JPS6086272A - スパツタ装置 - Google Patents

スパツタ装置

Info

Publication number
JPS6086272A
JPS6086272A JP19334583A JP19334583A JPS6086272A JP S6086272 A JPS6086272 A JP S6086272A JP 19334583 A JP19334583 A JP 19334583A JP 19334583 A JP19334583 A JP 19334583A JP S6086272 A JPS6086272 A JP S6086272A
Authority
JP
Japan
Prior art keywords
electrodes
substrate
sputtering
electrons
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19334583A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6365754B2 (enExample
Inventor
Naokichi Hosokawa
細川　直吉
Shiro Fukushima
福島　志郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Canon Anelva Corp
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp, Anelva Corp filed Critical Canon Anelva Corp
Priority to JP19334583A priority Critical patent/JPS6086272A/ja
Publication of JPS6086272A publication Critical patent/JPS6086272A/ja
Publication of JPS6365754B2 publication Critical patent/JPS6365754B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP19334583A 1983-10-18 1983-10-18 スパツタ装置 Granted JPS6086272A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19334583A JPS6086272A (ja) 1983-10-18 1983-10-18 スパツタ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19334583A JPS6086272A (ja) 1983-10-18 1983-10-18 スパツタ装置

Publications (2)

Publication Number Publication Date
JPS6086272A true JPS6086272A (ja) 1985-05-15
JPS6365754B2 JPS6365754B2 (enExample) 1988-12-16

Family

ID=16306350

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19334583A Granted JPS6086272A (ja) 1983-10-18 1983-10-18 スパツタ装置

Country Status (1)

Country Link
JP (1) JPS6086272A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4826584A (en) * 1986-04-17 1989-05-02 Dos Santos Pereiro Ribeiro Car Magnetron sputtering cathode
US5458759A (en) * 1991-08-02 1995-10-17 Anelva Corporation Magnetron sputtering cathode apparatus
WO2006113170A3 (en) * 2005-04-14 2007-05-03 Tango Systems Inc Sputtering system
US7682495B2 (en) 2005-04-14 2010-03-23 Tango Systems, Inc. Oscillating magnet in sputtering system

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3403550B2 (ja) * 1995-06-29 2003-05-06 松下電器産業株式会社 スパッタリング装置とスパッタリング方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59133370A (ja) * 1983-01-21 1984-07-31 Seiko Instr & Electronics Ltd マグネトロンスパツタ−装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59133370A (ja) * 1983-01-21 1984-07-31 Seiko Instr & Electronics Ltd マグネトロンスパツタ−装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4826584A (en) * 1986-04-17 1989-05-02 Dos Santos Pereiro Ribeiro Car Magnetron sputtering cathode
US5458759A (en) * 1991-08-02 1995-10-17 Anelva Corporation Magnetron sputtering cathode apparatus
WO2006113170A3 (en) * 2005-04-14 2007-05-03 Tango Systems Inc Sputtering system
US7682495B2 (en) 2005-04-14 2010-03-23 Tango Systems, Inc. Oscillating magnet in sputtering system

Also Published As

Publication number Publication date
JPS6365754B2 (enExample) 1988-12-16

Similar Documents

Publication Publication Date Title
JP4330315B2 (ja) プラズマ処理装置
US9812303B2 (en) Configurable variable position closed track magnetron
JP2924891B1 (ja) スパッタリング装置
US9249500B2 (en) PVD RF DC open/closed loop selectable magnetron
JP2000144399A (ja) スパッタリング装置
US20110198219A1 (en) Magnetron sputtering device
JP2001064770A (ja) スパッタリング装置
JPS6086272A (ja) スパツタ装置
JPH06505051A (ja) マグネトロンスパッタコーテイング法と回転磁石陰極を備えた装置
US5328582A (en) Off-axis magnetron sputter deposition of mirrors
JPH06172995A (ja) マグネトロンスパッタリング装置及びスパッタリングガン
WO1990013137A1 (en) Sputtering apparatus
JPH11302841A (ja) スパッタ装置
HK1008111B (en) Magnetron sputtering device and method for thin film coating
JP4865570B2 (ja) スパッタ源、スパッタ装置、薄膜の製造方法
JPH05148639A (ja) マグネトロンカソード電極
JP2001348663A (ja) スパッタリング装置
JPS6217175A (ja) スパツタリング装置
JP2001207258A (ja) 回転磁石およびインライン型スパッタリング装置
JPH03226570A (ja) スパッタリング装置
JPH03150355A (ja) スパッタリング装置
WO2023186295A1 (en) Deposition source, deposition source arrangement and deposition apparatus
JP3901365B2 (ja) スパッタ装置
JPH10330935A (ja) スパッタ装置
JPS6372870A (ja) プラズマ処理装置