JPS61111542A - Wafer drying method - Google Patents
Wafer drying methodInfo
- Publication number
- JPS61111542A JPS61111542A JP23362184A JP23362184A JPS61111542A JP S61111542 A JPS61111542 A JP S61111542A JP 23362184 A JP23362184 A JP 23362184A JP 23362184 A JP23362184 A JP 23362184A JP S61111542 A JPS61111542 A JP S61111542A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- nozzle
- gas
- roller
- lower nozzle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001035 drying Methods 0.000 title claims description 13
- 238000000034 method Methods 0.000 claims abstract description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 23
- 235000012431 wafers Nutrition 0.000 abstract description 43
- 239000007789 gas Substances 0.000 abstract description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 8
- 229910001873 dinitrogen Inorganic materials 0.000 abstract description 8
- 238000005339 levitation Methods 0.000 abstract 3
- 230000010355 oscillation Effects 0.000 abstract 1
- 241000257465 Echinoidea Species 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Solid Materials (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はシリコンウェハー等の清浄化処理後の乾燥方法
に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for drying silicon wafers and the like after cleaning.
従来例の構成とその問題点
従来のエアーカット式のウェハーの乾燥方法について第
１図、第２図に基づき説明する。第１図において、ウェ
ハー１は表面の水膜１ａ、裏面の水膜１ｂに覆われた状
態で、外周部が海綿状の吸水ローラー２の入方向の回転
により、Ｂ方向に搬送される。ウェハー１は搬送中にお
いて、上方に設けられたノズル３の空洞部３ａへ供給さ
れた圧縮チッソガスをノズルスリット３ｂから吹き出し
て、ウェハー１の表面の水膜１ａｉ水切りし、乾燥を行
なう。また、ウェハー１の裏面の水膜１ｂは多数個設け
られた吸水ローラー２の吸水効果により水切り乾燥を行
なう。吸水ローラー２の下方には、吸水ローラー２の表
面全圧縮して水を絞り取る絞りローラー４が設けられて
おり、Ｃ方向に回転する。The structure of the conventional example and its problems The conventional air-cut type wafer drying method will be explained based on FIGS. 1 and 2. In FIG. 1, a wafer 1 is conveyed in a direction B by the rotation of a water absorbing roller 2 having a spongy outer circumferential portion in a direction B while being covered with a water film 1a on the front surface and a water film 1b on the back surface. While the wafer 1 is being transported, the compressed nitrogen gas supplied to the cavity 3a of the nozzle 3 provided above is blown out from the nozzle slit 3b to drain the water film 1ai on the surface of the wafer 1 and dry it. Further, the water film 1b on the back surface of the wafer 1 is drained and dried by the water absorption effect of the water absorption rollers 2 provided in large numbers. A squeezing roller 4 is provided below the water absorbing roller 2 and rotates in the C direction for compressing the entire surface of the water absorbing roller 2 to squeeze out water.
この方法では、ウェハー１の表面の水切りは良いが、裏
面については、吸水ローラー２では、吸水ローラー２が
常に水分を含んでいるために、吸水ローラー２の個数を
増しても完全な水切りは困難である。また、絞りローラ
ー４では吸水ローラー２に含んだ水を絞りきれず、吸水
ローラー２からウニノ・−１の裏面へ水の再付着が生じ
、ウニノ・−１の裏面に水滴が残ったり、シミの発生等
の問題があった。With this method, the front side of the wafer 1 can be drained well, but the water absorbing roller 2 always contains water, so it is difficult to completely drain the back side even if the number of water absorbing rollers 2 is increased. It is. In addition, the squeezing roller 4 cannot squeeze out the water contained in the water absorbing roller 2, and the water re-adheres from the water absorbing roller 2 to the back surface of UNINO-1, resulting in water droplets remaining on the back surface of UNINO-1 and stains. There were problems such as outbreaks.
