JPS61101793U - - Google Patents
Info
- Publication number
- JPS61101793U JPS61101793U JP18570784U JP18570784U JPS61101793U JP S61101793 U JPS61101793 U JP S61101793U JP 18570784 U JP18570784 U JP 18570784U JP 18570784 U JP18570784 U JP 18570784U JP S61101793 U JPS61101793 U JP S61101793U
- Authority
- JP
- Japan
- Prior art keywords
- display section
- section
- fluorescent display
- display
- phosphor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011159 matrix material Substances 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 claims 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910052714 tellurium Inorganic materials 0.000 claims 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical group [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000006059 cover glass Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Description
第１図は本考案の実施例を示す蛍光表示パネル
の平面略図、第２図は同蛍光表示パネルの側面略
図、第３図は第１図の表示部の断面略図、第４図
は本考案の実施例における蛍光表示パネル用基板
を示す部分斜視図、第５図はマルチプレツクスマ
トリクス駆動方式を示す概念図、第６図はアクテ
イブマトリクス駆動方式を示す概念図、第７図は
アクテイブマトリクス駆動方式の従来例における
画素構成を示す略図、第８図は同従来例における
シリコンチツプ上の回路構成略図である。
なお、各図において、１……表示部、２……Ｍ
ＯＳ ＩＣチツプ、３……ソーダガラス基板、４
……カバーガラス、５……低融点ガラス、６……
外部端子、３１……スイツチング素子、３２……
キヤパシタ、３３……パツシベーシヨン層、３４
……配線層、３５……半導体層、３６……誘電体
層、３８……蛍光体層、４１……ゲート電極配線
群、４２……ソース電極配線群、４３……アルミ
ニウム細線、４４……外部端子用電極配線、５１
……マルチプレツクス駆動方式における表示部、
５２……行駆動回路、５３……列駆動回路、５４
……制御回路、５５……外部回路、６１……画素
、６２……ＦＥＴ、６３……ゲート電極配線、６
４……ソース電極配線、７１……電荷蓄積用トラ
ンジスタ、７２……発光制御用トランジスタ、８
１……画素アレイ、８２……Ｘレジスタ、８３…
…Ｙレジスタ、８４……ドライバである。
Fig. 1 is a schematic plan view of a fluorescent display panel showing an embodiment of the present invention, Fig. 2 is a schematic side view of the fluorescent display panel, Fig. 3 is a schematic cross-sectional view of the display section of Fig. 1, and Fig. 4 is a schematic plan view of the fluorescent display panel according to the present invention. FIG. 5 is a conceptual diagram showing a multiplex matrix driving method, FIG. 6 is a conceptual diagram showing an active matrix driving method, and FIG. 7 is an active matrix driving method. FIG. 8 is a schematic diagram showing a pixel configuration in a conventional example. FIG. 8 is a schematic diagram of a circuit configuration on a silicon chip in the conventional example. In each figure, 1...display section, 2...M
OS IC chip, 3...soda glass substrate, 4
...Cover glass, 5...Low melting point glass, 6...
External terminal, 31... Switching element, 32...
Capacitor, 33... Passivation layer, 34
... Wiring layer, 35 ... Semiconductor layer, 36 ... Dielectric layer, 38 ... Phosphor layer, 41 ... Gate electrode wiring group, 42 ... Source electrode wiring group, 43 ... Aluminum thin wire, 44 ... Electrode wiring for external terminals, 51
...Display section in multiplex drive system,
52...Row drive circuit, 53...Column drive circuit, 54
... Control circuit, 55 ... External circuit, 61 ... Pixel, 62 ... FET, 63 ... Gate electrode wiring, 6
4... Source electrode wiring, 71... Charge storage transistor, 72... Light emission control transistor, 8
1...Pixel array, 82...X register, 83...
...Y register, 84...driver.
Claims (1)
る表示部と、該表示部を動作させる周辺回路部と
が、同一基板上に形成された構造を有する蛍光表
示パネルにおいて、前記表示部がマトリクス状の
ＴＦＴ（Ｔｈｉｎ Ｆｉｌｍ Ｔｒａｎｓｉｓｔ
ｏｒ）により形成されたスイツチング素子と該素
子に接続された蛍光体層から成ることと、前記周
辺回路部が単結晶シリコンから成るＭＯＳ（Ｍｅ
―ｔａｌ Ｏｘｉｄｅ Ｓｅｍｉｃｏｎｄｕｃｔ
ｏｒ）トランジスタから形成されたＩＣチツプか
ら成ること、および該チツプが前記表示部と同じ
真空容器内に設けられたことを特徴とする蛍光表
示パネル。 (2) 前記ＴＦＴの半導体材料がテルル，セレン
化カドミウム、または硫化カドミウムから選ばれ
た材料からなる特徴とする実用新案登録請求の範
囲第(1)項記載の蛍光表示パネル。[Claims for Utility Model Registration] (1) A fluorescent display having a structure in which a display section having a phosphor layer arranged in a matrix and a peripheral circuit section for operating the display section are formed on the same substrate. In the panel, the display section is made of a matrix TFT (Thin Film Transistor).
or) and a phosphor layer connected to the switching element, and the peripheral circuit section is composed of a MOS (Me
-tal Oxide Semiconductor
or) A fluorescent display panel comprising an IC chip formed from a transistor, and the chip is provided in the same vacuum container as the display section. (2) The fluorescent display panel according to claim 1, wherein the semiconductor material of the TFT is selected from tellurium, cadmium selenide, or cadmium sulfide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18570784U JPS61101793U (en) | 1984-12-07 | 1984-12-07 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18570784U JPS61101793U (en) | 1984-12-07 | 1984-12-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61101793U true JPS61101793U (en) | 1986-06-28 |
Family
ID=30743173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18570784U Pending JPS61101793U (en) | 1984-12-07 | 1984-12-07 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61101793U (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5496357A (en) * | 1977-11-14 | 1979-07-30 | Wagner Electric Corp | Integration indicator and method of producing same |
| JPS5688243A (en) * | 1979-12-20 | 1981-07-17 | Ise Electronics Corp | Luminescent display tube |
| JPS59119658A (en) * | 1982-12-24 | 1984-07-10 | Nec Corp | Fluorescent character display tube |
-
1984
- 1984-12-07 JP JP18570784U patent/JPS61101793U/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5496357A (en) * | 1977-11-14 | 1979-07-30 | Wagner Electric Corp | Integration indicator and method of producing same |
| JPS5688243A (en) * | 1979-12-20 | 1981-07-17 | Ise Electronics Corp | Luminescent display tube |
| JPS59119658A (en) * | 1982-12-24 | 1984-07-10 | Nec Corp | Fluorescent character display tube |
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