JPS6075546A - 高温強度に優れたモリブデン材 - Google Patents
高温強度に優れたモリブデン材Info
- Publication number
- JPS6075546A JPS6075546A JP18015383A JP18015383A JPS6075546A JP S6075546 A JPS6075546 A JP S6075546A JP 18015383 A JP18015383 A JP 18015383A JP 18015383 A JP18015383 A JP 18015383A JP S6075546 A JPS6075546 A JP S6075546A
- Authority
- JP
- Japan
- Prior art keywords
- molybdenum
- molybdenum material
- long
- aluminum
- heater
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 239000000463 material Substances 0.000 title claims abstract description 44
- 229910052750 molybdenum Inorganic materials 0.000 title claims abstract description 43
- 239000011733 molybdenum Substances 0.000 title claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 17
- 239000013078 crystal Substances 0.000 claims abstract description 15
- 229910052700 potassium Inorganic materials 0.000 claims abstract description 8
- 238000001953 recrystallisation Methods 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 229910001182 Mo alloy Inorganic materials 0.000 claims abstract description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 16
- 238000007740 vapor deposition Methods 0.000 claims description 8
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 239000011591 potassium Substances 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 abstract description 6
- 238000007254 oxidation reaction Methods 0.000 abstract description 6
- 230000006866 deterioration Effects 0.000 abstract description 5
- 238000001704 evaporation Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 6
- 238000010301 surface-oxidation reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- WFISYBKOIKMYLZ-UHFFFAOYSA-N [V].[Cr] Chemical compound [V].[Cr] WFISYBKOIKMYLZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- -1 desprosium Chemical compound 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 1
- 229910001950 potassium oxide Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Resistance Heating (AREA)
- Powder Metallurgy (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18015383A JPS6075546A (ja) | 1983-09-30 | 1983-09-30 | 高温強度に優れたモリブデン材 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18015383A JPS6075546A (ja) | 1983-09-30 | 1983-09-30 | 高温強度に優れたモリブデン材 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6075546A true JPS6075546A (ja) | 1985-04-27 |
| JPS6367540B2 JPS6367540B2 (enrdf_load_stackoverflow) | 1988-12-26 |
Family
ID=16078320
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18015383A Granted JPS6075546A (ja) | 1983-09-30 | 1983-09-30 | 高温強度に優れたモリブデン材 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6075546A (enrdf_load_stackoverflow) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6276525A (ja) * | 1985-09-30 | 1987-04-08 | Toshiba Corp | モリブデン板とその製造方法 |
| JPS63114935A (ja) * | 1986-10-31 | 1988-05-19 | Tokyo Tungsten Co Ltd | モリブデンるつぼ及びその製造方法 |
| JP2010203151A (ja) * | 2009-03-03 | 2010-09-16 | First Cabin Inc | 組立個室 |
| JP2019009021A (ja) * | 2017-06-26 | 2019-01-17 | 日本特殊陶業株式会社 | セラミックス部材及びその製造方法 |
| JP2023035957A (ja) * | 2021-08-30 | 2023-03-13 | ミコ セラミックス リミテッド | 温度偏差特性が改善された基板加熱装置 |
| CN116875838A (zh) * | 2023-09-08 | 2023-10-13 | 西安格美金属材料有限公司 | 一种掺钾的钼合金板材制备方法 |
-
1983
- 1983-09-30 JP JP18015383A patent/JPS6075546A/ja active Granted
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6276525A (ja) * | 1985-09-30 | 1987-04-08 | Toshiba Corp | モリブデン板とその製造方法 |
| JPS63114935A (ja) * | 1986-10-31 | 1988-05-19 | Tokyo Tungsten Co Ltd | モリブデンるつぼ及びその製造方法 |
| JP2010203151A (ja) * | 2009-03-03 | 2010-09-16 | First Cabin Inc | 組立個室 |
| JP2019009021A (ja) * | 2017-06-26 | 2019-01-17 | 日本特殊陶業株式会社 | セラミックス部材及びその製造方法 |
| JP2023035957A (ja) * | 2021-08-30 | 2023-03-13 | ミコ セラミックス リミテッド | 温度偏差特性が改善された基板加熱装置 |
| CN116875838A (zh) * | 2023-09-08 | 2023-10-13 | 西安格美金属材料有限公司 | 一种掺钾的钼合金板材制备方法 |
| CN116875838B (zh) * | 2023-09-08 | 2023-11-21 | 西安格美金属材料有限公司 | 一种掺钾的钼合金板材制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6367540B2 (enrdf_load_stackoverflow) | 1988-12-26 |
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