また、第２図に示す方法では、ウニノ・−１は、水膜１
ａ 、１ｂに覆われた状態で、ローラー６によりＤ方向
に搬送される。ウニノ・−１は搬送中において、上方に
設けられた上ノズルらの空洞６ａに供給された圧縮チッ
ソガスをノズルスリット６ｂから吹き出してウェハー１
の表面の水膜１ａの水切り乾燥が行なわれる。また、下
方のローラー６と５ａとの間に設けら扛り下ノズル７に
エリ、ノズルスリット７ｂから圧縮チッソガスを吹き出
してウェハー１の裏面の水膜の水切り乾燥を行なうもの
である。In addition, in the method shown in FIG.
a and 1b, and is conveyed in the D direction by rollers 6. During conveyance, UNINO-1 blows out compressed nitrogen gas supplied to the cavity 6a of the upper nozzle from the nozzle slit 6b to remove the wafer 1.
The water film 1a on the surface is drained and dried. Further, compressed nitrogen gas is blown out from a nozzle slit 7b to a lower nozzle 7 provided between the lower rollers 6 and 5a to dry the water film on the back surface of the wafer 1.
この方法では、ウェハー１が上ノズル６と下ノズル７と
の間を通過している状態においては、ウニ・・−１の表
裏とも水切り乾燥が良く行なわれるが、ウニ・・−１の
先端部分が上ノズル６に近づく時と、ウェハー１０後端
部が上ノズル６から遠ざかるときに、上ノズルら又は下
ノズル７から吹き出す圧縮チノノガスの圧力により、ウ
ニノ・−１は上下に振動して、ウニノ・−１の表面もし
くは裏面の水切りが不完全になり、シミ等の問題が発生
していた。In this method, while the wafer 1 is passing between the upper nozzle 6 and the lower nozzle 7, the front and back sides of the sea urchin 1 are well drained and dried, but the tip of the urchin 1 When the wafer 10 approaches the upper nozzle 6 and when the rear end of the wafer 10 moves away from the upper nozzle 6, the pressure of the compressed chino gas blown out from the upper nozzles or the lower nozzle 7 causes the Unino-1 to vibrate up and down, causing the Unino-1 to vibrate up and down.・Drainage on the front or back side of -1 was incomplete, causing problems such as stains.
発明の目的
本発明は上記欠点をとりのぞき、ウニ・・−の表面と同
様裏面を安定して完全に水切り乾燥できる方法を提供す
るものである。OBJECTS OF THE INVENTION The present invention eliminates the above-mentioned drawbacks and provides a method that can stably and completely dry the back side of sea urchins as well as the front side.
発明の構成
本発明は、上方の第１のノズルを第１のローラー近房に
配置し、上方の第２のノズル金策２のローラー近房に配
置し、上方の第１と第２のノズルの中間近房に下方のノ
ズルを配置し、上方の第１または第２のノズルから噴出
する気体の垂直分力よりも下方のノズルから噴出する気
体の垂直分力を小さくして水切りをすることから、ウニ
ノ・−が搬送中に、上方の２つのノズルから噴出する気
体の圧力と２つのローラーとの支持により、ウニ・・−
の先端及び後端が下ノズル部全通過するとき、上ノズル
とローラーとでウェハー全保持するために、上下の振動
を生じさせず、ウェハー裏面の水切り乾燥を確実に行な
える効果？有する。Structure of the Invention In the present invention, an upper first nozzle is arranged near the first roller, a second upper nozzle is arranged near the roller of the metal measure 2, and the upper first and second nozzles are connected to each other. The lower nozzle is placed in the middle near chamber, and the vertical force of the gas ejected from the lower nozzle is made smaller than the vertical force of the gas ejected from the upper first or second nozzle, thereby draining water. While the sea urchins are being transported, the pressure of the gas ejected from the two upper nozzles and the support of the two rollers causes the sea urchins to be transported.
When the front and back ends of the wafer pass through the lower nozzle, the upper nozzle and rollers hold the wafer in its entirety, so there is no vertical vibration and the back side of the wafer can be drained and dried reliably. have
実施例の説明
以下本発明の一実施例について、図面にもとすき説明す
る。DESCRIPTION OF EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.
