JPS6095794A - 半導体集積回路 - Google Patents

半導体集積回路

Info

Publication number
JPS6095794A
JPS6095794A JP58200935A JP20093583A JPS6095794A JP S6095794 A JPS6095794 A JP S6095794A JP 58200935 A JP58200935 A JP 58200935A JP 20093583 A JP20093583 A JP 20093583A JP S6095794 A JPS6095794 A JP S6095794A
Authority
JP
Japan
Prior art keywords
memory
word line
memory element
voltage
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58200935A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0581999B2 (enrdf_load_stackoverflow
Inventor
Yuji Tanida
谷田　雄二
Takaaki Hagiwara
萩原　隆旦
Shinichi Minami
眞一 南
Shinji Nabeya
鍋谷　慎二
Takeshi Furuno
毅 古野
Ken Uchida
憲 内田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58200935A priority Critical patent/JPS6095794A/ja
Publication of JPS6095794A publication Critical patent/JPS6095794A/ja
Publication of JPH0581999B2 publication Critical patent/JPH0581999B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards

Landscapes

  • Read Only Memory (AREA)
JP58200935A 1983-10-28 1983-10-28 半導体集積回路 Granted JPS6095794A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58200935A JPS6095794A (ja) 1983-10-28 1983-10-28 半導体集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58200935A JPS6095794A (ja) 1983-10-28 1983-10-28 半導体集積回路

Publications (2)

Publication Number Publication Date
JPS6095794A true JPS6095794A (ja) 1985-05-29
JPH0581999B2 JPH0581999B2 (enrdf_load_stackoverflow) 1993-11-17

Family

ID=16432736

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58200935A Granted JPS6095794A (ja) 1983-10-28 1983-10-28 半導体集積回路

Country Status (1)

Country Link
JP (1) JPS6095794A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6273489A (ja) * 1985-09-25 1987-04-04 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JPS62177796A (ja) * 1985-10-15 1987-08-04 テキサス　インスツルメンツ　インコ−ポレイテツド バイアス回路とバイアス方法
US5644533A (en) * 1992-11-02 1997-07-01 Nvx Corporation Flash memory system, and methods of constructing and utilizing same
JP2006155765A (ja) * 2004-11-30 2006-06-15 Renesas Technology Corp 半導体集積回路
US7221610B2 (en) 2004-03-18 2007-05-22 Renesas Technology Corp. Charge pump circuit for generating high voltages required in read/write/erase/standby modes in non-volatile memory device
JP2011003275A (ja) * 2010-10-07 2011-01-06 Renesas Electronics Corp 半導体集積回路
WO2014002913A1 (ja) 2012-06-29 2014-01-03 株式会社フローディア 不揮発性半導体記憶装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5011341A (enrdf_load_stackoverflow) * 1973-05-04 1975-02-05
JPS53148256A (en) * 1977-05-30 1978-12-23 Nec Corp Nonvolatile semiconductor memory device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5011341A (enrdf_load_stackoverflow) * 1973-05-04 1975-02-05
JPS53148256A (en) * 1977-05-30 1978-12-23 Nec Corp Nonvolatile semiconductor memory device

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6273489A (ja) * 1985-09-25 1987-04-04 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JPS62177796A (ja) * 1985-10-15 1987-08-04 テキサス　インスツルメンツ　インコ−ポレイテツド バイアス回路とバイアス方法
US5644533A (en) * 1992-11-02 1997-07-01 Nvx Corporation Flash memory system, and methods of constructing and utilizing same
US7221610B2 (en) 2004-03-18 2007-05-22 Renesas Technology Corp. Charge pump circuit for generating high voltages required in read/write/erase/standby modes in non-volatile memory device
JP2006155765A (ja) * 2004-11-30 2006-06-15 Renesas Technology Corp 半導体集積回路
US7254084B2 (en) 2004-11-30 2007-08-07 Renesas Technology Corp. Data processing device
US7385853B2 (en) 2004-11-30 2008-06-10 Renesas Technology Corp. Data processing device
US7512007B2 (en) 2004-11-30 2009-03-31 Renesas Technology Corp. Data processing device
JP2011003275A (ja) * 2010-10-07 2011-01-06 Renesas Electronics Corp 半導体集積回路
WO2014002913A1 (ja) 2012-06-29 2014-01-03 株式会社フローディア 不揮発性半導体記憶装置
KR20150027261A (ko) 2012-06-29 2015-03-11 플로디아 코포레이션 불휘발성 반도체 기억 장치
US9343166B2 (en) 2012-06-29 2016-05-17 Floadia Corporation Non-volatile semiconductor storage device

Also Published As

Publication number Publication date
JPH0581999B2 (enrdf_load_stackoverflow) 1993-11-17

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