JPS61108163A - 半導体記憶装置の製造方法 - Google Patents
半導体記憶装置の製造方法Info
- Publication number
- JPS61108163A JPS61108163A JP59230959A JP23095984A JPS61108163A JP S61108163 A JPS61108163 A JP S61108163A JP 59230959 A JP59230959 A JP 59230959A JP 23095984 A JP23095984 A JP 23095984A JP S61108163 A JPS61108163 A JP S61108163A
- Authority
- JP
- Japan
- Prior art keywords
- groove
- conductivity type
- insulating film
- window
- type semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000009792 diffusion process Methods 0.000 claims description 32
- 238000005530 etching Methods 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 22
- 239000003990 capacitor Substances 0.000 abstract description 18
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 8
- 239000011574 phosphorus Substances 0.000 abstract description 8
- 230000010354 integration Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 230000015654 memory Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 238000000926 separation method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59230959A JPS61108163A (ja) | 1984-11-01 | 1984-11-01 | 半導体記憶装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59230959A JPS61108163A (ja) | 1984-11-01 | 1984-11-01 | 半導体記憶装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61108163A true JPS61108163A (ja) | 1986-05-26 |
| JPH0369185B2 JPH0369185B2 (enrdf_load_stackoverflow) | 1991-10-31 |
Family
ID=16915999
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59230959A Granted JPS61108163A (ja) | 1984-11-01 | 1984-11-01 | 半導体記憶装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61108163A (enrdf_load_stackoverflow) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6356954A (ja) * | 1986-08-28 | 1988-03-11 | Nec Corp | 半導体記憶回路装置及び製造方法 |
| JPS6379370A (ja) * | 1986-09-22 | 1988-04-09 | Toshiba Corp | 半導体記憶装置およびその製造方法 |
| JPS63102250A (ja) * | 1986-10-20 | 1988-05-07 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
| JPS63122162A (ja) * | 1986-10-31 | 1988-05-26 | インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション | メモリ・アレイ |
| JPH01146353A (ja) * | 1987-12-02 | 1989-06-08 | Mitsubishi Electric Corp | 半導体記憶装置 |
| JPH02118387A (ja) * | 1988-10-28 | 1990-05-02 | Sanyo Electric Co Ltd | 冷却貯蔵庫 |
| JPH02276275A (ja) * | 1989-04-18 | 1990-11-13 | Oki Electric Ind Co Ltd | 半導体メモリ装置の製造方法 |
| US5843819A (en) * | 1989-05-22 | 1998-12-01 | Siemens Aktiengesellschaft | Semiconductor memory device with trench capacitor and method for the production thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60227461A (ja) * | 1984-04-19 | 1985-11-12 | Nippon Telegr & Teleph Corp <Ntt> | 半導体集積回路装置 |
| JPS6188554A (ja) * | 1984-10-08 | 1986-05-06 | Nippon Telegr & Teleph Corp <Ntt> | 半導体メモリおよびその製造方法 |
-
1984
- 1984-11-01 JP JP59230959A patent/JPS61108163A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60227461A (ja) * | 1984-04-19 | 1985-11-12 | Nippon Telegr & Teleph Corp <Ntt> | 半導体集積回路装置 |
| JPS6188554A (ja) * | 1984-10-08 | 1986-05-06 | Nippon Telegr & Teleph Corp <Ntt> | 半導体メモリおよびその製造方法 |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6356954A (ja) * | 1986-08-28 | 1988-03-11 | Nec Corp | 半導体記憶回路装置及び製造方法 |
| JPS6379370A (ja) * | 1986-09-22 | 1988-04-09 | Toshiba Corp | 半導体記憶装置およびその製造方法 |
| JPS63102250A (ja) * | 1986-10-20 | 1988-05-07 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
| JPS63122162A (ja) * | 1986-10-31 | 1988-05-26 | インタ−ナショナル・ビジネス・マシ−ンズ・コ−ポレ−ション | メモリ・アレイ |
| JPH01146353A (ja) * | 1987-12-02 | 1989-06-08 | Mitsubishi Electric Corp | 半導体記憶装置 |
| JPH02118387A (ja) * | 1988-10-28 | 1990-05-02 | Sanyo Electric Co Ltd | 冷却貯蔵庫 |
| JPH02276275A (ja) * | 1989-04-18 | 1990-11-13 | Oki Electric Ind Co Ltd | 半導体メモリ装置の製造方法 |
| US5843819A (en) * | 1989-05-22 | 1998-12-01 | Siemens Aktiengesellschaft | Semiconductor memory device with trench capacitor and method for the production thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0369185B2 (enrdf_load_stackoverflow) | 1991-10-31 |
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