JPS609668B2 - サイリスタ - Google Patents

サイリスタ

Info

Publication number
JPS609668B2
JPS609668B2 JP55158062A JP15806280A JPS609668B2 JP S609668 B2 JPS609668 B2 JP S609668B2 JP 55158062 A JP55158062 A JP 55158062A JP 15806280 A JP15806280 A JP 15806280A JP S609668 B2 JPS609668 B2 JP S609668B2
Authority
JP
Japan
Prior art keywords
emitter
thyristor
region
layer
anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55158062A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5683066A (en
Inventor
フ−ベルト・パタロング
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS5683066A publication Critical patent/JPS5683066A/ja
Publication of JPS609668B2 publication Critical patent/JPS609668B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/138—Thyristors having built-in components the built-in components being FETs

Landscapes

  • Thyristors (AREA)
JP55158062A 1979-11-09 1980-11-10 サイリスタ Expired JPS609668B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19792945366 DE2945366A1 (de) 1979-11-09 1979-11-09 Thyristor mit steuerbaren emitter-kurzschluessen
DE2945366,5 1979-11-09

Publications (2)

Publication Number Publication Date
JPS5683066A JPS5683066A (en) 1981-07-07
JPS609668B2 true JPS609668B2 (ja) 1985-03-12

Family

ID=6085623

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55158062A Expired JPS609668B2 (ja) 1979-11-09 1980-11-10 サイリスタ

Country Status (6)

Country Link
US (1) US4613766A (OSRAM)
EP (1) EP0030274B1 (OSRAM)
JP (1) JPS609668B2 (OSRAM)
BR (1) BR8007254A (OSRAM)
CA (1) CA1156770A (OSRAM)
DE (1) DE2945366A1 (OSRAM)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3018468A1 (de) * 1980-05-14 1981-11-19 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitterkurzschluessen und verfahren zu seinem betrieb
DE3112942A1 (de) * 1981-03-31 1982-10-07 Siemens AG, 1000 Berlin und 8000 München Thyristor und verfahren zu seinem betrieb
DE3118354A1 (de) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitterkurzschluessen und kurzschlussgebieten sowie verfahren zu seinem betrieb
DE3118365A1 (de) * 1981-05-08 1982-11-25 Siemens AG, 1000 Berlin und 8000 München Thyristor mit in den emitter eingefuegten steuerbaren emitter-kurzschlusspfaden
DE3138762A1 (de) * 1981-09-29 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitter-kurzschluessen und zuendverstaerkung
DE3138763A1 (de) * 1981-09-29 1983-06-30 Siemens AG, 1000 Berlin und 8000 München Lichtzuendbarer thyristor mit steuerbaren emitter-kurzschluessen und zuendverstaerkung
IE53895B1 (en) * 1981-11-23 1989-04-12 Gen Electric Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device
US5111268A (en) * 1981-12-16 1992-05-05 General Electric Company Semiconductor device with improved turn-off capability
IE56341B1 (en) * 1981-12-16 1991-07-03 Gen Electric Multicellular thyristor
US5014102A (en) * 1982-04-01 1991-05-07 General Electric Company MOSFET-gated bipolar transistors and thyristors with both turn-on and turn-off capability having single-polarity gate input signal
EP0106147A1 (en) * 1982-10-04 1984-04-25 General Electric Company Thyristor with turn-off capability
US4604638A (en) * 1983-05-17 1986-08-05 Kabushiki Kaisha Toshiba Five layer semiconductor device with separate insulated turn-on and turn-off gates
DE3330022A1 (de) * 1983-08-19 1985-02-28 Siemens AG, 1000 Berlin und 8000 München Thyristor
DE3447220A1 (de) * 1983-12-30 1985-07-11 General Electric Co., Schenectady, N.Y. Thyristor mit abschaltvermoegen mit verbessertem emitter-bereich und verfahren zu seiner herstellung
US4760432A (en) * 1985-11-04 1988-07-26 Siemens Aktiengesellschaft Thyristor having controllable emitter-base shorts
US4794432A (en) * 1987-01-27 1988-12-27 General Electric Company Mosfet structure with substrate coupled source

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL293292A (OSRAM) * 1962-06-11
FR1483998A (OSRAM) * 1965-05-14 1967-09-13
DE2040657C3 (de) * 1970-08-17 1975-10-02 Siemens Ag, 1000 Berlin Und 8000 Muenchen Elektronischer Schalter für Halbleiterkoppelpunkte in Fernmelde-, insbesondere Fernsprechvermittlungsanlagen
JPS5125116B1 (OSRAM) * 1970-10-08 1976-07-28
DE2158270C3 (de) * 1970-11-26 1978-08-03 Matsushita Electric Industrial Co., Ltd., Kadoma, Osaka (Japan) Kontaktloser Schalter mit einem Feldeffekt-Thyristor
JPS5135114B1 (OSRAM) * 1970-12-28 1976-09-30
US3858235A (en) * 1971-07-05 1974-12-31 Siemens Ag Planar four-layer-diode having a lateral arrangement of one of two partial transistors
US3831187A (en) * 1973-04-11 1974-08-20 Rca Corp Thyristor having capacitively coupled control electrode
US3896476A (en) * 1973-05-02 1975-07-22 Mitsubishi Electric Corp Semiconductor switching device
JPS5629458B2 (OSRAM) * 1973-07-02 1981-07-08
JPS50123282A (OSRAM) * 1974-03-15 1975-09-27
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
JPS5933986B2 (ja) * 1975-09-12 1984-08-20 三菱電機株式会社 半導体装置
US4087834A (en) * 1976-03-22 1978-05-02 General Electric Company Self-protecting semiconductor device
SU793421A3 (ru) * 1976-06-02 1980-12-30 Ббц Аг Браун Фототиристор
US4092703A (en) * 1977-03-15 1978-05-30 Kabushiki Kaisha Meidensha Gate controlled semiconductor device
DE2757295A1 (de) * 1977-12-22 1979-07-12 Licentia Gmbh Sicherungsschaltung fuer ein halbleiterelement
US4219833A (en) * 1978-05-22 1980-08-26 Electric Power Research Institute, Inc. Multigate light fired thyristor and method
US4301462A (en) * 1978-08-03 1981-11-17 Westinghouse Electric Corp. Light activated silicon switch with etched channel in cathode base and anode emitter communicating with cladded optical fiber
US4199774A (en) * 1978-09-18 1980-04-22 The Board Of Trustees Of The Leland Stanford Junior University Monolithic semiconductor switching device
JPS5574168A (en) * 1978-11-28 1980-06-04 Oki Electric Ind Co Ltd Pnpn switch
SE430450B (sv) * 1979-04-03 1983-11-14 Asea Ab Tvapoligt overstromsskydd for inkoppling i en stromforande ledning

Also Published As

Publication number Publication date
BR8007254A (pt) 1981-05-19
CA1156770A (en) 1983-11-08
JPS5683066A (en) 1981-07-07
EP0030274B1 (de) 1984-03-14
DE2945366C2 (OSRAM) 1990-05-31
DE2945366A1 (de) 1981-05-14
EP0030274A1 (de) 1981-06-17
US4613766A (en) 1986-09-23

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