JPS6085559A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS6085559A
JPS6085559A JP58193673A JP19367383A JPS6085559A JP S6085559 A JPS6085559 A JP S6085559A JP 58193673 A JP58193673 A JP 58193673A JP 19367383 A JP19367383 A JP 19367383A JP S6085559 A JPS6085559 A JP S6085559A
Authority
JP
Japan
Prior art keywords
register
transfer
signal charge
conductivity type
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58193673A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0570947B2 (enrdf_load_html_response
Inventor
Hideo Kanbe
秀夫 神戸
Hiroyuki Matsumoto
松本　博行
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP58193673A priority Critical patent/JPS6085559A/ja
Publication of JPS6085559A publication Critical patent/JPS6085559A/ja
Publication of JPH0570947B2 publication Critical patent/JPH0570947B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP58193673A 1983-10-17 1983-10-17 半導体装置 Granted JPS6085559A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58193673A JPS6085559A (ja) 1983-10-17 1983-10-17 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58193673A JPS6085559A (ja) 1983-10-17 1983-10-17 半導体装置

Publications (2)

Publication Number Publication Date
JPS6085559A true JPS6085559A (ja) 1985-05-15
JPH0570947B2 JPH0570947B2 (enrdf_load_html_response) 1993-10-06

Family

ID=16311876

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58193673A Granted JPS6085559A (ja) 1983-10-17 1983-10-17 半導体装置

Country Status (1)

Country Link
JP (1) JPS6085559A (enrdf_load_html_response)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62169363A (ja) * 1986-01-21 1987-07-25 Nec Corp 固体撮像装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62169363A (ja) * 1986-01-21 1987-07-25 Nec Corp 固体撮像装置

Also Published As

Publication number Publication date
JPH0570947B2 (enrdf_load_html_response) 1993-10-06

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