JPS607132A - ドライエツチング装置 - Google Patents
ドライエツチング装置Info
- Publication number
- JPS607132A JPS607132A JP11456583A JP11456583A JPS607132A JP S607132 A JPS607132 A JP S607132A JP 11456583 A JP11456583 A JP 11456583A JP 11456583 A JP11456583 A JP 11456583A JP S607132 A JPS607132 A JP S607132A
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- sample
- etching
- dry etching
- magnetic field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001312 dry etching Methods 0.000 title claims description 15
- 238000005530 etching Methods 0.000 claims abstract description 45
- 230000007246 mechanism Effects 0.000 claims description 23
- 238000000034 method Methods 0.000 abstract description 6
- 239000012212 insulator Substances 0.000 abstract description 4
- 230000000694 effects Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11456583A JPS607132A (ja) | 1983-06-25 | 1983-06-25 | ドライエツチング装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11456583A JPS607132A (ja) | 1983-06-25 | 1983-06-25 | ドライエツチング装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS607132A true JPS607132A (ja) | 1985-01-14 |
| JPH0473288B2 JPH0473288B2 (enrdf_load_stackoverflow) | 1992-11-20 |
Family
ID=14640994
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11456583A Granted JPS607132A (ja) | 1983-06-25 | 1983-06-25 | ドライエツチング装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS607132A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01137633A (ja) * | 1987-11-25 | 1989-05-30 | Hitachi Ltd | 有磁場エッチング装置 |
| JPH01200629A (ja) * | 1988-02-04 | 1989-08-11 | Nec Corp | ドライエッチング装置 |
| US5397421A (en) * | 1992-10-20 | 1995-03-14 | Sony Corporation | Powder beam etching machine |
| EP1120811A3 (en) * | 2000-01-24 | 2003-05-14 | Han, Jeon-geon | Planar-type magnetron sputtering apparatus |
| CN106298420A (zh) * | 2015-05-22 | 2017-01-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 下电极以及半导体加工设备 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57159026A (en) * | 1981-03-27 | 1982-10-01 | Toshiba Corp | Dry etching method |
| JPS57185982A (en) * | 1981-05-06 | 1982-11-16 | Perkin Elmer Corp | Plasma etching device |
-
1983
- 1983-06-25 JP JP11456583A patent/JPS607132A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57159026A (en) * | 1981-03-27 | 1982-10-01 | Toshiba Corp | Dry etching method |
| JPS57185982A (en) * | 1981-05-06 | 1982-11-16 | Perkin Elmer Corp | Plasma etching device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01137633A (ja) * | 1987-11-25 | 1989-05-30 | Hitachi Ltd | 有磁場エッチング装置 |
| JPH01200629A (ja) * | 1988-02-04 | 1989-08-11 | Nec Corp | ドライエッチング装置 |
| US5397421A (en) * | 1992-10-20 | 1995-03-14 | Sony Corporation | Powder beam etching machine |
| EP1120811A3 (en) * | 2000-01-24 | 2003-05-14 | Han, Jeon-geon | Planar-type magnetron sputtering apparatus |
| CN106298420A (zh) * | 2015-05-22 | 2017-01-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 下电极以及半导体加工设备 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0473288B2 (enrdf_load_stackoverflow) | 1992-11-20 |
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