JPS6085520A - Pattern inspecting method - Google Patents
Pattern inspecting methodInfo
- Publication number
- JPS6085520A JPS6085520A JP58192400A JP19240083A JPS6085520A JP S6085520 A JPS6085520 A JP S6085520A JP 58192400 A JP58192400 A JP 58192400A JP 19240083 A JP19240083 A JP 19240083A JP S6085520 A JPS6085520 A JP S6085520A
- Authority
- JP
- Japan
- Prior art keywords
- stage
- speed
- inspection
- inspected
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、ホトマスク、プリント基板、LSIウェハー
の外観検査機のように、パターン走査を行ってその良否
判定を行なう際に、特に検査速度を同上させるバター/
検査方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention is particularly useful in improving the inspection speed when performing pattern scanning to determine the quality of the pattern, such as an appearance inspection machine for photomasks, printed circuit boards, and LSI wafers. butter/
Regarding inspection methods.
従来のホトマスク、あるいはLSIウェハーの外観検査
装置は、微細パターンを検出する必要から、第1図に示
すように一匿に検査可能な領域aは全画面Aに比べて非
常に小さい。そこで、全面検査のためには、機械的に被
検査対象が載ったステージを走査する必要がある。とこ
ろが、被検査対象は、場所によってたとえばICチップ
のスフ2イブ線上では、まったく検査する必要がない〇
′tたメモリ素子等では、メモリパターン部は非常に微
細パターン、の集合から成っているために、これに対応
して微細に検査する必要があるが、周辺部のボンティン
グパッドの付近ではパターン密度が粗であるために、こ
れに対応して粗に検査してもさしつかえない。ところが
従来の検査装置では、パターン密度の粗密にかかわらず
、またスクライブエリヤのように検査不用の領域までし
らみつぶしに精密に検査をしている。このために、本来
検査性能に関係ない検査時間が加算されて、全体の検査
時間の増加を招いていた。Since the conventional photomask or LSI wafer visual inspection apparatus needs to detect fine patterns, the area a that can be inspected at once, as shown in FIG. 1, is much smaller than the entire screen A. Therefore, in order to inspect the entire surface, it is necessary to mechanically scan the stage on which the object to be inspected is placed. However, depending on the location of the object to be inspected, for example, there is no need to inspect it at all on the two-way line of an IC chip.In memory devices, etc., the memory pattern portion consists of a collection of very fine patterns. Although it is necessary to carry out a correspondingly fine inspection, since the pattern density is coarse in the vicinity of the bonding pad in the peripheral area, a correspondingly coarse inspection is acceptable. However, conventional inspection equipment thoroughly and precisely inspects areas that do not require inspection, such as scribe areas, regardless of the pattern density. For this reason, an inspection time that is not originally related to inspection performance is added, resulting in an increase in the overall inspection time.
本発明の目的は、上記した従来の検査方式の無駄を排除
し、検査時間を短縮したパターン検査方法を提供するこ
とにおる。An object of the present invention is to provide a pattern inspection method that eliminates the waste of the conventional inspection methods described above and shortens inspection time.
本発明は、上記目的を達成するために、ノ(ターン検査
不用の部分は高速に走査ステージを送ることによって、
検査時間の短縮を図るようになしたことを特徴とする0
〔発明の実施例〕
本発明の一実施例をIC製造用のマスク検査機について
示す。第2図は概要図であり、XYXステージ上に塔載
した被検査マスク2を光源5で照明し、光電検出器3,
4でマスク2上のノくターンを検出しなからXYステー
ジ1を駆動走査し、マスク全面のパターン欠陥検査を欠
陥判定部6で実行するものである。このXYステージ1
の駆動方式は、ステージを(+)Y方向にX軸部動部9
で駆動し、その終端でY軸部動部8によ!D (+)
Y方向に1視野分(数十〜数百ミクロン)スツプ移動さ
せ、今度は←)Y方向に折り返し再び(+)Y方向にX
軸駆動する動作をくり返すもので、ステージポジション
センサ10の位置情報にもとづき、マイクロプロセッサ
7によって走査開始、終了及び折り返しを制御し、Y方
向に等速・、往復動作、Y方向に歩進動作を行って、マ
スク2の全面を検査するものである。In order to achieve the above object, the present invention has the following objectives:
0 [Embodiment of the Invention] An embodiment of the present invention will be described regarding a mask inspection machine for IC manufacturing. FIG. 2 is a schematic diagram in which a mask 2 to be inspected mounted on an XYX stage is illuminated with a light source 5, and a photoelectric detector 3,
After the notch turn on the mask 2 is detected in step 4, the XY stage 1 is driven and scanned, and the defect determining section 6 performs a pattern defect inspection on the entire surface of the mask. This XY stage 1
The drive method is to move the stage in the (+)Y direction by moving the X-axis moving part 9.
