JPS6072218A - 薄膜形成方法 - Google Patents

薄膜形成方法

Info

Publication number
JPS6072218A
JPS6072218A JP17808483A JP17808483A JPS6072218A JP S6072218 A JPS6072218 A JP S6072218A JP 17808483 A JP17808483 A JP 17808483A JP 17808483 A JP17808483 A JP 17808483A JP S6072218 A JPS6072218 A JP S6072218A
Authority
JP
Japan
Prior art keywords
thin film
substrate
reactive gas
cluster
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17808483A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0456446B2 (enExample
Inventor
Hitoshi Hasegawa
長谷川　斉
Tomihiro Yonenaga
富広 米永
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17808483A priority Critical patent/JPS6072218A/ja
Publication of JPS6072218A publication Critical patent/JPS6072218A/ja
Publication of JPH0456446B2 publication Critical patent/JPH0456446B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP17808483A 1983-09-28 1983-09-28 薄膜形成方法 Granted JPS6072218A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17808483A JPS6072218A (ja) 1983-09-28 1983-09-28 薄膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17808483A JPS6072218A (ja) 1983-09-28 1983-09-28 薄膜形成方法

Publications (2)

Publication Number Publication Date
JPS6072218A true JPS6072218A (ja) 1985-04-24
JPH0456446B2 JPH0456446B2 (enExample) 1992-09-08

Family

ID=16042344

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17808483A Granted JPS6072218A (ja) 1983-09-28 1983-09-28 薄膜形成方法

Country Status (1)

Country Link
JP (1) JPS6072218A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62118518A (ja) * 1985-11-19 1987-05-29 Ulvac Corp 化合物半導体の形成方法
US6272535B1 (en) 1996-01-31 2001-08-07 Canon Kabushiki Kaisha System for enabling access to a body of information based on a credit value, and system for allocating fees

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4898775A (enExample) * 1972-03-28 1973-12-14
JPS5462776A (en) * 1977-10-27 1979-05-21 Nec Corp Production of compound semiconductor thin films
JPS554719A (en) * 1978-06-22 1980-01-14 Nec Corp Pulse current driving unit for bubble
JPS5625772A (en) * 1979-08-09 1981-03-12 Mieko Kiyozawa Toy for training wearing of cloth for infant

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4898775A (enExample) * 1972-03-28 1973-12-14
JPS5462776A (en) * 1977-10-27 1979-05-21 Nec Corp Production of compound semiconductor thin films
JPS554719A (en) * 1978-06-22 1980-01-14 Nec Corp Pulse current driving unit for bubble
JPS5625772A (en) * 1979-08-09 1981-03-12 Mieko Kiyozawa Toy for training wearing of cloth for infant

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62118518A (ja) * 1985-11-19 1987-05-29 Ulvac Corp 化合物半導体の形成方法
US6272535B1 (en) 1996-01-31 2001-08-07 Canon Kabushiki Kaisha System for enabling access to a body of information based on a credit value, and system for allocating fees

Also Published As

Publication number Publication date
JPH0456446B2 (enExample) 1992-09-08

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