JPS6072222A - 半導体薄膜成長装置 - Google Patents
半導体薄膜成長装置Info
- Publication number
- JPS6072222A JPS6072222A JP17988483A JP17988483A JPS6072222A JP S6072222 A JPS6072222 A JP S6072222A JP 17988483 A JP17988483 A JP 17988483A JP 17988483 A JP17988483 A JP 17988483A JP S6072222 A JPS6072222 A JP S6072222A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- reaction tube
- pedestal
- spacer
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 239000010409 thin film Substances 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims abstract description 11
- 125000006850 spacer group Chemical group 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 31
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 26
- 150000001875 compounds Chemical class 0.000 claims abstract description 24
- 238000005192 partition Methods 0.000 claims abstract description 16
- 238000006243 chemical reaction Methods 0.000 claims description 51
- 230000001105 regulatory effect Effects 0.000 claims description 26
- 239000002994 raw material Substances 0.000 claims description 23
- 230000000630 rising effect Effects 0.000 claims description 14
- 239000002699 waste material Substances 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 3
- 239000000835 fiber Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 claims description 3
- 150000002902 organometallic compounds Chemical class 0.000 claims description 3
- 239000003708 ampul Substances 0.000 claims description 2
- 238000000197 pyrolysis Methods 0.000 claims 1
- 238000002156 mixing Methods 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 104
- 230000000694 effects Effects 0.000 description 8
- 238000005979 thermal decomposition reaction Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 2
- 229910000070 arsenic hydride Inorganic materials 0.000 description 2
- 230000001174 ascending effect Effects 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- -1 hydride residue Chemical group 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17988483A JPS6072222A (ja) | 1983-09-28 | 1983-09-28 | 半導体薄膜成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17988483A JPS6072222A (ja) | 1983-09-28 | 1983-09-28 | 半導体薄膜成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6072222A true JPS6072222A (ja) | 1985-04-24 |
| JPH0136980B2 JPH0136980B2 (enExample) | 1989-08-03 |
Family
ID=16073580
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17988483A Granted JPS6072222A (ja) | 1983-09-28 | 1983-09-28 | 半導体薄膜成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6072222A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5430891A (en) * | 1992-08-18 | 1995-07-04 | U.S. Philips Corporation | Tuning detection circuit for a high-frequency receiver, and receiver including such detection circuit |
| JP2008248998A (ja) * | 2007-03-29 | 2008-10-16 | Osaka Gas Co Ltd | 輸送管の包囲体および包囲体の装着方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50347A (enExample) * | 1973-05-09 | 1975-01-06 |
-
1983
- 1983-09-28 JP JP17988483A patent/JPS6072222A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50347A (enExample) * | 1973-05-09 | 1975-01-06 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5430891A (en) * | 1992-08-18 | 1995-07-04 | U.S. Philips Corporation | Tuning detection circuit for a high-frequency receiver, and receiver including such detection circuit |
| JP2008248998A (ja) * | 2007-03-29 | 2008-10-16 | Osaka Gas Co Ltd | 輸送管の包囲体および包囲体の装着方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0136980B2 (enExample) | 1989-08-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5972106A (en) | Device and method for producing single crystal | |
| CN214572367U (zh) | 一种碳化硅晶体生长装置 | |
| JP4111828B2 (ja) | 特に結晶層を堆積する方法 | |
| CN113151897B (zh) | 一种坩埚结构 | |
| JP2002154899A (ja) | 炭化珪素単結晶の製造方法及び製造装置 | |
| JP3414475B2 (ja) | 結晶成長装置 | |
| JP3941727B2 (ja) | 炭化珪素単結晶の製造方法および製造装置 | |
| JPS6072222A (ja) | 半導体薄膜成長装置 | |
| JP2009001489A (ja) | 単結晶の製造装置及び製造方法 | |
| JPS6072221A (ja) | 半導体薄膜成長装置 | |
| US3954551A (en) | Method of pulling silicon ribbon through shaping guide | |
| JP2006069888A (ja) | 多結晶シリコン棒の製造方法および製造装置 | |
| JP2003306398A (ja) | 炭化珪素単結晶の製造方法および製造装置 | |
| JPS6072223A (ja) | 半導体薄膜成長装置 | |
| JPH01286306A (ja) | 結晶成長装置 | |
| JP2710433B2 (ja) | 単結晶引上装置 | |
| CN220977219U (zh) | 一种液相法生长碳化硅晶体的装置 | |
| JPS6092608A (ja) | 半導体薄膜成長装置 | |
| JPH05105596A (ja) | 炭化ケイ素単結晶成長方法 | |
| JPH07193003A (ja) | 気相成長装置および気相成長方法 | |
| JPH039609B2 (enExample) | ||
| JPH04219386A (ja) | シリコン単結晶の製造装置 | |
| JPH11228289A (ja) | 結晶成長炉 | |
| JP4155085B2 (ja) | 化合物半導体単結晶の製造方法 | |
| JPS59112615A (ja) | 気相反応装置 |