JPS61111585A - 光電池の製造法および光電池製造用インク - Google Patents

光電池の製造法および光電池製造用インク

Info

Publication number
JPS61111585A
JPS61111585A JP59232887A JP23288784A JPS61111585A JP S61111585 A JPS61111585 A JP S61111585A JP 59232887 A JP59232887 A JP 59232887A JP 23288784 A JP23288784 A JP 23288784A JP S61111585 A JPS61111585 A JP S61111585A
Authority
JP
Japan
Prior art keywords
mixture
cadmium
ink
photovoltaic cell
solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59232887A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0519836B2 (cg-RX-API-DMAC7.html
Inventor
Yasuto Isozaki
磯崎　康人
Hiroshi Hasegawa
洋 長谷川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP59232887A priority Critical patent/JPS61111585A/ja
Publication of JPS61111585A publication Critical patent/JPS61111585A/ja
Publication of JPH0519836B2 publication Critical patent/JPH0519836B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/162—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Photovoltaic Devices (AREA)
JP59232887A 1984-11-05 1984-11-05 光電池の製造法および光電池製造用インク Granted JPS61111585A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59232887A JPS61111585A (ja) 1984-11-05 1984-11-05 光電池の製造法および光電池製造用インク

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59232887A JPS61111585A (ja) 1984-11-05 1984-11-05 光電池の製造法および光電池製造用インク

Publications (2)

Publication Number Publication Date
JPS61111585A true JPS61111585A (ja) 1986-05-29
JPH0519836B2 JPH0519836B2 (cg-RX-API-DMAC7.html) 1993-03-17

Family

ID=16946394

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59232887A Granted JPS61111585A (ja) 1984-11-05 1984-11-05 光電池の製造法および光電池製造用インク

Country Status (1)

Country Link
JP (1) JPS61111585A (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4369423A4 (en) * 2021-11-23 2025-04-02 China Triumph International Engineering Co., Ltd. METHOD FOR ACTIVATING ABSORPTION LAYER OF THIN-FILM SOLAR CELL

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4369423A4 (en) * 2021-11-23 2025-04-02 China Triumph International Engineering Co., Ltd. METHOD FOR ACTIVATING ABSORPTION LAYER OF THIN-FILM SOLAR CELL

Also Published As

Publication number Publication date
JPH0519836B2 (cg-RX-API-DMAC7.html) 1993-03-17

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