JPS6096599A - 酸化物超伝導体薄膜の製造方法 - Google Patents

酸化物超伝導体薄膜の製造方法

Info

Publication number
JPS6096599A
JPS6096599A JP58202815A JP20281583A JPS6096599A JP S6096599 A JPS6096599 A JP S6096599A JP 58202815 A JP58202815 A JP 58202815A JP 20281583 A JP20281583 A JP 20281583A JP S6096599 A JPS6096599 A JP S6096599A
Authority
JP
Japan
Prior art keywords
thin film
oxide
superconductive
substrate
bpb
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58202815A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0218320B2 (enExample
Inventor
Yoshikazu Hidaka
日高　義和
Yoichi Enomoto
陽一 榎本
Takashi Inukai
犬飼　隆
Toshiaki Murakami
敏明 村上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP58202815A priority Critical patent/JPS6096599A/ja
Publication of JPS6096599A publication Critical patent/JPS6096599A/ja
Publication of JPH0218320B2 publication Critical patent/JPH0218320B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/32—Titanates; Germanates; Molybdates; Tungstates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP58202815A 1983-10-31 1983-10-31 酸化物超伝導体薄膜の製造方法 Granted JPS6096599A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58202815A JPS6096599A (ja) 1983-10-31 1983-10-31 酸化物超伝導体薄膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58202815A JPS6096599A (ja) 1983-10-31 1983-10-31 酸化物超伝導体薄膜の製造方法

Publications (2)

Publication Number Publication Date
JPS6096599A true JPS6096599A (ja) 1985-05-30
JPH0218320B2 JPH0218320B2 (enExample) 1990-04-25

Family

ID=16463654

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58202815A Granted JPS6096599A (ja) 1983-10-31 1983-10-31 酸化物超伝導体薄膜の製造方法

Country Status (1)

Country Link
JP (1) JPS6096599A (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63228696A (ja) * 1987-03-18 1988-09-22 Hitachi Ltd 電子装置
JPS63236219A (ja) * 1987-03-24 1988-10-03 Furukawa Electric Co Ltd:The 超電導線の製造方法
JPS6460925A (en) * 1987-08-31 1989-03-08 Semiconductor Energy Lab Fabricating method for superconductive material
JPS6487763A (en) * 1987-05-26 1989-03-31 Sumitomo Electric Industries Superconducting material
JPH01290596A (ja) * 1988-05-16 1989-11-22 Nippon Telegr & Teleph Corp <Ntt> 酸化物超伝導薄膜の形成方法
JPH029795A (ja) * 1988-03-06 1990-01-12 Internatl Business Mach Corp <Ibm> 超伝導物質の製造方法
US5057201A (en) * 1987-03-14 1991-10-15 Sumitomo Electric Industries, Ltd. Process for depositing a superconducting thin film
JPH05508610A (ja) * 1990-05-31 1993-12-02 ベル　コミュニケーションズ　リサーチ　インコーポレーテッド ａ，ｂ軸方向のペロブスカイト薄膜の成長方法
US5478800A (en) * 1987-02-05 1995-12-26 Sumitomo Electric Industries, Ltd. Process for preparing a superconducting thin film

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5478800A (en) * 1987-02-05 1995-12-26 Sumitomo Electric Industries, Ltd. Process for preparing a superconducting thin film
US5057201A (en) * 1987-03-14 1991-10-15 Sumitomo Electric Industries, Ltd. Process for depositing a superconducting thin film
JPS63228696A (ja) * 1987-03-18 1988-09-22 Hitachi Ltd 電子装置
JPS63236219A (ja) * 1987-03-24 1988-10-03 Furukawa Electric Co Ltd:The 超電導線の製造方法
JPS6487763A (en) * 1987-05-26 1989-03-31 Sumitomo Electric Industries Superconducting material
JPS6460925A (en) * 1987-08-31 1989-03-08 Semiconductor Energy Lab Fabricating method for superconductive material
JPH029795A (ja) * 1988-03-06 1990-01-12 Internatl Business Mach Corp <Ibm> 超伝導物質の製造方法
JPH01290596A (ja) * 1988-05-16 1989-11-22 Nippon Telegr & Teleph Corp <Ntt> 酸化物超伝導薄膜の形成方法
JPH05508610A (ja) * 1990-05-31 1993-12-02 ベル　コミュニケーションズ　リサーチ　インコーポレーテッド ａ，ｂ軸方向のペロブスカイト薄膜の成長方法

Also Published As

Publication number Publication date
JPH0218320B2 (enExample) 1990-04-25

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