in the step of fixing the lead frame to the heat sink and the resin sealing step. Furthermore, even when mounting a semiconductor element with a high breakdown voltage,
It can be formed similarly. That is, it is possible to insulate the semiconductor elements mounted on the lead frame from each other.
【０００９】また、半導体素子とヒートシンクが熱伝導
率の悪い樹脂を介することなく、絶縁物を介して接する
ため、放熱効率が高くなり、より信頼性の高い樹脂封止
型半導体装置を提供することができる。Further, since the semiconductor element and the heat sink are in contact with each other via the insulator, not via the resin having a low thermal conductivity, the heat dissipation efficiency is improved, and a more reliable resin-sealed semiconductor device is provided. You can
【００１０】[0010]
【実施例】以下、本発明の第１実施例を図１を用いて説
明する。ヒートシンク１１上にセラミック等の絶縁物１
２をコーティングし、リードフレーム１３をヒートシン
ク１１に固定ピン１４により固定させる。この時、ヒー
トシンク１１に固定されるリードフレーム１３と絶縁物
１２上のリードフレーム１３は同一面にあり、固定ピン
１４によりリードフレーム１３がヒートシンク１１に固
定されることにより、機械的に絶縁物１２とリードフレ
ーム１３が固定される。その後、絶縁物１２上のリード
フレーム１３に設けられたアイランドに、それぞれ半導
体素子１５を導電性接着剤または半田等（図示せず）で
固定し、金属細線１６によりワイヤボンディングし、エ
ポキシ樹脂またはモールド樹脂１７等により樹脂封止す
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of the present invention will be described below with reference to FIG. Insulator 1 such as ceramics on the heat sink 11
2 is coated, and the lead frame 13 is fixed to the heat sink 11 by the fixing pin 14. At this time, the lead frame 13 fixed to the heat sink 11 and the lead frame 13 on the insulator 12 are on the same surface, and the lead frame 13 is fixed to the heat sink 11 by the fixing pin 14, whereby the insulator 12 is mechanically fixed. The lead frame 13 is fixed. Thereafter, the semiconductor elements 15 are fixed to the islands provided on the lead frame 13 on the insulator 12 with a conductive adhesive or solder (not shown), and wire-bonded with the fine metal wires 16, and epoxy resin or mold is used. The resin is sealed with the resin 17 or the like.
【００１１】次に、第２実施例を図２より、第１実施例
と異なる部分のみを説明する。リードフレーム１３をヒ
ートシンク１１に固定ピン１４による固定と同時に行わ
れるリードフレーム１３と絶縁物１２との固定を、機械
的固定のみならず接着剤１８により固定する。接着剤１
８は少なくとも、リードフレーム１３上に設けられてい
るアイランド領域下に接着されていれば良く、この場合
においても、ヒートシンク１１に固定されるリードフレ
ーム１３と絶縁物１２上のリードフレーム１３は同一面
となる。接着剤１８を用いることにより、より安定した
構造を有する半導体装置を形成することができる。いず
れにおいても、ヒートシンク１１上に絶縁物１２をコー
ティングする工程を加えるだけで、各半導体素子間を絶
縁することができる。Next, the second embodiment will be described with reference to FIG. 2 only as to the portions different from the first embodiment. The fixing of the lead frame 13 and the insulator 12 to the heat sink 11 at the same time as the fixing of the lead frame 13 by the fixing pin 14 is performed by the adhesive 18 as well as the mechanical fixing. Adhesive 1
It suffices that at least 8 is adhered below the island region provided on the lead frame 13, and in this case also, the lead frame 13 fixed to the heat sink 11 and the lead frame 13 on the insulator 12 are on the same surface. Becomes By using the adhesive 18, a semiconductor device having a more stable structure can be formed. In any case, the semiconductor elements can be insulated from each other only by adding the step of coating the heat sink 11 with the insulator 12.
【００１２】[0012]
【発明の効果】本発明によれば、複数の通電電流の大き
い半導体素子と、ヒートシンクを有する樹脂封止型半導
体装置において、ヒートシンクとリードフレームの接触
による絶縁不良の問題を、従来の形成工程にヒートシン
ク上に絶縁物をコーティングする工程を加えるだけで防
ぐことができる。それゆえ、リードフレームを強固にす
る必要はなく、高密度実装に適した微細加工が可能とな
る。According to the present invention, in a resin-sealed semiconductor device having a plurality of semiconductor elements having a large energizing current and a heat sink, the problem of insulation failure due to contact between the heat sink and the lead frame is eliminated by the conventional forming process. This can be prevented simply by adding the step of coating the insulator on the heat sink. Therefore, it is not necessary to strengthen the lead frame, and fine processing suitable for high-density mounting is possible.