第３図は本発明のウェハー乾燥方法を具体化した一実施
例であるウェハー乾燥装置の断面構造を示すものである
。第３図において、１はウニノ・−１ｌａはウェハー１
の表面に形成された水膜、１ｂはウェハー１の裏面に形
成された水膜、８．９はウェハー１全Ｅ方向に搬送する
ローラー、１０は上方の第１のノズルで、１０ａは圧縮
チソンガス全供給する空洞、１０ｂはローラー８の近房
にあってローラー８の長手方向にスリット状に設けられ
た第１の上ノズルスリット、同様に１１は上方の第２の
ノズル、１１ａは空洞、１１ｂはローラー９の近房にあ
ってローラー９の長手方向にスリット状に設けられた第
２の上ノズルスリット、１２は下方のノズル、１２ａは
空洞、１２ｂはローラー８とローラー９の中間近房にあ
ってローラー８゜９の長手方向にスリット状に設けられ
た下ノズルスリットである。FIG. 3 shows a cross-sectional structure of a wafer drying apparatus which is an embodiment of the wafer drying method of the present invention. In Figure 3, 1 is Unino, -1la is wafer 1
1b is a water film formed on the back surface of the wafer 1, 8.9 is a roller that transports the wafer 1 in the E direction, 10 is a first nozzle located above, and 10a is a compressed gas 10b is a first upper nozzle slit located in the vicinity of the roller 8 and provided in a slit shape in the longitudinal direction of the roller 8; similarly, 11 is an upper second nozzle; 11a is a cavity; 11b 12 is a lower nozzle, 12a is a cavity, and 12b is located in a near chamber between rollers 8 and 9. This is a lower nozzle slit provided in a slit shape in the longitudinal direction of the roller 8°9.
以上のように構成されたウニ・・−乾燥装置について、
以下その動作を説明する。Regarding the sea urchin drying device configured as above,
The operation will be explained below.
ウェハー１はローラー８，９等の回転により、Ｅ方向へ
搬送される。ウェハー１がローラー８゜９の部分を通過
する間、上ノズルスリット１０ｂ。The wafer 1 is conveyed in the E direction by rotation of rollers 8, 9, etc. While the wafer 1 passes through the roller 8°9 section, the upper nozzle slit 10b.
１１ｂから圧縮チッソガスをウェハー１の表面に対して
７０°〜８０°の角度傾斜させて吹き出す。′また、下
ノズルスリット１２ｂからは、圧縮チソノガスをウェハ
ー１の裏面に対し４６〜６０’の角度傾斜させて吹き出
す。このとき、上ノズルスリット１ｏｂまたは１１ｂか
ら吹き出す圧縮チソンガスのウェハー１に対する垂直分
力は下ノズルスリッ）１２ｂから吹き出す圧縮チッソガ
スのウニ・・−１に対する垂直分力よりも大きく設定さ
れており、ウェハー１は浮き上がが防止される。Compressed nitrogen gas is blown out from 11b at an angle of 70° to 80° with respect to the surface of the wafer 1. 'Furthermore, from the lower nozzle slit 12b, the compressed chisono gas is blown out at an angle of 46 to 60' with respect to the back surface of the wafer 1. At this time, the vertical component of the compressed nitrogen gas blown out from the upper nozzle slit 1ob or 11b on the wafer 1 is set larger than the vertical component force on the sea urchin...-1 of the compressed nitrogen gas blown out from the lower nozzle slit 12b, and the wafer 1 This prevents floating.
以上より、ウェハー１の先端部及び仮端部が下ノズルス
リッ）１２ｂｉ通過するときウェハー１の浮き上り等に
よるウェハー１の振動が発生せず安定した水切り乾燥が
行なえる。As described above, when the tip and temporary ends of the wafer 1 pass through the lower nozzle slit 12bi, no vibration of the wafer 1 due to lifting of the wafer 1 occurs, and stable draining and drying can be performed.
発明の効果
以上のように本発明によれば、上方の第１のノズルを第
１のローラー返戻に配置し、上方の第２のノズルを第２
のローラー返戻に配置し、上方の第１と第２のノズルの
中間返戻に下方のノズル金配肯し、上方の第１４たけ第
２のノズルから噴出する気体の垂直分力よりも下方のノ
ズルから噴出する気体の垂直分力を小さくして水切り乾
燥をするので、ウェハーの浮き上りを防止でき、安定し
たウェハーの水切り乾燥ができる効果を有する。Effects of the Invention As described above, according to the present invention, the upper first nozzle is arranged on the first roller return, and the upper second nozzle is arranged on the second roller return.
