JPS6077415A - 半導体気相成長装置のプロセス制御装置 - Google Patents
半導体気相成長装置のプロセス制御装置Info
- Publication number
- JPS6077415A JPS6077415A JP18495483A JP18495483A JPS6077415A JP S6077415 A JPS6077415 A JP S6077415A JP 18495483 A JP18495483 A JP 18495483A JP 18495483 A JP18495483 A JP 18495483A JP S6077415 A JPS6077415 A JP S6077415A
- Authority
- JP
- Japan
- Prior art keywords
- resistivity
- thickness
- batch
- process program
- program
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 38
- 238000004886 process control Methods 0.000 title claims description 34
- 230000008569 process Effects 0.000 claims abstract description 85
- 238000012937 correction Methods 0.000 claims abstract description 43
- 239000007789 gas Substances 0.000 claims description 75
- 238000001947 vapour-phase growth Methods 0.000 claims description 39
- 230000008859 change Effects 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 9
- 239000012808 vapor phase Substances 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000012071 phase Substances 0.000 claims 1
- 239000002019 doping agent Substances 0.000 abstract description 15
- 238000000034 method Methods 0.000 abstract description 15
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 abstract description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 18
- 238000010586 diagram Methods 0.000 description 18
- 235000012431 wafers Nutrition 0.000 description 12
- SDTHIDMOBRXVOQ-UHFFFAOYSA-N 5-[bis(2-chloroethyl)amino]-6-methyl-1h-pyrimidine-2,4-dione Chemical compound CC=1NC(=O)NC(=O)C=1N(CCCl)CCCl SDTHIDMOBRXVOQ-UHFFFAOYSA-N 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000005587 bubbling Effects 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 241000257465 Echinoidea Species 0.000 description 1
- UOACKFBJUYNSLK-XRKIENNPSA-N Estradiol Cypionate Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H](C4=CC=C(O)C=C4CC3)CC[C@@]21C)C(=O)CCC1CCCC1 UOACKFBJUYNSLK-XRKIENNPSA-N 0.000 description 1
- 241000628997 Flos Species 0.000 description 1
- 101000730648 Homo sapiens Phospholipase A-2-activating protein Proteins 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 101100192716 Mus musculus Purg gene Proteins 0.000 description 1
- 241000234295 Musa Species 0.000 description 1
- 102100032572 Phospholipase A-2-activating protein Human genes 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000013479 data entry Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- QNDQILQPPKQROV-UHFFFAOYSA-N dizinc Chemical compound [Zn]=[Zn] QNDQILQPPKQROV-UHFFFAOYSA-N 0.000 description 1
- 208000035710 familial 1 hypercholesterolemia Diseases 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Feedback Control In General (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18495483A JPS6077415A (ja) | 1983-10-05 | 1983-10-05 | 半導体気相成長装置のプロセス制御装置 |
| US06/873,119 US4772485A (en) | 1983-10-05 | 1986-06-10 | Process control system of semiconductor vapor phase growing apparatus |
| US07/418,724 US5244500A (en) | 1983-10-05 | 1989-10-03 | Process control system of semiconductor vapor phase growth apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18495483A JPS6077415A (ja) | 1983-10-05 | 1983-10-05 | 半導体気相成長装置のプロセス制御装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6077415A true JPS6077415A (ja) | 1985-05-02 |
| JPH0570299B2 JPH0570299B2 (OSRAM) | 1993-10-04 |
Family
ID=16162251
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18495483A Granted JPS6077415A (ja) | 1983-10-05 | 1983-10-05 | 半導体気相成長装置のプロセス制御装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6077415A (OSRAM) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63229827A (ja) * | 1987-03-19 | 1988-09-26 | Tokyo Electron Ltd | アツシング装置 |
| JPH03108316A (ja) * | 1989-09-21 | 1991-05-08 | Ushio Inc | ウエハ周辺露光方法 |
| JPH04125947A (ja) * | 1990-09-17 | 1992-04-27 | Fujitsu Ltd | 成膜システムのフィードバック装置 |
| CN115491761A (zh) * | 2021-06-18 | 2022-12-20 | 胜高股份有限公司 | 单片式外延生长装置的控制装置和控制方法以及外延晶片的制造系统 |
-
1983
- 1983-10-05 JP JP18495483A patent/JPS6077415A/ja active Granted
Non-Patent Citations (1)
| Title |
|---|
| SOLID STATE TECHNOLOGY=1972 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63229827A (ja) * | 1987-03-19 | 1988-09-26 | Tokyo Electron Ltd | アツシング装置 |
| JPH03108316A (ja) * | 1989-09-21 | 1991-05-08 | Ushio Inc | ウエハ周辺露光方法 |
| JPH04125947A (ja) * | 1990-09-17 | 1992-04-27 | Fujitsu Ltd | 成膜システムのフィードバック装置 |
| CN115491761A (zh) * | 2021-06-18 | 2022-12-20 | 胜高股份有限公司 | 单片式外延生长装置的控制装置和控制方法以及外延晶片的制造系统 |
| CN115491761B (zh) * | 2021-06-18 | 2024-02-27 | 胜高股份有限公司 | 单片式外延生长装置的控制装置和控制方法以及外延晶片的制造系统 |
| US12261065B2 (en) | 2021-06-18 | 2025-03-25 | Sumco Corporation | Control device and control method for single-wafer processing epitaxial growth apparatus, and epitaxial wafer production system |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0570299B2 (OSRAM) | 1993-10-04 |
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