JPS57200289A - Preparation of crystal thin film - Google Patents
Preparation of crystal thin filmInfo
- Publication number
- JPS57200289A JPS57200289A JP8579981A JP8579981A JPS57200289A JP S57200289 A JPS57200289 A JP S57200289A JP 8579981 A JP8579981 A JP 8579981A JP 8579981 A JP8579981 A JP 8579981A JP S57200289 A JPS57200289 A JP S57200289A
- Authority
- JP
- Japan
- Prior art keywords
- film
- crystal
- pattern
- thin film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE: To form a crystal thin film and a single crystal thin film of good quality, by utilizing the edges of patterned intermediate films for the direction control of the crystal in forming the crystal thin film on an amorphous substrate.
CONSTITUTION: A resist 2 is applied to the surface of a quartz glass substrate 1, and a pattern is formed by the photolithography. Intermediate films of an Al film 3 and an Si film 4 are deposited on the pattern by the vacuum vapor deposition, and then dipped in a solvent for the resist 2 to form an Al.Si laminated film pattern. The pattern is then heat-treated in an inert gaseous atmosphere of an electric furnace to melt the Si from the Si film 4 into the Al film 3 and give an Si content of 30%. The excess Si is deposited on the substrate 1 as a crystal to prepare a stripe-shaped Si crystal film 5. The resultant Si crystal film 5 is formed in parallel as follows: (010) is parallel to the edge, and (100) is parallel to the substrate surface. Thus, the semiconductor crystal film of good quality can be grown even on an amorphous substrate.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8579981A JPS57200289A (en) | 1981-06-05 | 1981-06-05 | Preparation of crystal thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8579981A JPS57200289A (en) | 1981-06-05 | 1981-06-05 | Preparation of crystal thin film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57200289A true JPS57200289A (en) | 1982-12-08 |
Family
ID=13868922
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8579981A Pending JPS57200289A (en) | 1981-06-05 | 1981-06-05 | Preparation of crystal thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57200289A (en) |
-
1981
- 1981-06-05 JP JP8579981A patent/JPS57200289A/en active Pending
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