JPS62150828A - Wafer drying apparatus - Google Patents

Wafer drying apparatus

Info

Publication number
JPS62150828A
JPS62150828A JP29080585A JP29080585A JPS62150828A JP S62150828 A JPS62150828 A JP S62150828A JP 29080585 A JP29080585 A JP 29080585A JP 29080585 A JP29080585 A JP 29080585A JP S62150828 A JPS62150828 A JP S62150828A
Authority
JP
Japan
Prior art keywords
wafer
dry
drying apparatus
same surface
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP29080585A
Other languages
Japanese (ja)
Inventor
Noriaki Ishio
石尾 則明
Shigeo Nagao
長尾 繁雄
Kuniaki Miyake
邦明 三宅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP29080585A priority Critical patent/JPS62150828A/en
Publication of JPS62150828A publication Critical patent/JPS62150828A/en
Pending legal-status Critical Current

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  • Drying Of Solid Materials (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To immediately dry a wafer after cleaning it for a short time by providing a nozzle of dry gas and a vacuum outlet on the same surface. CONSTITUTION:A vacuum outlet 4 and a gas injection nozzle port 3 are formed on the same surface. Dry gas 5 is injected to a wafer 1 which is cleaned with pure water from an injection nozzle port 3 to splash water droplets 2 and the splashed droplets 2 are sucked from the outlet 4 to dry the wafer 1. Since both the nozzle port and the outlet are formed on the same surface, the wafer can be dried in a short time. The wafer can be utilized immediately after cleaned to prevent dust from being readhered thereto.

Description

【発明の詳細な説明】 [産業上の利用分野コ   ゛ この発明は半導体装置の製造に使用するウェハ乾燥装置
に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a wafer drying apparatus used for manufacturing semiconductor devices.

[従来の技術] 第2図は従来のウェハ乾燥装置を示す断面図であり、図
において、(1)は半導体ウェハ、(2)はこのウェハ
(1)上に付着している水滴、(3)はノズル口、(5
)はドライガスである。
[Prior Art] FIG. 2 is a sectional view showing a conventional wafer drying apparatus. In the figure, (1) is a semiconductor wafer, (2) is a water droplet attached to this wafer (1), and (3) is a sectional view showing a conventional wafer drying apparatus. ) is the nozzle opening, (5
) is dry gas.

次にその動作について説明する。まず、半導体装置製造
プロセスにおいて、各プロセスの前処理としてウェハの
純水洗浄がある。この洗浄したウェハ(1)上の水滴(
2)を乾燥する方法としては、ドライガス(5)をノズ
ル口(3)より噴きつけて乾燥する、またはバッチごと
にリンサードライヤーなどでウェハを高速回転して乾燥
する。
Next, its operation will be explained. First, in a semiconductor device manufacturing process, a wafer is cleaned with pure water as a pretreatment for each process. Water droplets (
Methods for drying 2) include drying by spraying dry gas (5) from the nozzle port (3), or drying the wafers by rotating them at high speed using a rinser dryer or the like for each batch.

[発明が解決しようとする問題点] 従来の乾燥装置は以上のように構成されているので乾燥
に長時間必要とし、かつゴミがつきやすいなどの問題点
があった。また、リンサードライヤーは装置が大きく、
かつバッチ処理であるため1枚ごとの半導体ウェハの乾
燥には不向きであり、時間が長くかかる欠点があった。
[Problems to be Solved by the Invention] Since the conventional drying apparatus is configured as described above, it has problems such as requiring a long time for drying and being susceptible to dust. In addition, the rinser dryer is a large device,
Moreover, since it is a batch process, it is not suitable for drying semiconductor wafers one by one, and has the disadvantage that it takes a long time.

この発明は上記のような問題点を解消するためになされ
たもので、乾燥時のゴミを少なくできるとともに、半導
体ウェハの洗浄後即時に、かつ短時間で乾燥できるウェ
ハ乾燥装置を得ることを目的とする。
This invention was made to solve the above-mentioned problems, and aims to provide a wafer drying device that can reduce dust during drying and dry semiconductor wafers immediately after cleaning and in a short time. shall be.

[問題点を解決するための手段] この発明に係るウェハ乾燥装置は、高圧のドライガスを
噴きつけるノズル口を複数個設けるとともに、その同一
面に複数個の真空排気口を備えたものである。
[Means for Solving the Problems] A wafer drying apparatus according to the present invention is provided with a plurality of nozzle ports for spraying high-pressure dry gas, and a plurality of vacuum exhaust ports on the same surface. .