The end of the drive is driven by the Y-axis moving part 8! D (+)
Move one field of view (several tens to hundreds of microns) in the Y direction, then turn back to the Y direction (←) and move again (+) to the X direction in the Y direction.
It repeats the axis driving operation, and based on the position information from the stage position sensor 10, the microprocessor 7 controls the scanning start, end, and return, and performs constant speed, reciprocating movement in the Y direction, and step movement in the Y direction. The entire surface of the mask 2 is inspected.
マスクパターンは第6図に示すように、1個のます目が
1個の集積回路となる規則的パターン11゜12.13
°°・のくシ返しから成シ、これがxyY方向基盤状に
配列されている。第3図を拡大したものを第4図に示す
。光電検出器の視野14は、たとえは0.16μmx1
2Bμmといったもので、全体のマスク寸法に比べて非
常に小さいために、第4図の矢印で示すような走査がX
Yステージ1を駆動して行わ扛る。この時実際に集積回
路として使われるパターンは11及び12の部分であり
、15の部分は集積回路製作時の切断のためのダイシン
グエリヤで、検査する必要がない。検査の速度は、第2
図の照明光源5とその光学系、光電検出器3,4、欠陥
判定部6等の性能で決ま5、xYステージ1の駆動速度
で制限を受けている訳ではないために、検査不用なエリ
ヤすなわち第4図に示す15で示した部分では、ステー
ジ速度を可能な限り上げて検査時間の短縮をはかるよう
にしている。As shown in Figure 6, the mask pattern is a regular pattern 11°12.13 in which each square constitutes one integrated circuit.
These are arranged in a basic pattern in the x, y, and y directions. FIG. 4 shows an enlarged version of FIG. 3. The field of view 14 of the photoelectric detector is, for example, 0.16 μm x 1
2Bμm, which is very small compared to the overall mask size, so the scanning shown by the arrow in Figure 4 is
The Y stage 1 is driven to carry out the plucking. At this time, the patterns actually used as an integrated circuit are portions 11 and 12, and the portion 15 is a dicing area for cutting during production of the integrated circuit and does not need to be inspected. The speed of inspection is second
This is determined by the performance of the illumination light source 5 shown in the figure, its optical system, photoelectric detectors 3, 4, defect determination section 6, etc. 5, and is not limited by the drive speed of the xY stage 1, so there are areas that do not require inspection. That is, in the portion indicated by 15 in FIG. 4, the stage speed is increased as much as possible to shorten the inspection time.
第5図は、本発明によるXYステージ1のX軸の速度一
時間のダイヤグラムを表わしたもので、集積回路パター
ン11を検査中の速度が区間16で、ダイシングエリヤ
15を移動中の速度が区間17で、集積回路パターン1
2を検査中の速度が区間18で示されている。すなわち
、有効バタン検査中は速度V、で、検査に関係ないとこ
ろではv2でXステージを駆動している。同様にYステ
ージでも、光電検出器3,4がパターン有効部分以外の
ところにかかった時は速度を上げて検査時間の短縮をは
かることができる。パターンの有効部分がどこにあるか
の情報は、チップ間隔、ダイシングエリヤ寸法等の情報
を、第2図においてステージ制御を行うマイクロプロセ
ッサ7にあらかじめ記憶させておき、実際の位置テーク
をステージポジションセンサ10で読みと9比較するこ
とにより、容易に判別ができる。FIG. 5 is a diagram showing the speed of the X-axis of the XY stage 1 in one hour according to the present invention. 17, integrated circuit pattern 1
The speed during testing 2 is shown in section 18. That is, the X stage is driven at a speed of V during an effective slam test, and at a speed of V2 when not related to the test. Similarly, in the Y stage, when the photoelectric detectors 3 and 4 cover areas other than the effective pattern area, the speed can be increased to shorten the inspection time. Information on where the effective part of the pattern is located, such as chip spacing and dicing area dimensions, is stored in advance in the microprocessor 7 that controls the stage in FIG. 2, and the actual position is determined by the stage position sensor 10. You can easily distinguish by comparing the reading with 9.
