JPS6081750A - Aperture diaphragm and its manufacturing method - Google Patents
Aperture diaphragm and its manufacturing methodInfo
- Publication number
- JPS6081750A JPS6081750A JP18952683A JP18952683A JPS6081750A JP S6081750 A JPS6081750 A JP S6081750A JP 18952683 A JP18952683 A JP 18952683A JP 18952683 A JP18952683 A JP 18952683A JP S6081750 A JPS6081750 A JP S6081750A
- Authority
- JP
- Japan
- Prior art keywords
- opening
- silicon nitride
- thin film
- aperture diaphragm
- nitride film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000010408 film Substances 0.000 claims abstract description 24
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 21
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000010409 thin film Substances 0.000 claims abstract description 21
- 238000010894 electron beam technology Methods 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000013078 crystal Substances 0.000 claims abstract description 10
- 238000010521 absorption reaction Methods 0.000 claims abstract description 6
- 230000001681 protective effect Effects 0.000 claims abstract description 3
- 239000004065 semiconductor Substances 0.000 claims abstract 3
- 229910052751 metal Inorganic materials 0.000 claims abstract 2
- 239000002184 metal Substances 0.000 claims abstract 2
- 230000000295 complement effect Effects 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 239000003302 ferromagnetic material Substances 0.000 claims 1
- 229910001385 heavy metal Inorganic materials 0.000 claims 1
- -1 nitride nitride Chemical class 0.000 claims 1
- 230000003014 reinforcing effect Effects 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052710 silicon Inorganic materials 0.000 abstract description 8
- 239000010703 silicon Substances 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 5
- 238000007747 plating Methods 0.000 abstract description 5
- 238000000992 sputter etching Methods 0.000 abstract description 2
- 239000010931 gold Substances 0.000 description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は電子ビーム露光装置における電子ビームの断面
形状を規定するアパーチャ絞シとその製造方法に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an aperture diaphragm that defines the cross-sectional shape of an electron beam in an electron beam exposure apparatus, and a method for manufacturing the aperture diaphragm.
電子ビーム露光装置、特に電子ビームの断面形いては、
寸法精度の高いアパーチャ絞ルが必要とされている。こ
の方式では２つの正方形のアパーチャに電子ビームを照
射し、上のアパーチャの像を下のアパーチャの上に投影
する。上下のアパーチャの間においた偏向器によって電
子ビームの方向を制御すると、アパーチャの重なシ方が
変化して種々の大きさの面積をもつ矩形断面の電子ビー
ムを得る。このビームを材料上に縮小投影して露光する
。このように可変面積露光方式では、アパーチャ絞シの
寸法精度によって電子ビームの矩形形状が規定されるの
で、高精度なアパーチャ絞シが必要である。これに対し
て従来のアパーチャ絞シは、モリブデン（Ｍｏ）の刃状
板を４枚重ねて矩形スリットを形成していた。このよう
な構造ではスリットの平行度及び直交度に誤差が生じや
すいために、露光パターンの矩形形状を歪ませたり、矩
形パターンのつなぎ精度を低下させたシする原因となっ
ていた。またアパーチャ絞シの開口形状が同一平面上に
ないことも誤差音生じる原因となっていた。特に、直交
度の誤差については電子ビームの矩形断面を縮小しても
、角度については元の値がそのまま保たれるので、アパ
ーチャ絞シの寸法精度を決める大きな侠因となっていた
。Electron beam exposure equipment, especially the cross-sectional shape of the electron beam,
There is a need for an aperture stop with high dimensional accuracy. In this method, two square apertures are irradiated with an electron beam, and the image of the upper aperture is projected onto the lower aperture. When the direction of the electron beam is controlled by a deflector placed between the upper and lower apertures, the direction in which the apertures overlap changes to obtain electron beams with rectangular cross sections of various sizes. This beam is reduced and projected onto the material for exposure. In this way, in the variable area exposure method, the rectangular shape of the electron beam is defined by the dimensional accuracy of the aperture diaphragm, and therefore a highly accurate aperture diaphragm is required. On the other hand, in the conventional aperture diaphragm, a rectangular slit is formed by stacking four molybdenum (Mo) blade-like plates. In such a structure, errors tend to occur in the parallelism and orthogonality of the slits, which causes distortion of the rectangular shape of the exposure pattern and a reduction in the accuracy of connecting the rectangular patterns. Furthermore, the fact that the opening shapes of the aperture diaphragm are not on the same plane also causes error noise. In particular, the orthogonality error was a major factor in determining the dimensional accuracy of the aperture diaphragm because even if the rectangular cross section of the electron beam was reduced, the original value of the angle remained unchanged.
本発明は上記の点を考庶して、寸法精度の高いアパーチ
ャ絞シとその製造方法を提供することを目的とする。In consideration of the above points, the present invention aims to provide an aperture diaphragm with high dimensional accuracy and a manufacturing method thereof.
以下図を参照しながら本発明の詳細な説明する。The present invention will be described in detail below with reference to the drawings.
