JPS6092656A - 絶縁ゲイト型半導体装置 - Google Patents

絶縁ゲイト型半導体装置

Info

Publication number
JPS6092656A
JPS6092656A JP58201428A JP20142883A JPS6092656A JP S6092656 A JPS6092656 A JP S6092656A JP 58201428 A JP58201428 A JP 58201428A JP 20142883 A JP20142883 A JP 20142883A JP S6092656 A JPS6092656 A JP S6092656A
Authority
JP
Japan
Prior art keywords
semiconductor
type
type semiconductor
insulated gate
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58201428A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0586665B2 (enExample
Inventor
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP58201428A priority Critical patent/JPS6092656A/ja
Publication of JPS6092656A publication Critical patent/JPS6092656A/ja
Publication of JPH0586665B2 publication Critical patent/JPH0586665B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP58201428A 1983-10-26 1983-10-26 絶縁ゲイト型半導体装置 Granted JPS6092656A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58201428A JPS6092656A (ja) 1983-10-26 1983-10-26 絶縁ゲイト型半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58201428A JPS6092656A (ja) 1983-10-26 1983-10-26 絶縁ゲイト型半導体装置

Publications (2)

Publication Number Publication Date
JPS6092656A true JPS6092656A (ja) 1985-05-24
JPH0586665B2 JPH0586665B2 (enExample) 1993-12-13

Family

ID=16440916

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58201428A Granted JPS6092656A (ja) 1983-10-26 1983-10-26 絶縁ゲイト型半導体装置

Country Status (1)

Country Link
JP (1) JPS6092656A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012186468A (ja) * 2011-02-17 2012-09-27 Semiconductor Energy Lab Co Ltd 半導体メモリ装置および半導体メモリ装置の作製方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012186468A (ja) * 2011-02-17 2012-09-27 Semiconductor Energy Lab Co Ltd 半導体メモリ装置および半導体メモリ装置の作製方法
US9257432B2 (en) 2011-02-17 2016-02-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and method of manufacturing semiconductor memory device

Also Published As

Publication number Publication date
JPH0586665B2 (enExample) 1993-12-13

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