「作用] この発明におけるウェハ乾燥装置は、ノズルより噴出し
たドライガスにより、水滴を飛散させると同時に、飛散
した水滴を真空排気口より吸気してウェハを乾燥する。
[Function] The wafer drying apparatus according to the present invention scatters water droplets using the dry gas ejected from the nozzle, and at the same time sucks the scattered water droplets from the vacuum exhaust port to dry the wafer.

[発明の実施例] 以下、この発明の一実施例によるウェハ乾燥装置を第1
図(a)の断面図について説明する。第1図(a)にお
いて、(4)は真空排気口、(6)は排気を示し、真空
排気口(4)およびガス噴出ノズル口(3)はいずれも
同一面に形成されている。また、第1図(b)は乾燥装
置の平面図であり、ガス噴出ノズル口(3)と真空排気
口(4)の配置を示す。なお、第2図と同じ符号はこれ
と同一または類似の機能を示す。
[Embodiment of the Invention] Hereinafter, a wafer drying apparatus according to an embodiment of the present invention will be described as a first embodiment.
The cross-sectional view of Figure (a) will be explained. In FIG. 1(a), (4) indicates a vacuum exhaust port, and (6) indicates an exhaust port, and both the vacuum exhaust port (4) and the gas jet nozzle port (3) are formed on the same surface. Moreover, FIG. 1(b) is a plan view of the drying apparatus, showing the arrangement of the gas ejection nozzle port (3) and the vacuum exhaust port (4). Note that the same reference numerals as in FIG. 2 indicate the same or similar functions.

次にその動作を説明する。まず、純水洗浄された半導体
ウェハ(1)を取り出した後、2〜lokg/cs″の
ガス圧のドライガスCwt:M素)を噴出ノズル口(3
)より前記ウェハ(1)に噴きつけ、同時に1〜30Q
/seaの速度で真空排気口(4)から吸気を行い、こ
れにより5インチウェハを3〜8secで乾燥すること
ができた。なお、ウェハ乾燥装置の全乾燥面の面積は約
140cm”で全噴出ノズル面積は4〜10cm’のも
のを用いた。
Next, its operation will be explained. First, after taking out the semiconductor wafer (1) that has been cleaned with pure water, a dry gas (Cwt: M element) with a gas pressure of 2 to 10 kg/cs is injected into the nozzle opening (3
) onto the wafer (1), and at the same time 1 to 30Q.
Air was taken in from the vacuum exhaust port (4) at a speed of /sea, and thereby a 5-inch wafer could be dried in 3 to 8 seconds. The wafer drying apparatus used had a total drying surface area of about 140 cm'' and a total ejection nozzle area of 4 to 10 cm''.

なお、上記実施例では全排気口(4)の中にガス噴出ノ
ズル口(3)が点在するように配列したが、これは噴出
ノズル口(3)と真空排気口(4)とを交互にリング状
に配列してもよい。また、上記実施例では半導体ウェハ
(1)の乾燥に利用したが、これはマスクの乾燥にも利
用できる。また除塵装置としても利用できる。
In the above embodiment, the gas ejection nozzle ports (3) are arranged so as to be scattered among all the exhaust ports (4), but in this case, the ejection nozzle ports (3) and the vacuum exhaust ports (4) are arranged alternately. They may be arranged in a ring. Further, in the above embodiment, the method was used to dry the semiconductor wafer (1), but it can also be used to dry the mask. It can also be used as a dust removal device.

[発明の効果] 以“上のようにこの発明によれば、ドライガスにより水
滴を噴き飛ばすノズル口と、飛び散った水滴を吸引する
排気口の両方を同一面に形成したので、ウェハの乾燥が
短時間で行うことができ、かつ装置が安価にできる効果
がある。また、ウェハの洗浄後ただちに利用でき、そし
てゴミの再付着を防止できる効果がある。
[Effects of the Invention] As described above, according to the present invention, since both the nozzle port that blows out water droplets using dry gas and the exhaust port that sucks the scattered water droplets are formed on the same surface, drying of the wafer is prevented. This method can be carried out in a short period of time, and the equipment can be made at low cost.It can also be used immediately after cleaning the wafer, and it can prevent dust from re-adhering.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(a)はこの発明の一実施例によるウェハ乾燥装
置を示す断面図であり、第1図(b)はその平面図、第
2図は従来のウェハ乾燥装置を示す断面図である。 図中、(1)は半導体ウェハ、(2)は水滴、(3)は
ガス噴出ノズル口、(4)は真空排気口、(5)はドラ
イガス、(6)は排気である。 なお、各図中同一符号は同一または相当部分を示す。
FIG. 1(a) is a sectional view showing a wafer drying apparatus according to an embodiment of the present invention, FIG. 1(b) is a plan view thereof, and FIG. 2 is a sectional view showing a conventional wafer drying apparatus. . In the figure, (1) is a semiconductor wafer, (2) is a water droplet, (3) is a gas ejection nozzle port, (4) is a vacuum exhaust port, (5) is a dry gas, and (6) is an exhaust gas. Note that the same reference numerals in each figure indicate the same or corresponding parts.