第１図から第８図までの図は本発明によるアパーチャ絞
シの主要製造工程におりる断面図を順次示したものであ
る。The figures from FIG. 1 to FIG. 8 are sequential cross-sectional views showing the main manufacturing steps of the aperture diaphragm according to the present invention.
第１図は（１００）面を表面とするシリコン単結晶基板
ｌである。第２図はシリコン単結晶基板１の一方の表面
上にＣＶＤ法によシリコン窒化膜２を形成し、アパーチ
ャ絞シの開口部に該当する部分のシリコン窒化膜を蝕刻
除去したものである。FIG. 1 shows a silicon single crystal substrate l having a (100) plane as a surface. In FIG. 2, a silicon nitride film 2 is formed on one surface of a silicon single crystal substrate 1 by the CVD method, and the silicon nitride film 2 is etched away at a portion corresponding to the opening of the aperture diaphragm.
第３図は、シリコン単結晶基板のもつ一方の表面上に応
力調整の行いやすいプラズマＣＶＤ法に第４図は、上記
シリコン蟹化膜３の上にスパッタリング法を用いてメッ
キの電導層となるＴｔ薄膜４とＡｕ薄膜５と順次形成し
たものである。Fig. 3 shows a plasma CVD method that is easy to adjust stress on one surface of a silicon single crystal substrate, and Fig. 4 shows a sputtering method used on the silicon crab film 3 to form a conductive layer for plating. A Tt thin film 4 and an Au thin film 5 are formed sequentially.
第５図は上記Ａｕ薄膜５上にレジスト６を塗布し、所望
のアパーチャ開口形状有するマスクパターンを転写して
、マスクと相補の関係にあるパターンをレジスト６によ
シ形成したものである。In FIG. 5, a resist 6 is applied onto the Au thin film 5, a mask pattern having a desired aperture opening shape is transferred, and a pattern complementary to the mask is formed on the resist 6.
第６図は上記レジストパターン６以外の部分を電気メツ
キ法によｐ Ａｕメッキすることによシ、レジストパタ
ーンと相補のパターンを成す電子線吸収層７を形成し、
先のレジスト６を除去したものである。メッキ層の膜厚
は電子線の加速電圧によシ異るがベーテレンジよシも大
きければよく、例えば２０ＫＶについて約２ｐｍ必要で
ある。第７図はイオンエツチング法によυ、前記電子線
吸収層７の開口部分のＡｕ薄膜５及びＴ１薄膜４をシリ
コン窒化膜３が露出するまで除去した後に、金メツキ側
を治具で保護し、裏面のみ露出させ、かつシリコン窒化
膜２を保護マスクとしてシリコン単結晶基板１の露出部
を異方性エツチングしたものである。FIG. 6 shows that an electron beam absorbing layer 7 having a pattern complementary to the resist pattern is formed by plating the parts other than the resist pattern 6 with p-Au using an electroplating method.
This is the result of removing the previous resist 6. The thickness of the plating layer varies depending on the accelerating voltage of the electron beam, but it only needs to be larger than the beta range; for example, about 2 pm is required for 20 KV. FIG. 7 shows that after the Au thin film 5 and T1 thin film 4 in the opening of the electron beam absorption layer 7 are removed by ion etching until the silicon nitride film 3 is exposed, the gold plating side is protected with a jig. , the exposed portion of silicon single crystal substrate 1 is anisotropically etched with only the back side exposed and using silicon nitride film 2 as a protective mask.
第８図は電子線吸収層７の開口部分のシリコン窒化膜３
をエツチング除去したものである。FIG. 8 shows the silicon nitride film 3 in the opening part of the electron beam absorption layer 7.
is removed by etching.
本発明によって得られた電子ビーム露光装置用アパーチ
ャ絞シは、従来の７パーチヤ絞シに比較して寸法精度の
高い、更に具体的には直交度が１桁以上高く、平行度も
改良された開口形状を有していた。また、アパーチャ絞
シの開口形状が同一平面上に形成されるので、寸法精度
の高いビーム形状を得ることが可能となった。The aperture diaphragm for electron beam exposure equipment obtained by the present invention has higher dimensional accuracy than the conventional 7-aperture diaphragm, and more specifically, the orthogonality is more than an order of magnitude higher, and the parallelism is also improved. It had an opening shape. Furthermore, since the aperture shapes of the aperture diaphragm are formed on the same plane, it is possible to obtain a beam shape with high dimensional accuracy.
第１図から第８図は本発明による電子ビーム露光装置用
アパーチャ絞シの製造方法の一実施例について、その主
要工程における断面を順次示した図である。
１・・・シリコン単結晶基板、２・・・シリコン窒化膜
、３・・・シリコン窒化膜、４・・・Ｔ１薄膜、５−・
Ａｕ薄膜、６・−レジスト、７・−・電子線吸収層を形
成するために電気メツキ法によシ形成されたＡｕ層。1 to 8 are sequential cross-sectional views showing the main steps of an embodiment of the method of manufacturing an aperture diaphragm for an electron beam exposure apparatus according to the present invention. DESCRIPTION OF SYMBOLS 1... Silicon single crystal substrate, 2... Silicon nitride film, 3... Silicon nitride film, 4... T1 thin film, 5-...
