JPH0136980B2 - - Google Patents

Info

Publication number
JPH0136980B2
JPH0136980B2 JP58179884A JP17988483A JPH0136980B2 JP H0136980 B2 JPH0136980 B2 JP H0136980B2 JP 58179884 A JP58179884 A JP 58179884A JP 17988483 A JP17988483 A JP 17988483A JP H0136980 B2 JPH0136980 B2 JP H0136980B2
Authority
JP
Japan
Prior art keywords
gas
reaction tube
raw material
spacer
pedestal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58179884A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6072222A (ja
Inventor
Yasuhiro Ishii
Yoshimoto Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP17988483A priority Critical patent/JPS6072222A/ja
Publication of JPS6072222A publication Critical patent/JPS6072222A/ja
Publication of JPH0136980B2 publication Critical patent/JPH0136980B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
JP17988483A 1983-09-28 1983-09-28 半導体薄膜成長装置 Granted JPS6072222A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17988483A JPS6072222A (ja) 1983-09-28 1983-09-28 半導体薄膜成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17988483A JPS6072222A (ja) 1983-09-28 1983-09-28 半導体薄膜成長装置

Publications (2)

Publication Number Publication Date
JPS6072222A JPS6072222A (ja) 1985-04-24
JPH0136980B2 true JPH0136980B2 (enExample) 1989-08-03

Family

ID=16073580

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17988483A Granted JPS6072222A (ja) 1983-09-28 1983-09-28 半導体薄膜成長装置

Country Status (1)

Country Link
JP (1) JPS6072222A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06188763A (ja) * 1992-08-18 1994-07-08 Philips Electron Nv 検出器およびこの検出器を用いた高周波信号用受信機
JP4814824B2 (ja) * 2007-03-29 2011-11-16 大阪瓦斯株式会社 輸送管の包囲体および包囲体の装着方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50347A (enExample) * 1973-05-09 1975-01-06

Also Published As

Publication number Publication date
JPS6072222A (ja) 1985-04-24

Similar Documents

Publication Publication Date Title
TWI276698B (en) Chemical vapor deposition reactor
WO2009123117A1 (ja) 有機金属化合物供給装置
JP4111828B2 (ja) 特に結晶層を堆積する方法
JPH07235501A (ja) 結晶成長装置
JP3941727B2 (ja) 炭化珪素単結晶の製造方法および製造装置
JPH01125923A (ja) 気相成長装置
JPH0136980B2 (enExample)
US3954551A (en) Method of pulling silicon ribbon through shaping guide
JPH1112085A (ja) 化学気相成長装置
CN111041554B (zh) 一种用于晶硅铸锭炉的载气导流装置及其导流方法
JP2976972B1 (ja) ガス整流器
JP2006069888A (ja) 多結晶シリコン棒の製造方法および製造装置
JPS6072221A (ja) 半導体薄膜成長装置
JPS60112694A (ja) 化合物半導体の気相成長方法
CN117926415A (zh) 气体引入稳定晶体生长台阶流的长晶方法
JPS6220160B2 (enExample)
JP4510151B2 (ja) 目的物をエピタキシャル成長させるための装置およびそのような成長をさせるための方法
CN103789823B (zh) 一种氮化物半导体材料气相外延用反应器设计及方法
JPS6072223A (ja) 半導体薄膜成長装置
JPS6092608A (ja) 半導体薄膜成長装置
JPS59207622A (ja) 半導体薄膜気相成長装置
JPS6114195A (ja) 有機金属熱分解縦型気相成長装置
JP3867616B2 (ja) 半導体製造装置および方法
JPS61177713A (ja) 炭化珪素化合物半導体の気相エピタキシヤル成長装置
JPH0255292A (ja) 反応管の冷却方法