Claims (1)

【特許請求の範囲】[Claims] (1)ドライガスを噴き出す複数個の噴出口とウェハの
水分等を吸気する真空排気口の両方を同一面に備えたこ
とを特徴とするウェハ乾燥装置。
(1) A wafer drying apparatus characterized by having both a plurality of jetting ports for spouting dry gas and a vacuum exhaust port for sucking moisture, etc. from the wafers on the same surface.
JP29080585A 1985-12-25 1985-12-25 Wafer drying apparatus Pending JPS62150828A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29080585A JPS62150828A (en) 1985-12-25 1985-12-25 Wafer drying apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29080585A JPS62150828A (en) 1985-12-25 1985-12-25 Wafer drying apparatus

Publications (1)

Publication Number Publication Date
JPS62150828A true JPS62150828A (en) 1987-07-04

Family

ID=17760715

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29080585A Pending JPS62150828A (en) 1985-12-25 1985-12-25 Wafer drying apparatus

Country Status (1)

Country Link
JP (1) JPS62150828A (en)

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7153400B2 (en) 2002-09-30 2006-12-26 Lam Research Corporation Apparatus and method for depositing and planarizing thin films of semiconductor wafers
US7198055B2 (en) 2002-09-30 2007-04-03 Lam Research Corporation Meniscus, vacuum, IPA vapor, drying manifold
US7234477B2 (en) * 2000-06-30 2007-06-26 Lam Research Corporation Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces
US7282098B2 (en) * 2002-03-15 2007-10-16 Seiko Epson Corporation Processing-subject cleaning method and apparatus, and device manufacturing method and device
US7293571B2 (en) 2002-09-30 2007-11-13 Lam Research Corporation Substrate proximity processing housing and insert for generating a fluid meniscus
US7367345B1 (en) 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
US7383843B2 (en) 2002-09-30 2008-06-10 Lam Research Corporation Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
US7389783B2 (en) 2002-09-30 2008-06-24 Lam Research Corporation Proximity meniscus manifold
US7513262B2 (en) 2002-09-30 2009-04-07 Lam Research Corporation Substrate meniscus interface and methods for operation
US7614411B2 (en) 2002-09-30 2009-11-10 Lam Research Corporation Controls of ambient environment during wafer drying using proximity head
US7632376B1 (en) 2002-09-30 2009-12-15 Lam Research Corporation Method and apparatus for atomic layer deposition (ALD) in a proximity system
US7675000B2 (en) 2003-06-24 2010-03-09 Lam Research Corporation System method and apparatus for dry-in, dry-out, low defect laser dicing using proximity technology
US7928366B2 (en) 2006-10-06 2011-04-19 Lam Research Corporation Methods of and apparatus for accessing a process chamber using a dual zone gas injector with improved optical access
US7975708B2 (en) 2007-03-30 2011-07-12 Lam Research Corporation Proximity head with angled vacuum conduit system, apparatus and method
US7982850B2 (en) 2002-11-12 2011-07-19 Asml Netherlands B.V. Immersion lithographic apparatus and device manufacturing method with gas supply
US7997288B2 (en) 2002-09-30 2011-08-16 Lam Research Corporation Single phase proximity head having a controlled meniscus for treating a substrate
US8062471B2 (en) 2004-03-31 2011-11-22 Lam Research Corporation Proximity head heating method and apparatus
US8141566B2 (en) 2007-06-19 2012-03-27 Lam Research Corporation System, method and apparatus for maintaining separation of liquids in a controlled meniscus
US8146902B2 (en) 2006-12-21 2012-04-03 Lam Research Corporation Hybrid composite wafer carrier for wet clean equipment
US8236382B2 (en) 2002-09-30 2012-08-07 Lam Research Corporation Proximity substrate preparation sequence, and method, apparatus, and system for implementing the same
US8464736B1 (en) 2007-03-30 2013-06-18 Lam Research Corporation Reclaim chemistry
US8580045B2 (en) 2009-05-29 2013-11-12 Lam Research Corporation Method and apparatus for physical confinement of a liquid meniscus over a semiconductor wafer
US9347987B2 (en) 2009-11-06 2016-05-24 Intel Corporation Direct liquid-contact micro-channel heat transfer devices, methods of temperature control for semiconductive devices, and processes of forming same
US9846372B2 (en) 2010-04-22 2017-12-19 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method