以上はダイシングエリヤ15を検査不用部として高速移
動スキラグするものであるが、パターンの密度が粗で、
精密検査不用な部分では、Y方向のステップ送p量を増
して検査精度を相<シて、検査時間の短縮をはかること
も可能である。この密度情報も上記マイクロプロセッサ
7にあらかじめ記憶さnておけばよい。In the above method, the dicing area 15 is used as an unnecessary part for inspection and is moved at high speed, but the density of the pattern is coarse.
In areas where detailed inspection is not required, it is also possible to increase the step feed amount in the Y direction to reduce inspection accuracy and shorten inspection time. This density information may also be stored in the microprocessor 7 in advance.
本発明によれば、たとえばステージ移動速度2.5mm
/秒で検査するマスク検査装置において、1回スキャン
するには10100mmX100 の、マスクで約40
秒必要とするが、ダイシングエリヤ15で速度を上げる
ことにより、これを2秒短縮できるとする01回のスキ
ャンで128μmY方向に進むとして、全体のスキャン
領域を100 mmOとした時、全体での短縮時間は
井26分
従って26分の時間短縮がはかれる。According to the present invention, for example, the stage movement speed is 2.5 mm.
In a mask inspection device that inspects at a speed of 10,100 mm x 100 per second, a mask of approximately 40
However, by increasing the speed in dicing area 15, this can be shortened by 2 seconds.Assuming that one scan moves 128 μm in the Y direction, and the entire scan area is 100 mmO, the overall reduction will be The time is 26 minutes, so a time reduction of 26 minutes is achieved.
第1図はマスクの検査のステージ走査を表わす平面図、
第2図はマスク検査機の概念図、第3図はマスクのバタ
ン配列を示す平面図、第4図はマスクのパターンとXY
ステージ、光電検出器の走査状態を表わす第6図の一部
拡大図、第5図は本発明のXYステージの速度ダイヤグ
ラムである。
1 ・・・XYステージ、
2・・・マスク、
6.4・・・光電検出器、
7 ・・・マイクロプロセッサ、
8 ・・・Y軸駆動部、
9・・・ X軸駆動部、
10・・・ステージポジションセンサ、11.12.1
3・・・集積回路パターン、14・・・光電検出器の視
野、
15・・・ダイシングエリヤ。
才10
第3図
lFigure 1 is a plan view showing stage scanning for mask inspection;
Figure 2 is a conceptual diagram of the mask inspection machine, Figure 3 is a plan view showing the mask button arrangement, and Figure 4 is the mask pattern and XY
A partially enlarged view of FIG. 6 showing the scanning state of the stage and photoelectric detector, and FIG. 5 is a speed diagram of the XY stage of the present invention. 1... XY stage, 2... Mask, 6.4... Photoelectric detector, 7... Microprocessor, 8... Y-axis drive section, 9... X-axis drive section, 10.・・Stage position sensor, 11.12.1
3... Integrated circuit pattern, 14... Field of view of photoelectric detector, 15... Dicing area. Age 10 Figure 3 l
Claims (1)
るパターン検査装置において、上記XYステージを、被
検査対象が検査部分におる時に第1の速度で移動せしめ
、被検査対象が検査不用部分にある時に上記第1の速度
よシ早い第2の速度で移動せしめるように構成したこと
を特徴とするパターン検査方法。In a pattern inspection apparatus that scans and inspects an object to be inspected mounted on an xy stage, the XY stage is moved at a first speed when the object to be inspected is in an inspection area, and the object to be inspected is in an area not to be inspected. 1. A pattern inspection method characterized in that the pattern inspection method is configured to move at a second speed faster than the first speed when the pattern inspection method is at a second speed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58192400A JPS6085520A (en) | 1983-10-17 | 1983-10-17 | Pattern inspecting method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58192400A JPS6085520A (en) | 1983-10-17 | 1983-10-17 | Pattern inspecting method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6085520A true JPS6085520A (en) | 1985-05-15 |
Family
ID=16290677