The roller is placed in the return position, and the lower nozzle is arranged in the intermediate return position between the upper first and second nozzles, and the nozzle is located below the vertical component of the gas ejected from the upper 14th nozzle. Draining and drying is carried out by reducing the vertical force of the gas ejected from the wafer, which prevents the wafer from floating and allows for stable wafer draining and drying.
第１図は従来のウェハー乾燥方法全示す装置の断面図、
第２図は従来の別のウェハー乾燥方法を示す装置の断面
図、第３図は本発明のつ二／・−の乾燥方法を具体化し
た装置の断面図である。
１・・・・・・ウェハー％ Ｅ３ 、９・・・・・・ロ
ーラー、１０゜１１・・・・・・上ノズル、１２・・・
・・下ノズル。
城 社
’）１１−Figure 1 is a cross-sectional view of an apparatus showing the entire conventional wafer drying method;
FIG. 2 is a sectional view of an apparatus showing another conventional wafer drying method, and FIG. 3 is a sectional view of an apparatus embodying the two drying methods of the present invention. 1...Wafer% E3, 9...Roller, 10°11...Top nozzle, 12...
...Lower nozzle. Castle Company') 11-
Claims (1)
搬送し、前記ローラーの上方、及び下方に設けた傾斜し
た複数個のノズルより噴出する気体の圧力によりウェハ
ーの水切り乾燥する方法であって、上方の第１のノズル
を第１のローラー近房に配置し、上方の第２のノズルを
第２のローラー近房に配置し、上方の第１と第２のノズ
ルの中間近房に下方のノズルを配置し、上方の第１また
は第２のノズルから噴出する気体の垂直分力よりも下方
のノズルから噴出する気体の垂直分力を小さくして水切
りを行なうことを特徴とするウェハーの乾燥方法。A method in which a wafer is transported by a plurality of rollers with the circuit forming side facing upward, and the wafer is drained and dried by the pressure of gas ejected from a plurality of inclined nozzles provided above and below the rollers, the method comprising: The upper first nozzle is placed in the proximal chamber of the first roller, the upper second nozzle is placed in the proximal chamber of the second roller, and the lower nozzle is placed in the proximal chamber intermediate between the upper first and second nozzles. Wafer drying characterized by arranging nozzles and performing water removal by making the vertical component of the gas ejected from the lower nozzle smaller than the vertical component of the gas ejected from the upper first or second nozzle. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23362184A JPS61111542A (en) | 1984-11-06 | 1984-11-06 | Wafer drying method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23362184A JPS61111542A (en) | 1984-11-06 | 1984-11-06 | Wafer drying method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61111542A true JPS61111542A (en) | 1986-05-29 |
Family
ID=16957914
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23362184A Pending JPS61111542A (en) | 1984-11-06 | 1984-11-06 | Wafer drying method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61111542A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6315421A (en) * | 1986-07-08 | 1988-01-22 | Mitsubishi Metal Corp | Removal of extraneous adhering liquid |
| WO2019011382A1 (en) * | 2017-07-14 | 2019-01-17 | RENA Technologies GmbH | Drying device and method for drying a substrate |
| JPWO2021149532A1 (en) * | 2020-01-22 | 2021-07-29 |
-
1984
- 1984-11-06 JP JP23362184A patent/JPS61111542A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6315421A (en) * | 1986-07-08 | 1988-01-22 | Mitsubishi Metal Corp | Removal of extraneous adhering liquid |
| WO2019011382A1 (en) * | 2017-07-14 | 2019-01-17 | RENA Technologies GmbH | Drying device and method for drying a substrate |
| JP2020527689A (en) * | 2017-07-14 | 2020-09-10 | レナ テクノロジー ゲーエムベーハーＲＥＮＡ Ｔｅｃｈｎｏｌｏｇｉｅｓ ＧｍｂＨ | Drying device and method for drying the substrate |
| JPWO2021149532A1 (en) * | 2020-01-22 | 2021-07-29 | ||
| WO2021149532A1 (en) * | 2020-01-22 | 2021-07-29 | 東京エレクトロン株式会社 | Substrate processing device and substrate processing method |
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