Cited By (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7234477B2 (en) * 2000-06-30 2007-06-26 Lam Research Corporation Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces
US7282098B2 (en) * 2002-03-15 2007-10-16 Seiko Epson Corporation Processing-subject cleaning method and apparatus, and device manufacturing method and device
US7695570B2 (en) 2002-03-15 2010-04-13 Seiko Epson Corporation Processing-subject cleaning method and apparatus, and device manufacturing method and device
US7367345B1 (en) 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
US7264007B2 (en) 2002-09-30 2007-09-04 Lam Research Corporation Method and apparatus for cleaning a substrate using megasonic power
US7293571B2 (en) 2002-09-30 2007-11-13 Lam Research Corporation Substrate proximity processing housing and insert for generating a fluid meniscus
US7153400B2 (en) 2002-09-30 2006-12-26 Lam Research Corporation Apparatus and method for depositing and planarizing thin films of semiconductor wafers
US7383843B2 (en) 2002-09-30 2008-06-10 Lam Research Corporation Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer
US7389783B2 (en) 2002-09-30 2008-06-24 Lam Research Corporation Proximity meniscus manifold
US7513262B2 (en) 2002-09-30 2009-04-07 Lam Research Corporation Substrate meniscus interface and methods for operation
US7614411B2 (en) 2002-09-30 2009-11-10 Lam Research Corporation Controls of ambient environment during wafer drying using proximity head
US7632376B1 (en) 2002-09-30 2009-12-15 Lam Research Corporation Method and apparatus for atomic layer deposition (ALD) in a proximity system
US8236382B2 (en) 2002-09-30 2012-08-07 Lam Research Corporation Proximity substrate preparation sequence, and method, apparatus, and system for implementing the same
US7198055B2 (en) 2002-09-30 2007-04-03 Lam Research Corporation Meniscus, vacuum, IPA vapor, drying manifold
US7997288B2 (en) 2002-09-30 2011-08-16 Lam Research Corporation Single phase proximity head having a controlled meniscus for treating a substrate
US7982850B2 (en) 2002-11-12 2011-07-19 Asml Netherlands B.V. Immersion lithographic apparatus and device manufacturing method with gas supply
US9091940B2 (en) 2002-11-12 2015-07-28 Asml Netherlands B.V. Lithographic apparatus and method involving a fluid inlet and a fluid outlet
US10620545B2 (en) 2002-11-12 2020-04-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10222706B2 (en) 2002-11-12 2019-03-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7675000B2 (en) 2003-06-24 2010-03-09 Lam Research Corporation System method and apparatus for dry-in, dry-out, low defect laser dicing using proximity technology
US8062471B2 (en) 2004-03-31 2011-11-22 Lam Research Corporation Proximity head heating method and apparatus
US7928366B2 (en) 2006-10-06 2011-04-19 Lam Research Corporation Methods of and apparatus for accessing a process chamber using a dual zone gas injector with improved optical access
US8146902B2 (en) 2006-12-21 2012-04-03 Lam Research Corporation Hybrid composite wafer carrier for wet clean equipment
US8464736B1 (en) 2007-03-30 2013-06-18 Lam Research Corporation Reclaim chemistry
US7975708B2 (en) 2007-03-30 2011-07-12 Lam Research Corporation Proximity head with angled vacuum conduit system, apparatus and method
US8141566B2 (en) 2007-06-19 2012-03-27 Lam Research Corporation System, method and apparatus for maintaining separation of liquids in a controlled meniscus
US8580045B2 (en) 2009-05-29 2013-11-12 Lam Research Corporation Method and apparatus for physical confinement of a liquid meniscus over a semiconductor wafer
US9347987B2 (en) 2009-11-06 2016-05-24 Intel Corporation Direct liquid-contact micro-channel heat transfer devices, methods of temperature control for semiconductive devices, and processes of forming same
US9448278B2 (en) 2009-11-06 2016-09-20 Intel Corporation Direct liquid-contact micro-channel heat transfer devices, methods of temperature control for semiconductive devices, and processes of forming same
US9846372B2 (en) 2010-04-22 2017-12-19 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method
US10209624B2 (en) 2010-04-22 2019-02-19 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method
US10620544B2 (en) 2010-04-22 2020-04-14 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method

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