Au thin film, 6.-Resist, 7.--Au layer formed by electroplating to form an electron beam absorption layer.
Claims (1)
れた半導体単結晶基板の補強支持梁の上に前記開口寸法
以上の開口が形成されたシリコン窒化膜が設けられ、こ
のシリコン窒化膜上にアパーチャ絞シの開口を規定しベ
ーテレンジよシ厚い金属膜のパターンが設けられている
ことを特徴とするアパーチャ絞シ。 ２ 半導体単結晶基板の裏面にシリコン窒化膜を形成し
た後に、アパーチャ絞シの開口部と同じかあるいはそれ
よシ広い部分のシリコン窒化膜を蝕刻除去する工程と、
前記基板のもう一方の表面上にシリコン窒化膜を形成し
て、このシリコン窒化膜上にスパッタリング法を用いて
Ｔｉ薄膜およびＡｕ薄膜を順次形成する工程と、とのＡ
ｕ薄膜上てアパーチャ絞シの開口部の形状を規定するレ
ジストパターンを形成した後、電気メツキ法を用いて強
磁性体でない重金属をベーテレンジよシ厚く選択メッキ
することによシ、前記レジストパターンと相補のバタ一
二・を成す電子線吸収層を形成する工程と、このレジス
トを除去し、開口部に該当する部分の前記Ａｕ薄膜およ
びＴｉ薄膜を除去する工程と、前記基板の背面上に残さ
れたシリコン窒化膜を保護マスクとして、アパーチャ絞
シの開口部を含むような部分の基板を蝕刻除去する工程
と、開口部分に残された前記シダコン窒化ｊ換を除去す
る工程を含むことを特徴としたアパーチャ絞シの製造方
法。[Scope of Claims] 1. A silicon nitride film in which an opening larger than the opening size is provided on a reinforcing support beam of a semiconductor single crystal substrate in which an opening larger than the opening size of the aperture diaphragm is provided, An aperture diaphragm characterized in that a metal film pattern that defines the opening of the aperture diaphragm and is thicker than the beta range is provided on the silicon nitride film. 2. After forming a silicon nitride film on the back surface of the semiconductor single crystal substrate, etching away the silicon nitride film in a portion that is the same as or wider than the opening of the aperture diaphragm;
A step of forming a silicon nitride film on the other surface of the substrate and sequentially forming a Ti thin film and an Au thin film on the silicon nitride film using a sputtering method.
After forming a resist pattern that defines the shape of the opening of the aperture diaphragm on the U thin film, electroplating is used to selectively plate a heavy metal that is not a ferromagnetic material as thick as a beta range. A step of forming an electron beam absorption layer forming a complementary pattern, a step of removing this resist, and a step of removing the Au thin film and Ti thin film in the portion corresponding to the opening, and a step of removing the Au thin film and Ti thin film in the portion corresponding to the opening, and a step of removing the resist, and removing the Au thin film and Ti thin film in the portion corresponding to the opening. using the silicon nitride film as a protective mask, etching away the portion of the substrate that includes the opening of the aperture diaphragm, and removing the nitride nitride remaining in the opening. A manufacturing method for an aperture diaphragm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18952683A JPS6081750A (en) | 1983-10-11 | 1983-10-11 | Aperture diaphragm and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18952683A JPS6081750A (en) | 1983-10-11 | 1983-10-11 | Aperture diaphragm and its manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6081750A true JPS6081750A (en) | 1985-05-09 |
Family
ID=16242761
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18952683A Pending JPS6081750A (en) | 1983-10-11 | 1983-10-11 | Aperture diaphragm and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6081750A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0344515A2 (en) * | 1988-05-31 | 1989-12-06 | Siemens Aktiengesellschaft | Process for producing a beam-forming aperture for a lithography apparatus |
| EP0344513A2 (en) * | 1988-05-31 | 1989-12-06 | Siemens Aktiengesellschaft | Process for the manufacture of a steering plate for a lithography apparatus |
| EP0457632A2 (en) * | 1990-04-16 | 1991-11-21 | Fujitsu Limited | Blanking aperture array and method of producing same |
| US5756237A (en) * | 1996-01-31 | 1998-05-26 | Hoya Corporation | Production of projection mask |
-
1983
- 1983-10-11 JP JP18952683A patent/JPS6081750A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0344515A2 (en) * | 1988-05-31 | 1989-12-06 | Siemens Aktiengesellschaft | Process for producing a beam-forming aperture for a lithography apparatus |
| EP0344513A2 (en) * | 1988-05-31 | 1989-12-06 | Siemens Aktiengesellschaft | Process for the manufacture of a steering plate for a lithography apparatus |
| EP0457632A2 (en) * | 1990-04-16 | 1991-11-21 | Fujitsu Limited | Blanking aperture array and method of producing same |
| US5215623A (en) * | 1990-04-16 | 1993-06-01 | Fujitsu Limited | Blanking aperture array and method of producing same |
| US5756237A (en) * | 1996-01-31 | 1998-05-26 | Hoya Corporation | Production of projection mask |
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