JPS57200289A - Preparation of crystal thin film - Google Patents

Preparation of crystal thin film

Info

Publication number
JPS57200289A
JPS57200289A JP8579981A JP8579981A JPS57200289A JP S57200289 A JPS57200289 A JP S57200289A JP 8579981 A JP8579981 A JP 8579981A JP 8579981 A JP8579981 A JP 8579981A JP S57200289 A JPS57200289 A JP S57200289A
Authority
JP
Japan
Prior art keywords
film
crystal
pattern
thin film
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8579981A
Other languages
Japanese (ja)
Inventor
Hidefumi Mori
Masahiro Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP8579981A priority Critical patent/JPS57200289A/en
Publication of JPS57200289A publication Critical patent/JPS57200289A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE: To form a crystal thin film and a single crystal thin film of good quality, by utilizing the edges of patterned intermediate films for the direction control of the crystal in forming the crystal thin film on an amorphous substrate.
CONSTITUTION: A resist 2 is applied to the surface of a quartz glass substrate 1, and a pattern is formed by the photolithography. Intermediate films of an Al film 3 and an Si film 4 are deposited on the pattern by the vacuum vapor deposition, and then dipped in a solvent for the resist 2 to form an Al.Si laminated film pattern. The pattern is then heat-treated in an inert gaseous atmosphere of an electric furnace to melt the Si from the Si film 4 into the Al film 3 and give an Si content of 30%. The excess Si is deposited on the substrate 1 as a crystal to prepare a stripe-shaped Si crystal film 5. The resultant Si crystal film 5 is formed in parallel as follows: (010) is parallel to the edge, and (100) is parallel to the substrate surface. Thus, the semiconductor crystal film of good quality can be grown even on an amorphous substrate.
COPYRIGHT: (C)1982,JPO&Japio
JP8579981A 1981-06-05 1981-06-05 Preparation of crystal thin film Pending JPS57200289A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8579981A JPS57200289A (en) 1981-06-05 1981-06-05 Preparation of crystal thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8579981A JPS57200289A (en) 1981-06-05 1981-06-05 Preparation of crystal thin film

Publications (1)

Publication Number Publication Date
JPS57200289A true JPS57200289A (en) 1982-12-08

Family

ID=13868922

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8579981A Pending JPS57200289A (en) 1981-06-05 1981-06-05 Preparation of crystal thin film

Country Status (1)

Country Link
JP (1) JPS57200289A (en)

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