【００１３】また、従来の構造においては、ヒートシン
クとリードフレームの間に、セラミック等の絶縁物に比
べ熱伝導率の悪いモールド樹脂が存在していたため放熱
効率（熱抵抗）が悪く、十分な性能が得られなかった
が、本発明によれば、セラミックなどの絶縁物を介して
ヒートシンクとリードフレームとを接触させるため高い
放熱効率を得ることができる。従って、高性能かつ低コ
ストな樹脂封止型半導体装置をえることができる。Further, in the conventional structure, since the mold resin having a poorer thermal conductivity than the insulating material such as ceramics is present between the heat sink and the lead frame, the heat radiation efficiency (thermal resistance) is poor and the performance is sufficient. However, according to the present invention, since the heat sink and the lead frame are brought into contact with each other through an insulator such as ceramic, high heat dissipation efficiency can be obtained. Therefore, a high-performance and low-cost resin-sealed semiconductor device can be obtained.
【図１】本発明による第１実施例の半導体装置におい
て、樹脂を透視した平面図（ａ）、ＸＸ断面を表す断面
図（ｂ）及びＹＹ断面を表す断面図（ｃ）である。FIG. 1 is a plan view (a) in which a resin is seen through, a sectional view showing an XX section (b) and a sectional view showing an YY section (c) in a semiconductor device of a first example according to the present invention.
【図２】本発明による第２実施例の半導体装置におい
て、樹脂を透視した平面図（ａ）、ＸＸ断面を表す断面
図（ｂ）及びＹＹ断面を表す断面図（ｃ）である。FIG. 2 is a plan view (a) in which a resin is seen through, a sectional view (b) showing a XX section, and a sectional view (c) showing an YY section in a semiconductor device of a second example according to the present invention.
【図３】従来の半導体装置において、樹脂を透視した平
面図（ａ）及びＸＸ断面を表す断面図（ｂ）である。FIG. 3 is a plan view (a) through which a resin is seen and a cross-sectional view (b) showing an XX cross section in a conventional semiconductor device.
【図４】従来の他の半導体装置において、樹脂を透視し
た平面図（ａ）及びＸＸ断面を表す断面図（ｂ）であ
る。FIG. 4 is a plan view (a) through which a resin is seen and a cross-sectional view (b) showing an XX cross section in another conventional semiconductor device.
１１…ヒートシンク、１２…絶縁物、１３…リードフレ
ーム、１４…固定ピン、１５…半導体素子、１６…金属
細線、１７…モールド樹脂、１８…接着剤。11 ... Heat sink, 12 ... Insulator, 13 ... Lead frame, 14 ... Fixing pin, 15 ... Semiconductor element, 16 ... Metal fine wire, 17 ... Mold resin, 18 ... Adhesive.
Claims (2)
ためのアイランド領域を有するリードフレームと、放熱
機能を有する基板からなる樹脂封止型半導体装置におい
て、上記リードフレームが上記基板と絶縁物を介して接
することを特徴とする樹脂封止型半導体装置。1. A resin-sealed semiconductor device comprising a semiconductor element, a lead frame having an island region for bonding the semiconductor element, and a substrate having a heat dissipation function, wherein the lead frame is made of an insulating material from the substrate. A resin-encapsulated semiconductor device, characterized in that they are in contact with each other.
クからなることを特徴とする請求項１記載の樹脂封止型
半導体装置。2. The resin-encapsulated semiconductor device according to claim 1, wherein the insulator is made of ceramic having a good heat dissipation characteristic.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6345192A JPH05267500A (en) | 1992-03-19 | 1992-03-19 | Resin-sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6345192A JPH05267500A (en) | 1992-03-19 | 1992-03-19 | Resin-sealed semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05267500A true JPH05267500A (en) | 1993-10-15 |
Family
ID=13229619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6345192A Pending JPH05267500A (en) | 1992-03-19 | 1992-03-19 | Resin-sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05267500A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0831985A (en) * | 1994-07-05 | 1996-02-02 | Internatl Business Mach Corp <Ibm> | Semiconductor device and manufacture of semiconductor device |
| EP0650193A3 (en) * | 1993-10-25 | 1996-07-31 | Toshiba Kk | Semiconductor device and method for manufacturing the same. |
-
1992
- 1992-03-19 JP JP6345192A patent/JPH05267500A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0650193A3 (en) * | 1993-10-25 | 1996-07-31 | Toshiba Kk | Semiconductor device and method for manufacturing the same. |
| US5783466A (en) * | 1993-10-25 | 1998-07-21 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
| JPH0831985A (en) * | 1994-07-05 | 1996-02-02 | Internatl Business Mach Corp <Ibm> | Semiconductor device and manufacture of semiconductor device |
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