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58192400A Pending JPS6085520A (en) | 1983-10-17 | 1983-10-17 | Pattern inspecting method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6085520A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01166780A (en) * | 1987-12-23 | 1989-06-30 | Bridgestone Corp | Racket frame |
JP2009009771A (en) * | 2007-06-27 | 2009-01-15 | Jeol Ltd | Sample transfer method of transmission electron microscope |
JP2015036719A (en) * | 2013-08-12 | 2015-02-23 | 株式会社ホロン | Ultrahigh speed review device and ultrahigh speed review method |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5327479A (en) * | 1976-08-26 | 1978-03-14 | Nec Corp | Xxray t ester for bonded surface |
JPS5698835A (en) * | 1980-01-11 | 1981-08-08 | Hitachi Ltd | Method of recognition of semiconductor pellet |
-
1983
- 1983-10-17 JP JP58192400A patent/JPS6085520A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5327479A (en) * | 1976-08-26 | 1978-03-14 | Nec Corp | Xxray t ester for bonded surface |
JPS5698835A (en) * | 1980-01-11 | 1981-08-08 | Hitachi Ltd | Method of recognition of semiconductor pellet |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01166780A (en) * | 1987-12-23 | 1989-06-30 | Bridgestone Corp | Racket frame |
JP2009009771A (en) * | 2007-06-27 | 2009-01-15 | Jeol Ltd | Sample transfer method of transmission electron microscope |
JP2015036719A (en) * | 2013-08-12 | 2015-02-23 | 株式会社ホロン | Ultrahigh speed review device and ultrahigh speed review method |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100710721B1 (en) | An apparatus and method for inspecting mark defects and method for manufacturing a photomask | |
JPH0318708A (en) | Method and device for inspecting surface | |
JP2003035680A (en) | Inspection method for semiconductor device | |
US4623256A (en) | Apparatus for inspecting mask used for manufacturing integrated circuits | |
JP4266971B2 (en) | Pattern inspection apparatus, pattern inspection method, and inspection target sample | |
US20070165938A1 (en) | Pattern inspection apparatus and method and workpiece tested thereby | |
US20070146707A1 (en) | Pattern inspection apparatus and method along with workpiece tested thereby and management method of workpiece under testing | |
JPS6085520A (en) | Pattern inspecting method | |
JP2001183301A (en) | Apparatus and method for inspecting flaw | |
JPH04207047A (en) | Inspection apparatus | |
JPH06252230A (en) | Method and apparatus for inspection of defect | |
JP2996264B2 (en) | Method for erasing IC chip removal area | |
JPS6366446A (en) | Foreign matter inspecting device | |
JP2603078B2 (en) | Defect inspection equipment | |
JPH07159333A (en) | Apparatus and method for inspection of appearance | |
JPH08102478A (en) | Crystal defect detecting equipment | |
US7457454B1 (en) | Detailed grey scale inspection method and apparatus | |
JPH03165534A (en) | Defect inspecting device | |
JPH0643110A (en) | Detecting method for defect of resist pattern | |
JPS6157838A (en) | Inspecting method of outer appearance | |
JPH043107B2 (en) | ||
JP2005017168A (en) | External appearance inspection apparatus, external appearance inspection method, and method for manufacturing semiconductor chip | |
JPS63122119A (en) | Inspective method for photomask for reduction stepper | |
JPH0351747A (en) | Pattern inspecting apparatus | |
JP2004117016A (en) | Semiconductor wafer defect inspecting apparatus |