JPS61110139A - Ｘ線リソグラフイ−法及びｘ線リソグラフイ−用マスク保持体 - Google Patents

Ｘ線リソグラフイ−法及びｘ線リソグラフイ−用マスク保持体

Info

Publication number
JPS61110139A
JPS61110139A JP59231279A JP23127984A JPS61110139A JP S61110139 A JPS61110139 A JP S61110139A JP 59231279 A JP59231279 A JP 59231279A JP 23127984 A JP23127984 A JP 23127984A JP S61110139 A JPS61110139 A JP S61110139A
Authority
JP
Japan
Prior art keywords
ray lithography
ray
aluminum nitride
mask
mask holder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59231279A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0481851B2 (enExample
Inventor
Hideo Kato
日出夫 加藤
Masaaki Matsushima
正明 松島
Keiko Matsuda
啓子 松田
Hirofumi Shibata
浩文 柴田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP59231279A priority Critical patent/JPS61110139A/ja
Priority to US06/794,180 priority patent/US4677042A/en
Priority to DE19853539201 priority patent/DE3539201A1/de
Publication of JPS61110139A publication Critical patent/JPS61110139A/ja
Publication of JPH0481851B2 publication Critical patent/JPH0481851B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP59231279A 1984-11-05 1984-11-05 Ｘ線リソグラフイ−法及びｘ線リソグラフイ−用マスク保持体 Granted JPS61110139A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP59231279A JPS61110139A (ja) 1984-11-05 1984-11-05 Ｘ線リソグラフイ−法及びｘ線リソグラフイ−用マスク保持体
US06/794,180 US4677042A (en) 1984-11-05 1985-11-01 Mask structure for lithography, method for preparation thereof and lithographic method
DE19853539201 DE3539201A1 (de) 1984-11-05 1985-11-05 Maskenstruktur fuer die lithografie, verfahren zu ihrer herstellung und lithografieverfahren

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59231279A JPS61110139A (ja) 1984-11-05 1984-11-05 Ｘ線リソグラフイ−法及びｘ線リソグラフイ−用マスク保持体

Publications (2)

Publication Number Publication Date
JPS61110139A true JPS61110139A (ja) 1986-05-28
JPH0481851B2 JPH0481851B2 (enExample) 1992-12-25

Family

ID=16921110

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59231279A Granted JPS61110139A (ja) 1984-11-05 1984-11-05 Ｘ線リソグラフイ−法及びｘ線リソグラフイ−用マスク保持体

Country Status (1)

Country Link
JP (1) JPS61110139A (enExample)

Also Published As

Publication number Publication date
JPH0481851B2 (enExample) 1992-12-25

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