JPS61100870U - - Google Patents
Info
- Publication number
- JPS61100870U JPS61100870U JP18712984U JP18712984U JPS61100870U JP S61100870 U JPS61100870 U JP S61100870U JP 18712984 U JP18712984 U JP 18712984U JP 18712984 U JP18712984 U JP 18712984U JP S61100870 U JPS61100870 U JP S61100870U
- Authority
- JP
- Japan
- Prior art keywords
- peripheral circuit
- semiconductor
- display section
- section
- display panel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011159 matrix material Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 229910052839 forsterite Inorganic materials 0.000 claims description 2
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 claims 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 2
- 239000010408 film Substances 0.000 claims 2
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- 239000010409 thin film Substances 0.000 claims 2
- 239000000463 material Substances 0.000 claims 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000006059 cover glass Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
Description
第１図は本考案の実施例を示す螢光表示パネル
の平面理図、第２図は同螢光表示パネルの側面略
図、第３図は第１図の表示部の断面略図、第４図
は本考案の実施例における螢光表示パネル用基板
を示す部分斜視図、第５図はマルチプレツクスマ
トリクス駆動方式を示す概念図、第６図はアクテ
イブマトリクス駆動方式を示す断念図、第７図は
アクテイブマトリクス駆動方式の従来例における
画素構成を示す略図、第８図は同従来例における
シリコンチツプ上の回路構成略図である。
なお、各図において、１……表示部、２……Ｍ
ＯＳ ＩＣチツプ、３……フオルステライト基板
、４……カバーガラス、５……低隔点ガラス、６
……外部端子、３１……スイツチング素子、３２
……キヤパシタ、３３……パツシベーシヨン層、
３４……配線層、３５……半導体層、３６……誘
電体層、３８……螢光体層、４１……ゲート電極
配線群、４２……ソース電極配線群、４３……ア
ルミニウム細線、４４……外部端子用電極配線、
５１……マルチプレツクス駆動方式における表示
部、５２……行駆動回路、５３……列駆動解路、
５４……制御回路、５５……外部回路、６１……
画素、６２……ＦＥＴ、６３……ゲート電極配線
、６４……ソース電極配線、７１……電荷蓄積用
トランジスタ、７２……発光制御用トランジスタ
、８１……画素アレイ、８２……Ｘレジスタ、８
３……Ｙレジスタ、８４……ドライバである。
Fig. 1 is a plan view of a fluorescent display panel showing an embodiment of the present invention, Fig. 2 is a schematic side view of the same fluorescent display panel, Fig. 3 is a schematic cross-sectional view of the display section of Fig. 1, and Fig. 4. 1 is a partial perspective view showing a substrate for a fluorescent display panel in an embodiment of the present invention, FIG. 5 is a conceptual diagram showing a multiplex matrix driving method, FIG. 6 is a cutaway diagram showing an active matrix driving method, and FIG. FIG. 8 is a schematic diagram showing a pixel configuration in a conventional example of an active matrix drive system. FIG. 8 is a schematic diagram of a circuit configuration on a silicon chip in the conventional example. In each figure, 1...display section, 2...M
OS IC chip, 3... Forsterite substrate, 4... Cover glass, 5... Low separation point glass, 6
...External terminal, 31...Switching element, 32
...capacity, 33...passivation layer,
34... Wiring layer, 35... Semiconductor layer, 36... Dielectric layer, 38... Fluorescent layer, 41... Gate electrode wiring group, 42... Source electrode wiring group, 43... Aluminum thin wire, 44 ...Electrode wiring for external terminals,
51...Display section in multiplex drive system, 52...Row drive circuit, 53...Column drive circuit,
54...Control circuit, 55...External circuit, 61...
Pixel, 62... FET, 63... Gate electrode wiring, 64... Source electrode wiring, 71... Charge storage transistor, 72... Light emission control transistor, 81... Pixel array, 82... X register, 8
3...Y register, 84...driver.
Claims (1)
示部と、該表示部を動作させる周辺回路部とが、
同一基板上に形成された構造を有する螢光表示パ
ネルにおいて、基板としてフオルステライトを用
いることと、前記表示部が多結晶シリコンを半導
体材料とするマトリクス状のＴＦＴ（Ｔｈｉｎ
Ｆｉｌｍ Ｔｒａｎｓｉｓｔｏｒ）により形成さ
れたスイツチング素子と該素子に接続された螢光
体層から成ることと、前記周辺回路部が単結晶シ
リコンから成るＭＯＳ（Ｍｅｔａｌ Ｏｘｉｄｅ
Ｓｅｍｉｃｏｎｄｕｃｔｏｒ）トランジスタか
ら形成されたＩＣチツプから成ること、および該
チツプが前記表示部と同じ真空容器内に設けられ
たことを特徴とする螢光表示パネル。 A display section having a phosphor layer arranged in a matrix, and a peripheral circuit section for operating the display section,
In a fluorescent display panel having a structure formed on the same substrate, forsterite is used as the substrate, and the display portion is formed of a matrix TFT (Thin Film) using polycrystalline silicon as a semiconductor material.
The peripheral circuit section is composed of a switching element formed by a film transistor (Film Transistor) and a phosphor layer connected to the element, and the peripheral circuit part is made of a MOS (Metal Oxide) made of single crystal silicon.
1. A fluorescent display panel comprising an IC chip formed from a Semiconductor (Semiconductor) transistor, and the chip is provided in the same vacuum container as the display section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18712984U JPS61100870U (en) | 1984-12-10 | 1984-12-10 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18712984U JPS61100870U (en) | 1984-12-10 | 1984-12-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61100870U true JPS61100870U (en) | 1986-06-27 |
Family
ID=30744594
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18712984U Pending JPS61100870U (en) | 1984-12-10 | 1984-12-10 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61100870U (en) |
-
1984
- 1984-12-10 JP JP18712984U patent/JPS61100870U/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0609919B1 (en) | Active matrix panel | |
| US5159477A (en) | Active matrix display device having additional capacitors connected to switching elements and additional capacitor common line | |
| EP0186036A3 (en) | Liquid crystal display device | |
| US4156833A (en) | Information display panel and method of fabrication | |
| JPS61100870U (en) | ||
| JPS61101952U (en) | ||
| JPS61101953U (en) | ||
| JPH0834760B2 (en) | Flat display device | |
| JPS61101793U (en) | ||
| JPS61235820A (en) | Active matrix panel | |
| JPH0239103B2 (en) | ||
| JPS6236687A (en) | Display unit | |
| JPS6145221A (en) | Device for image display and its manufacture | |
| JPS58117584A (en) | Display device array substrate | |
| JP4123537B2 (en) | Electronic equipment | |
| JPS60140088U (en) | Structure of display device | |
| JPH05289111A (en) | Active matrix liquid crystal display device | |
| JPS63177886U (en) | ||
| JPH0616945U (en) | Liquid crystal display | |
| JPS62151523U (en) | ||
| JPS6011878A (en) | Display | |
| JPS63108150U (en) | ||
| JPS634050U (en) | ||
| JPS5821117U (en) | liquid crystal display device | |
| JPS6314344U (en) |